J. M. Ripalda

Behavior of oxygen doped SiC thin films: An x-ray photoelectron spectroscopy study

Thin silicon carbide films have been deposited by chemical vapor deposition on p-type (100) silicon substrates. The composition and bonds formed in these films have been analyzed by x-ray photoelectron spectroscopy (XPS) and infrared spectroscopy. The native surface oxide on the silicon carbide surface induced by air exposure has also been studied. Several phases are detected in the near-surface region: elemental Si, Si oxides (mainly SiO2), Si carbide (SiC) and Si oxicarbides (SiOxCy). Quantitative XPS analysis results indicate that, for atomic oxygen fractions <0.15, the Si–C phases are dominant in the films. Above this value no silicon oxicarbide is observed, but a multiphase material formed by elemental Si, Si oxides and Si carbides is observed. In spite of the film being a complex phase mixture, a simple relationship is found between the overall carbon and oxygen compositions. The carbon atomic fraction in the film decreases quasilinearly as the oxygen content increases, with a slope of about −1. An ...

Room temperature emission at 1.6μm from InGaAs quantum dots capped with GaAsSb

Room temperature photoluminescence at 1.6μm is demonstrated from InGaAs quantum dots capped with an 8nm GaAsSb quantum well. Results obtained from various sample structures are compared, including samples capped with GaAs. The observed redshift in GaAsSb capped samples is attributed to a type II band alignment and to a beneficial modification of growth kinetics during capping due to the presence of Sb. The sample structure is discussed on the basis of transmission electron microscopy results.

Optical investigation of type II GaSb∕GaAs self-assembled quantum dots

We have studied the emission and absorption properties of type II GaSb∕GaAs quantum dots embedded in a p-i-n photodiode. The excitation power evolution provides clear signatures of the spatially separated confinement of electrons and holes in these nanostructures. We have estimated the confinement potential for the holes to be ∼500meV, leading to an intense room temperature emission assisted by recapture processes from the wetting layer. Photocurrent measurements show strong absorption in the wetting layer and in the quantum dots at room temperature which are important for photodetection applications based in this system.

Carrier recombination effects in strain compensated quantum dot stacks embedded in solar cells

In this work we report the stacking of 50 InAs/GaAs quantum dot layers with a GaAs spacer thickness of 18 nm using GaP monolayers for strain compensation. We find a good structural and optical quality of the fabricated samples including a planar growth front across the whole structure, a reduction in the quantum dot size inhomogeneity, and an enhanced thermal stability of the emission. The optimized quantum dot stack has been embedded in a solar cell structure and we discuss the benefits and disadvantages of this approach for high efficiency photovoltaic applications.

Enhancement of the room temperature luminescence of InAs quantum dots by GaSb capping

The authors have studied the use of antimony for the optimization of the InAs∕GaAs(001) self-assembled quantum dot (QD) luminescence characteristics in the 1.3μm spectral region. The best results have been obtained by capping InAs QDs with 2 ML of GaSb grown on top of a 3 ML GaAs barrier separating the InAs and the GaSb layers. This results in an order of magnitude enhancement of the room temperature luminescence intensity at 1.3μm emission wavelength.

X-ray photoelectron spectroscopy study of low-temperature molybdenum oxidation process

The low-temperature oxidation during deposition by evaporation of molybdenum thin films has been investigated. Analysis by x-ray photoelectron spectroscopy and x-ray diffraction reveals that small differences in the substrate temperature during deposition may give rise to important changes in the final composition and structure of the molybdenum oxide. Changes in binding energy and line shape of the Mo 3d5/2−Mo 3d3/2 doublet attributed to oxygen incorporation have been studied. Two principal steps can be distinguished, with a transition temperature of ∼310 °C. Up to substrate temperatures of ∼310 °C, the superficial Mo remains almost unaffected, with some oxygen dissolved. At ∼310 °C, mixing of Mo0 metal and molybdenum oxide (Moδ+0<δ<4) clusters or islands is observed. Finally, above this temperature a surface layer of molybdenum oxide, Mo6+, is formed. In addition, an abrupt change in d100 interplanar parameter of Mo is observed.

Incorporation of Sb in InAs∕GaAs quantum dots

The formation of a quaternary InGaAsSb alloy is shown to occur in the core of epitaxial GaSb capped InAs∕GaAs quantum dots emitting at 1.3μm. The existence of the four constituent elements is demonstrated by using spatially resolved low-loss electron energy loss spectroscopy and aberration-corrected high angle annular dark field scanning transmission electron microscopy. The intermixing process giving rise to the formation of this quaternary alloy takes place despite the large miscibility gap between InAs and GaSb binary compounds, and is probably driven by the existence of strain in the quantum dots.

Three dimensional atom probe imaging of GaAsSb quantum rings

Unambiguous evidence of ring-shaped self-assembled GaSb nanostructures grown by molecular beam epitaxy is presented on the basis of atom-probe tomography reconstructions and dark field transmission electron microscopy imaging. The GaAs capping process causes a strong segregation of Sb out of the center of GaSb quantum dots, leading to the self-assembled GaAs(x)Sb(1-x) quantum rings of 20-30 nm in diameter with x ∼ 0.33.

InAs/AlGaAs quantum dot intermediate band solar cells with enlarged sub-bandgaps

In the last decade several prototypes of intermediate band solar cells (IBSCs) have been manufactured. So far, most of these prototypes have been based on InAs/GaAs quantum dots (QDs) in order to implement the IB material. The key operation principles of the IB theory are two photon sub-bandgap (SBG) photocurrent, and output voltage preservation, and both have been experimentally demonstrated at low temperature. At room temperature (RT), however, thermal escape/relaxation between the conduction band (CB) and the IB prevents voltage preservation. To improve this situation, we have produced and characterized the first reported InAs/AlGaAs QD-based IBSCs. For an Al content of 25% in the host material, we have measured an activation energy of 361 meV for the thermal carrier escape. This energy is about 250 meV higher than the energies found in the literature for InAs/GaAs QD, and almost 140 meV higher than the activation energy obtained in our previous InAs/GaAs QD-IBSC prototypes including a specifically designed QD capping layer. This high value is responsible for the suppression of the SBG quantum efficiency under monochromatic illumination at around 220 K. We suggest that, if the energy split between the CB and the IB is large enough, activation energies as high as to suppress thermal carrier escape at room temperature (RT) can be achieved. In this respect, the InAs/AlGaAs system offers new possibilities to overcome some of the problems encountered in InAs/GaAs and opens the path for QD-IBSC devices capable of achieving high efficiency at RT.

New cryogenic environment for beamline ID22 at the European Synchrotron Radiation Facility

A compact minicryostat has been well adapted on the hard x-ray microprobe ID22 of the European Synchrotron Radiation Facility. For variable low-temperature investigations, its special technical design provides precise scanning microscopy and allows easy access for multiple detection modes. Based on x-ray excited optical luminescence technique on the micrometer scale, details of the equipment, its temperature calibration, and typical results are described. Data collections from InAs quantum heterostructures support the excellent thermal performance of the novel cryogenic device.