J. P. Griffiths

Time-of-Flight Measurements of Single-Electron Wave Packets in Quantum Hall Edge States.

We report time-of-flight measurements on electrons traveling in quantum Hall edge states. Hot-electron wave packets are emitted one per cycle into edge states formed along a depleted sample boundary. The electron arrival time is detected by driving a detector barrier with a square wave that acts as a shutter. By adding an extra path using a deflection barrier, we measure a delay in the arrival time, from which the edge-state velocity v is deduced. We find that v follows 1/B dependence, in good agreement with the E[over →]×B[over →] drift. The edge potential is estimated from the energy dependence of v using a harmonic approximation.

Ultrafast voltage sampling using single-electron wavepackets

We demonstrate an ultrafast voltage sampling technique using a stream of electron wavepackets. Electrons are emitted from a single-electron pump and travel through electron waveguides towards a detector potential barrier. Our electrons sample an instantaneous voltage on the gate upon arrival at the detector barrier. Fast sampling is achieved by minimising the duration that the electrons interact with the barrier, which can be made as small as a few picoseconds. The value of the instantaneous voltage can be determined by varying the gate voltage to match the barrier height to the electron energy, which is used as a stable reference. The test waveform can be reconstructed by shifting the electron arrival time against it. Although we find that the our current system is limited by the experimental line bandwidth to 12–18 GHz, we argue that this method has scope to increase the bandwidth of voltage sampling to 100 GHz and beyond.

Towards a quantum representation of the ampere using single electron pumps

Electron pumps generate a macroscopic electric current by controlled manipulation of single electrons. Despite intensive research towards a quantum current standard over the last 25 years, making a fast and accurate quantized electron pump has proved extremely difficult. Here we demonstrate that the accuracy of a semiconductor quantum dot pump can be dramatically improved by using specially designed gate drive waveforms. Our pump can generate a current of up to 150 pA, corresponding to almost a billion electrons per second, with an experimentally demonstrated current accuracy better than 1.2 parts per million (p.p.m.) and strong evidence, based on fitting data to a model, that the true accuracy is approaching 0.01 p.p.m. This type of pump is a promising candidate for further development as a realization of the SI base unit ampere, following a redefinition of the ampere in terms of a fixed value of the elementary charge.

All-electric all-semiconductor spin field-effect transistors

The spin field-effect transistor envisioned by Datta and Das opens a gateway to spin information processing. Although the coherent manipulation of electron spins in semiconductors is now possible, the realization of a functional spin field-effect transistor for information processing has yet to be achieved, owing to several fundamental challenges such as the low spin-injection efficiency due to resistance mismatch, spin relaxation and the spread of spin precession angles. Alternative spin transistor designs have therefore been proposed, but these differ from the field-effect transistor concept and require the use of optical or magnetic elements, which pose difficulties for incorporation into integrated circuits. Here, we present an all-electric and all-semiconductor spin field-effect transistor in which these obstacles are overcome by using two quantum point contacts as spin injectors and detectors. Distinct engineering architectures of spin-orbit coupling are exploited for the quantum point contacts and the central semiconductor channel to achieve complete control of the electron spins (spin injection, manipulation and detection) in a purely electrical manner. Such a device is compatible with large-scale integration and holds promise for future spintronic devices for information processing.

Clock-controlled emission of single-electron wave packets in a solid-state circuit.

We demonstrate the energy- and time-resolved detection of single-electron wave packets from a clock-controlled source transmitted through a high-energy quantum Hall edge channel. A quantum dot source is loaded with single electrons which are then emitted ~150 meV above the Fermi energy. The energy spectroscopy of emitted electrons indicates that at high magnetic field these electrons can be transported over several microns without inelastic electron-electron or electron-phonon scattering. Using a time-resolved spectroscopic technique, we deduce the wave packet size at picosecond resolution. We also show how this technique can be used to switch individual electrons into different electron waveguides (edge channels).

Cryogenic on-chip multiplexer for the study of quantum transport in 256 split-gate devices

We present a multiplexing scheme for the measurement of large numbers of mesoscopic devices in cryogenic systems. The multiplexer is used to contact an array of 256 split gates on a GaAs/AlGaAs heterostructure, in which each split gate can be measured individually. The low-temperature conductance of split-gate devices is governed by quantum mechanics, leading to the appearance of conductance plateaux at intervals of 2e2/h. A fabrication-limited yield of 94% is achieved for the array, and a “quantum yield” is also defined, to account for disorder affecting the quantum behaviour of the devices. The quantum yield rose from 55% to 86% after illuminating the sample, explained by the corresponding increase in carrier density and mobility of the two-dimensional electron gas. The multiplexer is a scalable architecture, and can be extended to other forms of mesoscopic devices. It overcomes previous limits on the number of devices that can be fabricated on a single chip due to the number of electrical contacts avai...

Multiplexed charge-locking device for large arrays of quantum devices

We present a method of forming and controlling large arrays of gate-defined quantum devices. The method uses an on-chip, multiplexed charge-locking system and helps to overcome the restraints imposed by the number of wires available in cryostat measurement systems. The device architecture that we describe here utilises a multiplexer-type scheme to lock charge onto gate electrodes. The design allows access to and control of gates whose total number exceeds that of the available electrical contacts and enables the formation, modulation and measurement of large arrays of quantum devices. We fabricate such devices on n-type GaAs/AlGaAs substrates and investigate the stability of the charge locked on to the gates. Proof-of-concept is shown by measurement of the Coulomb blockade peaks of a single quantum dot formed by a floating gate in the device. The floating gate is seen to drift by approximately one Coulomb oscillation per hour.

Measurement and control of electron wave packets from a single-electron source

We report an experimental technique to measure and manipulate the arrival-time and energy distributions of electrons emitted from a semiconductor electron pump, operated as both a single-electron source and a two-electron source. Using an energy-selective detector whose transmission we control on picosecond time scales, we can measure directly the electron arrival-time distribution and we determine the upper bound to the distribution width to be 30 ps. We study the effects of modifying the shape of the voltage wave form that drives the electron pump, and show that our results can be explained by a tunneling model of the emission mechanism. This information was in turn used to control the emission-time difference and energy gap between a pair of electrons.

Direct imaging of coherent quantum transport in graphene p−n−p junctions

We fabricate a graphene p-n-p heterojunction and exploit the coherence of weakly-confined Dirac quasiparticles to resolve the underlying scattering potential using low temperature scanning gate microscopy. The tip-induced perturbation to the heterojunction modifies the condition for resonant scattering, enabling us to detect localized Fabry-Perot cavities from the focal point of halos in scanning gate images. In addition to halos over the bulk we also observe ones spatially registered to the physical edge of the graphene. Guided by quantum transport simulations we attribute these to modified resonant scattering at the edges within elongated cavities that form due to focusing of the electrostatic field.

A non-invasive electron thermometer based on charge sensing of a quantum dot

We present a thermometry scheme to extract the temperature of a two-dimensional electron gas by monitoring the charge occupation of a weakly tunnel-coupled “thermometer” quantum dot using a quantum point contact detector. Electronic temperatures between 120 and 951 mK are measured with an accuracy of better than 1 mK in the best case, and agree with the lattice temperature measured by a resistance thermometer. The thermometer is non-invasive and does not pass a current through the electron system being measured. The tuning is independent of temperature, and the device is robust in a magnetic field up to 5.6 T.