J. Ratajczak

Low Schottky barrier height for ErSi2−x/n-Si contacts formed with a Ti cap

In this paper, the formation of Er disilicide (ErSi2−x) with a Ti cap on low doping n-type Si(100) is investigated. After deposition in ultrahigh vacuum, the solid-state reaction between Er and Si is performed ex situ by rapid thermal annealing between 450 and 600 °C in a forming gas ambience with a 10 nm thick Ti capping layer to protect Er from oxidation. X-ray diffraction analyses have confirmed the formation of ErSi2−x for all annealing temperatures. The formed films are found to be free of pinholes or pits and present a sharp and smooth interface with the Si bulk substrate. The extracted Schottky barrier height (SBH) corresponds to the state-of-the-art value of 0.28 eV if the annealing temperature is lower than or equal to 500 °C. This result demonstrates the possibility to form low SBH ErSi2−x/n-Si contacts with a protective Ti cap. However, when the annealing temperature is set to a higher value, the SBH concomitantly rises. Based on our experiments, this SBH increase can be mainly related to an enhanced diffusion of oxygen through the stack during the annealing, which degrades the quality of the ErSi2−x film.

Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing

The evolution of the Schottky barrier height (SBH) of Er silicide contacts to n-Si is investigated as a function of the annealing temperature. The SBH is found to drop substantially from 0.43 eV for the as-deposited sample to reach 0.28 eV, its lowest value, at 450 degrees C. By x-ray diffraction, high resolution transmission electron microscopy, and x-ray photoelectron spectroscopy, the decrease in the SBH is shown to be associated with the progressive formation of crystalline ErSi2-x.

Occurrence of tin pest on the surface of tin‐rich lead‐free alloys

Purpose – The purpose of this paper is to investigate tin pest formation in lead‐free alloys.Design/methodology/approach – Samples of Sn99.5Ag3.0Cu0.5, Sn99Cu1 and Sn98Cu2 alloys were prepared in four different forms. The first group was prepared using traditional PCB technology and a hand soldering method. The next group of samples was composed of as‐received ingots of these alloys. To check the impact of mechanical treatment on the transformation process, additional cold‐worked and cold‐rolled samples were prepared (30 kN). All samples were placed initially either at −18°C or at −65°C for low temperature storage testing. Visual observations, scanning electron microscopy observations and X‐ray diffraction analysis were performed to identify the transformation process. Additional samples were prepared using a force of 75 kN and placed in a chamber at a temperature of −30°C for long‐term testing.Findings – The detectable symptoms of tin pest in samples subjected to mechanical processing with 1 and 2 wt.% o...

Elimination of scanning electron microscopy image periodic distortions with digital signal‐processing methods

Electromagnetic interference is one of the main distortion sources in scanning electron microscopy. Electromagnetic interference‐generated scanning electron microscopy image distortions are usually visible as edge blur (at low scan rates) or vibration (at high scan rates). Hardware solutions to this problem, e.g. electrostatic and magnetic shielding, are expensive and, in some cases, difficult to implement. The current investigations led to a significant decrease in the periodic distortions by a novel adaptation of software‐based digital signal processing to scanning electron microscopy problems, without any hardware modification.

Selective etching of Pt with respect to PtSi using a sacrificial low temperature germanidation process

A soft and scalable etching procedure that selectively eliminates Pt without altering PtSi is proposed. The selective etch is based on the low temperature transformation of the excess Pt into a more reactive PtxGey phase that is easily etched in a sulfuric peroxide mixture. The mechanism of PtxGey alloying is detailed based on x-ray diffraction analysis. The innocuousness of the germanidation-based selective etch on the integrity of the PtSi∕Si junction is consolidated by Schottky barrier measurements. This process is expected to facilitate the integration and the scalability of PtSi on ultrathin silicon layers.

Impact of resistance on cathodoluminescence and its application for layer sheet-resistance measurements

The dependence of cathodoluminescence (CL) on resistances in semiconductor structures, especially on layer resistances, is described. The effect can be taken advantage of and used for characterization of sheet resistance of thin layers in semiconductor devices, as illustrated in this paper by an assessment of lateral confinements in semiconductor-laser heterostructures. At the same time, the effect, if neglected, can be detrimental for accuracy of spatially or spectrally resolved CL studies.

Resistance and sheet resistance measurements using electron beam induced current

A method for measurement of spatially uniform or nonuniform resistance in layers and strips, based on electron beam induced current (EBIC) technique, is described. High electron beam currents are used so that the overall resistance of the measurement circuit affects the EBIC signal. During the evaluation, the electron beam is scanned along the measured object, whose load resistance varies with the distance. The variation is compensated by an adjustable resistance within an external circuit. The method has been experimentally deployed for sheet resistance determination of buried regions of lateral confinements in semiconductor laser heterostructures manufactured by molecular beam epitaxy.A method for measurement of spatially uniform or nonuniform resistance in layers and strips, based on electron beam induced current (EBIC) technique, is described. High electron beam currents are used so that the overall resistance of the measurement circuit affects the EBIC signal. During the evaluation, the electron beam is scanned along the measured object, whose load resistance varies with the distance. The variation is compensated by an adjustable resistance within an external circuit. The method has been experimentally deployed for sheet resistance determination of buried regions of lateral confinements in semiconductor laser heterostructures manufactured by molecular beam epitaxy.

A converging route towards very high frequency, mechanically flexible, and performance stable integrated electronics

The ability to realize flexible circuits integrating sensing, signal processing, and communicating capabilities is of central importance for the development of numerous nomadic applications requiring foldable, stretchable, and large area electronics. A key challenge is, however, to combine high electrical performance (i.e., millimeter wave, low noise electronics) with mechanical flexibility required for chip form adaptivity in addition to highly stable electrical performance upon deformation. Here, we describe a solution based on ultimate thinning and transfer onto a plastic foil of high frequency CMOS devices initially processed on conventional silicon-on-insulator wafers. We demonstrate a methodology relying on neutral plane engineering to provide high performance stability upon bending, by locating the active layer, i.e., the transistor channel, at the neutral fiber of the flexible system. Following this strategy, record frequency performance of flexible n-MOSFETs, featuring fT/fMAX of 120/145 GHz, is ...

An electrical evaluation method for the silicidation of silicon nanowires

Physical and electrical properties of PtSi nanowires (NWs) fabricated on a silicon-on-insulator wafer are investigated. The Si consumption rule in NW silicidation is consistent with that of planar process. The cross-sectional area ratio between PtSi NW and Si NW is about 1.5:1. An electrical method is used to evaluate the silicidation degree of NWs. According to the dependence of the current passing through the NW on the backside substrate voltage, we can determine whether the Si NW is fully or partially silicided. The electrical evaluation results are in agreement with transmission electron microscopy inspections.

Fabrication of Electrochemical Nanoelectrode for Sensor Application Using Focused Ion Beam Technology

Abstract The capabilities and applications of the focused ion beam (FIB) technology for detection of an electrochemical signal in nanoscale area are shown. The FIB system, enabling continuous micro- and nanofabrication within only one equipment unit, was used to produce a prototype of electrochemical nanometer-sized electrode for sensor application. Voltammetric study of electrochemically active compound (ferrocenemethanol) revealed the diffusion limiting current (12 pA), corresponding to a disc (planar) nanoelectrode with about 70 nm diameter of contact area. This size is in a good accordance with the designed contact-area (50 nm × 100 nm for width × thickness) of the FIB-produced nanoelectrode. It confirms that produced nanoelectrode is working properly in liquid solution and may enable correct measurements in nanometer-sized regions.