J. Waldie

Measurement and control of electron wave packets from a single-electron source

We report an experimental technique to measure and manipulate the arrival-time and energy distributions of electrons emitted from a semiconductor electron pump, operated as both a single-electron source and a two-electron source. Using an energy-selective detector whose transmission we control on picosecond time scales, we can measure directly the electron arrival-time distribution and we determine the upper bound to the distribution width to be 30 ps. We study the effects of modifying the shape of the voltage wave form that drives the electron pump, and show that our results can be explained by a tunneling model of the emission mechanism. This information was in turn used to control the emission-time difference and energy gap between a pair of electrons.

Experimental Progress towards Probing the Ground State of an Electron-Hole Bilayer by Low-Temperature Transport

Recently, it has been possible to design independently contacted electron-hole bilayers (EHBLs) with carrier densities <5×1010 cm2 in each layer and a separation of 10–20 nm in a GaAs/AlGaAs system. In these EHBLs, the interlayer interaction can be stronger than the intralayer interactions. Theoretical works have indicated the possibility of a very rich phase diagram in EHBLs consisting of excitonic superfluid phases, charge density waves, and Wigner crystals. Experiments have revealed that the Coulomb drag on the hole layer shows strong nonmonotonic deviations from a ∼𝑇2 behaviour expected for Fermi-liquids at low temperatures. Simultaneously, an unexpected insulating behaviour in the single-layer resistances (at a highly “metallic” regime with 𝑘𝐹𝑙>500) also appears in both layers despite electron mobilities of above ∼106cm2V−1s−1 and hole mobilities over ∼105cm2V−1s−1. Experimental data also indicates that the point of equal densities (𝑛=𝑝) is not special.

Switching between attractive and repulsive Coulomb-interaction-mediated drag in an ambipolar GaAs/AlGaAs bilayer device

We present measurements of Coulomb drag in an ambipolar GaAs/AlGaAs double quantum well structure that can be configured as both an electron-hole bilayer and a hole-hole bilayer, with an insulating barrier of only 10 nm between the two quantum wells. Coulomb drag resistivity is a direct measure of the strength of interlayer particle-particle interactions. We explore the strongly interacting regime of low carrier densities (2D interaction parameter rs up to 14). Our ambipolar device design allows a comparison between the effects of the attractive electron-hole and repulsive hole-hole interactions and also shows the effects of the different effective masses of electrons and holes in GaAs.

A complete laboratory for transport studies of electron-hole interactions in GaAs/AlGaAs ambipolar bilayers

We present GaAs/AlGaAs double quantum well devices that can operate as both electron-hole (e-h) and hole-hole (h-h) bilayers, with separating barriers as narrow as 5 nm or 7.5 nm. With such narrow barriers, in the h-h configuration, we observe signs of magnetic-field-induced exciton condensation in the quantum Hall bilayer regime. In the same devices, we can study the zero-magnetic-field e-h and h-h bilayer states using Coulomb drag. Very strong e-h Coulomb drag resistivity (up to 10% of the single layer resistivity) is observed at liquid helium temperatures, but no definite signs of exciton condensation are seen in this case. Self-consistent calculations of the electron and hole wavefunctions show this might be because the average interlayer separation is larger in the e-h case than the h-h case.

N-type ohmic contacts to undoped GaAs/AlGaAs quantum wells using only front-sided processing: application to ambipolar FETs

We report the development of a simple and reliable, front-sided-only fabrication technique for n-type ohmic contacts to two-dimensional electron gases (2DEGs) in undoped GaAs/AlGaAs quantum wells. We have adapted the well-established recessed ohmic contacts/insulated metal gate technique for inducing a 2DEG in an undoped triangular well to also work reliably for undoped square quantum wells. Our adaptation involves a change in the procedure for etching the ohmic contact pits to optimise the etch side-wall profile and depth. As an application of our technique, we present a front-side-gated ambipolar field effect transistor (FET), where both 2D electron and hole gases can be induced in the same quantum well. We present results of low-temperature (0.3 K - 4 K) transport measurements of this device, including assessment of the n-type ohmic contact quality. On the basis of our findings, we discuss why the fabrication of these contacts is difficult and how our technique circumvents the challenges.

A complete laboratory for transport studies of electron-hole interactions in GaAs/AlGaAs systems

This work was funded by EPSRC EP/H017720/1 and EP/J003417/1 and European Union Grant INDEX 289968. A.F.C. acknowledges funding from Trinity College, Cambridge, and D.T. from St. Catherines College, Cambridge. I.F. acknowledges funding from Toshiba Research Europe Limited.

Mechanically robust cylindrical metal terahertz waveguides for cryogenic applications

As the ambition behind THz quantum cascade laser based applications continues to grow, abandoning free-space optics in favor of waveguided systems promises major improvements in targeted, easy to align, and robust radiation delivery. This is especially true in cryogenic environments, where illumination is traditionally challenging. Although the field of THz waveguides is rapidly developing, most designs have limitations in terms of mechanical stability at low temperatures, and are costly and complicated to fabricate to lengths > 1 m. In this work, we investigate readily available cylindrical metal waveguides which are suitable for effective power delivery in cryogenic environments, and explore the optimal dimensions and materials available. The materials chosen were extruded un-annealed and annealed copper, as well as stainless steel, with bore diameters of 1.75, 2.5, and 4.6 mm. Measurements were performed at three different frequencies, 2.0, 2.85 and 3.2 THz, with optimal transmission losses <3 dB/m demonstrated at 2.0 THz. Additionally, novel optical couplers are also presented and characterised, with the ability to change the beam path by 90° with a coupling loss of just 2.2 dB whilst maintaining mode quality, or thermally isolate sections of waveguide with a coupling loss as low as 0.5 dB. The work presented here builds on previous work1, and forms a comprehensive investigation of cryogenically compatible THz waveguides and optical couplers, paving the way for a new generation of systems to utilize THz QCLs for a host of low-temperature investigations.

Data set accompanying the letter "A complete laboratory for transport studies of electron-hole interactions in GaAs/AlGaAs ambipolar bilayers"

Coulomb drag and magnetotransport data from the ambipolar GaAs/AlGaAs 2D bilayer devices described in the associated publication, measured by the authors at the Cavendish Laboratory, University of Cambridge UK, in the period October 2013 to April 2016. The data were measured at low temperature (90 mK to 4 K). The experimental methods are described in the associated publication.