Jackie M. Nel

Electrical characterization of defects introduced in n-type Ge during indium implantation

The authors have employed deep level transient spectroscopy to investigate the defects introduced in n-type Ge during 160keV indium (In) ion implantation. Our results show that In implantation introduces three prominent electron traps with energy levels at EC−0.09eV, EC−0.15eV, and EC−0.30eV, respectively. The authors have found that these defects are different from the point defects introduced by electron irradiation but that they do not involve In. Annealing at 600°C removed all the defects introduced during In implantation but results in a single prominent defect with a level at EC−0.35eV.

A study of the T2 defect and the emission properties of the E3 deep level in annealed melt grown ZnO single crystals

We report on the space charge spectroscopy studies performed on thermally treated melt-grown single crystal ZnO. The samples were annealed in different ambients at 700 °C and also in oxygen ambient at different temperatures. A shallow donor with a thermal activation enthalpy of 27 meV was observed in the as-received samples by capacitance-temperature, CT scans. After annealing the samples, an increase in the shallow donor concentrations was observed. For the annealed samples, E27 could not be detected and a new shallow donor with a thermal activation enthalpy of 35 meV was detected. For samples annealed above 650 °C, an increase in acceptor concentration was observed which affected the low temperature capacitance. Deep level transient spectroscopy revealed the presence of five deep level defects, E1, E2, E3, E4, and E5 in the as-received samples. Annealing of the samples at 650 °C removes the E4 and E5 deep level defects, while E2 also anneals-out at temperatures above 800 °C. After annealing at 700 °C, t...

The origin of defects induced in ultra-pure germanium by Electron Beam Deposition

The creation of point defects in the crystal lattices of various semiconductors by subthreshold events has been reported on by a number of groups. These observations have been made in great detail using sensitive electrical techniques but there is still much that needs to be clarified. Experiments using Ge and Si were performed that demonstrate that energetic particles, the products of collisions in the electron beam, were responsible for the majority of electron-beam deposition (EBD) induced defects in a two-step energy transfer process. Lowering the number of collisions of these energetic particles with the semiconductor during metal deposition was accomplished using a combination of static shields and superior vacuum resulting in devices with defect concentrations lower than

Electrical characterization of growth-induced defects in bulk-grown ZnO

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The dependence of barrier height on temperature for Pd Schottky contacts on ZnO

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Analysis of current–voltage measurements on Au/Ni/n-GaN Schottky contacts in a wide temperature range

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Electrical characterization of He+ irradiated n-ZnO

, the measurement limit of our deep level transient spectroscopy (DLTS) system. High energy electrons and photons that samples are typically exposed to were not influenced by the shields as most of these particles originate at the metal target thus eliminating these particles as possible damage causing agents. It remains unclear how packets of energy that can sometimes be as small of 2eV travel up to a

Determination of the laterally homogeneous barrier height of palladium Schottky barrier diodes on n-Ge (1 1 1)

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Electrical characterization of defects in heavy-ion implanted n-type Ge

m into the material while still retaining enough energy, that is, in the order of 1eV, to cause changes in the crystal. The manipulation of this defect causing phenomenon may hold the key to developing defect free material for future applications.