Jacob S. Levy

Octave-spanning frequency comb generation in a silicon nitride chip

We demonstrate a frequency comb spanning an octave via the parametric process of cascaded four-wave mixing in a monolithic, high-Q silicon nitride microring resonator. The comb is generated from a single-frequency pump laser at 1562 nm and spans 128 THz with a spacing of 226 GHz, which can be tuned slightly with the pump power. In addition, we investigate the RF amplitude noise characteristics of the parametric comb and find that the comb can operate in a low-noise state with a 30 dB reduction in noise as the pump frequency is tuned into the cavity resonance.

High confinement micron-scale silicon nitride high Q ring resonator

We demonstrate high confinement, low-loss silicon nitride ring resonators with intrinsic quality factor (Q) of 3*10(6) operating in the telecommunication C-band. We measure the scattering and absorption losses to be below 0.065dB/cm and 0.055dB/cm, respectively.

Modelocking and femtosecond pulse generation in chip-based frequency combs

We investigate simultaneously the temporal and optical and radio-frequency spectral properties of parametric frequency combs generated in silicon-nitride microresonators and observe that the system undergoes a transition to a mode-locked state. We demonstrate the generation of sub-200-fs pulses at a repetition rate of 99 GHz. Our calculations show that pulse generation in this system is consistent with soliton modelocking. Ultimately, such parametric devices offer the potential of producing ultra-short laser pulses from the visible to mid-infrared regime at repetition rates from GHz to THz.

Harmonic generation in silicon nitride ring resonators.

We demonstrate second- and third-harmonic generation in a centrosymmetric CMOS-compatible material using ring resonators and integrated optical waveguides. The χ(2) response is induced by using the nanoscale structure of the waveguide to break the bulk symmetry of silicon nitride (Si3N4) with the silicon dioxide (SiO2) cladding. Using a high-Q ring resonator cavity to enhance the efficiency of the process, we detect the second-harmonic output in the visible wavelength range with milliwatt input powers at telecom wavelengths. We also observe third-harmonic generation from the intrinsic χ(3) susceptibility of the silicon nitride. Phase matching of the harmonic processes occurs due to the near coincidence of indices of refraction of the fundamental mode at the pump frequency and the corresponding higher-order modes of the harmonic fields.

Ultrashort free-carrier lifetime in low-loss silicon nanowaveguides

We demonstrate reduction of the free-carrier lifetime in a silicon nanowaveguide from 3 ns to 12.2 ps by applying a reverse bias across an integrated p-i-n diode. This observation represents the shortest free-carrier lifetime demonstrated to date in silicon waveguides. Importantly, the presence of the p-i-n structure does not measurably increase the propagation loss of the waveguide. We derive a figure of merit demonstrating equal dependency of the nonlinear phase shift on free-carrier lifetime and linear propagation loss.

Silicon-based monolithic optical frequency comb source

We demonstrate the generation of broad-bandwidth optical frequency combs from a CMOS-compatible integrated microresonator. We characterize the comb quality using a novel self-referencing method and verify that the comb line frequencies are equidistant over a bandwidth of 115 nm (14.5 THz), which is nearly an order of magnitude larger than previous measurements.

Photonic network-on-chip architectures using multilayer deposited silicon materials for high-performance chip multiprocessors

Integrated photonics has been slated as a revolutionary technology with the potential to mitigate the many challenges associated with on- and off-chip electrical interconnection networks. To date, all proposed chip-scale photonic interconnects have been based on the crystalline silicon platform for CMOS-compatible fabrication. However, maintaining CMOS compatibility does not preclude the use of other CMOS-compatible silicon materials such as silicon nitride and polycrystalline silicon. In this work, we investigate utilizing devices based on these deposited materials to design photonic networks with multiple layers of photonic devices. We apply rigorous device optimization and insertion loss analysis on various network architectures, demonstrating that multilayer photonic networks can exhibit dramatically lower total insertion loss, enabling unprecedented bandwidth scalability. We show that significant improvements in waveguide propagation and waveguide crossing insertion losses resulting from using these materials enables the realization of topologies that were previously not feasible using only the single-layer crystalline silicon approaches.

Ultrabroadband supercontinuum generation in a CMOS-compatible platform

We demonstrate supercontinuum generation spanning 1.6 octaves in silicon nitride waveguides. Using a 4.3 cm-long waveguide, with an effective nonlinearity of γ=1.2 W(-1) m(-1), we generate a spectrum extending from 665 nm to 2025 nm (at -30 dB) with 160 pJ pulses. Our results offer potential for a robust, integrated, and low-cost supercontinuum source for applications including frequency metrology, optical coherence tomography, confocal microscopy, and optical communications.

Chip-based frequency combs with sub-100 GHz repetition rates

By fabricating high-Q silicon-nitride spiral resonators, we demonstrate frequency combs spanning over 200 nm with free spectral ranges (FSRs) of 80, 40, and 20 GHz using cascaded four-wave mixing. We characterize the RF beat note for the 20 GHz FSR comb, and the measured linewidth of 3.6 MHz is consistent with thermal fluctuations in the resonator due to amplitude noise of the pump source. These combs represent an important advance towards developing a complementary metal-oxide-semiconductor (CMOS)-based system capable of linking the optical and electronic regimes.

Strong polarization mode coupling in microresonators

We observe strong modal coupling between the TE00 and TM00 modes in Si3N4 ring resonators revealed by avoided crossings of the corresponding resonances. Such couplings result in significant shifts of the resonance frequencies over a wide range around the crossing points. This leads to an effective dispersion that is one order of magnitude larger than the intrinsic dispersion and creates broad windows of anomalous dispersion. We also observe the changes to frequency comb spectra generated in Si3N4 microresonators due to polarization mode and higher-order mode crossings and suggest approaches to avoid these effects. Alternatively, such polarization mode crossings can be used as a tool for dispersion engineering in microresonators.