Reza Salem

Silicon-chip-based ultrafast optical oscilloscope

With the realization of faster telecommunication data rates and an expanding interest in ultrafast chemical and physical phenomena, it has become important to develop techniques that enable simple measurements of optical waveforms with subpicosecond resolution. State-of-the-art oscilloscopes with high-speed photodetectors provide single-shot waveform measurement with 30-ps resolution. Although multiple-shot sampling techniques can achieve few-picosecond resolution, single-shot measurements are necessary to analyse events that are rapidly varying in time, asynchronous, or may occur only once. Further improvements in single-shot resolution are challenging, owing to microelectronic bandwidth limitations. To overcome these limitations, researchers have looked towards all-optical techniques because of the large processing bandwidths that photonics allow. This has generated an explosion of interest in the integration of photonics on standard electronics platforms, which has spawned the field of silicon photonics and promises to enable the next generation of computer processing units and advances in high-bandwidth communications. For the success of silicon photonics in these areas, on-chip optical signal-processing for optical performance monitoring will prove critical. Beyond next-generation communications, silicon-compatible ultrafast metrology would be of great utility to many fundamental research fields, as evident from the scientific impact that ultrafast measurement techniques continue to make. Here, using time-to-frequency conversion via the nonlinear process of four-wave mixing on a silicon chip, we demonstrate a waveform measurement technology within a silicon-photonic platform. We measure optical waveforms with 220-fs resolution over lengths greater than 100 ps, which represent the largest record-length-to-resolution ratio (>450) of any single-shot-capable picosecond waveform measurement technique. Our implementation allows for single-shot measurements and uses only highly developed electronic and optical materials of complementary metal-oxide-semiconductor (CMOS)-compatible silicon-on-insulator technology and single-mode optical fibre. The mature silicon-on-insulator platform and the ability to integrate electronics with these CMOS-compatible photonics offer great promise to extend this technology into commonplace bench-top and chip-scale instruments.

Broad-band continuous-wave parametric wavelength conversion in silicon nanowaveguides

We demonstrate highly broad-band frequency conversion via four-wave mixing in silicon nanowaveguides. Through appropriate engineering of the waveguide dimensions, conversion bandwidths greater than 150 nm are achieved and peak conversion efficiencies of -9.6 dB are demonstrated. Furthermore, utilizing fourth-order dispersion, wave-length conversion across four telecommunication bands from 1477 nm (S-band) to 1672 nm (U-band) is demonstrated with an efficiency of -12 dB.

Modelocking and femtosecond pulse generation in chip-based frequency combs

We investigate simultaneously the temporal and optical and radio-frequency spectral properties of parametric frequency combs generated in silicon-nitride microresonators and observe that the system undergoes a transition to a mode-locked state. We demonstrate the generation of sub-200-fs pulses at a repetition rate of 99 GHz. Our calculations show that pulse generation in this system is consistent with soliton modelocking. Ultimately, such parametric devices offer the potential of producing ultra-short laser pulses from the visible to mid-infrared regime at repetition rates from GHz to THz.

Ultrashort free-carrier lifetime in low-loss silicon nanowaveguides

We demonstrate reduction of the free-carrier lifetime in a silicon nanowaveguide from 3 ns to 12.2 ps by applying a reverse bias across an integrated p-i-n diode. This observation represents the shortest free-carrier lifetime demonstrated to date in silicon waveguides. Importantly, the presence of the p-i-n structure does not measurably increase the propagation loss of the waveguide. We derive a figure of merit demonstrating equal dependency of the nonlinear phase shift on free-carrier lifetime and linear propagation loss.

Frequency conversion over two-thirds of an octave in silicon nanowaveguides

We demonstrate ultrabroad-bandwidth low-power frequency conversion of continuous-wave light in a dispersion engineered silicon nanowaveguide via four-wave mixing. Our process produces continuously tunable four-wave mixing wavelength conversion over two-thirds of an octave from 1241-nm to 2078-nm wavelength light with a pump wavelength in the telecommunications C-band.

Optical time lens based on four-wave mixing on a silicon chip

We propose a new technique to realize an optical time lens for ultrafast temporal processing that is based on four-wave mixing in a silicon nanowaveguide. The demonstrated time lens produces more than 100 pi of phase shift, which is not readily achievable using electro-optic phase modulators. Using this method we demonstrate 20x magnification of a signal consisting of two 3 ps pulses, which allows for temporal measurements using a detector with a 20 GHz bandwidth. Our technique offers the capability of ultrafast temporal characterization and processing in a chip-scale device.

High-speed optical sampling using a silicon-chip temporal magnifier

We demonstrate a single-shot technique for optical sampling based on temporal magnification using a silicon-chip time lens. We demonstrate the largest reported temporal magnification factor yet achieved (>500) and apply this technique to perform 1.3 TS/s single-shot sampling of ultrafast waveforms and to 80-Gb/s performance monitoring. This scheme offers the potential of developing a device that can transform GHz oscilloscopes into instruments capable of measuring signals with THz bandwidths.

All-optical regeneration on a silicon chip.

We demonstrate optical 2R regeneration in an integrated silicon device consisting of an 8-mm-long nanowaveguide followed by a ring-resonator bandpass filter. The regeneration process is based on nonlinear spectral broadening in the waveguide and subsequent spectral filtering through the ring resonator. We measure the nonlinear power transfer function for the device and find an operating peak power of 6 W. Measurements indicate that the output pulse width is determined only by the bandwidth of the bandpass filter. Numerical modeling of the nonlinear process including free-carrier effects shows that this device can be used for all-optical regeneration at telecommunication data rates.

Continuous-wave mid-infrared frequency conversion in silicon nanowaveguides

We report continuous-wave wavelength conversion from the telecom band to the mid-infrared via four-wave mixing in silicon nanowaveguides. We convert a 1636-nm signal to produce a 2384-nm idler, demonstrating a parametric bandwidth of 748 nm.

Large tunable delays using parametric mixing and phase conjugation in Si nanowaveguides

We demonstrate a technique for generating large, all-optical delays while simultaneously minimizing pulse distortion by using temporal phase conjugation via four-wave mixing in Si nanowaveguides. Using this scheme, we achieve continuously tunable delays over a range of 243 ns for 10 Gb/s NRZ data.