Jaeho Jeon

An Ultrahigh‐Performance Photodetector based on a Perovskite–Transition‐Metal‐Dichalcogenide Hybrid Structure

An ultrahigh performance MoS2 photodetector with high photoresponsivity (1.94 × 10(6) A W(-1) ) and detectivity (1.29 × 10(12) Jones) under 520 nm and 4.63 pW laser exposure is demonstrated. This photodetector is based on a methyl-ammonium lead halide perovskite/MoS2 hybrid structure with (3-aminopropyl)triethoxysilane doping. The performance degradation caused by moisture is also minimized down to 20% by adopting a new encapsulation bilayer of octadecyltrichlorosilane/polymethyl methacrylate.

High-Performance 2D Rhenium Disulfide (ReS2) Transistors and Photodetectors by Oxygen Plasma Treatment

A high-performance ReS2 -based thin-film transistor and photodetector with high on/off-current ratio (10(4) ), high mobility (7.6 cm(2) V(-1) s(-1) ), high photoresponsivity (2.5 × 10(7) A W(-1) ), and fast temporal response (rising and decaying time of 670 ms and 5.6 s, respectively) through O2 plasma treatment is reported.

A High-Performance WSe2 /h-BN Photodetector using a Triphenylphosphine (PPh3 )-Based n-Doping Technique.

The effects of triphenylphosphine (PPh3 )-based n-doping and hexagonal boron nitride (h-BN) insertion on a tungsten diselenide (WSe2 ) photodetector are systematically studied, and a very high performance WSe2 /h-BN heterostucture-based photodetector is demonstrated with a record photoresponsivity (1.27 × 10(6) A W(-1) ) and temporal photoresponse (rise time: 2.8 ms, decay time: 20.8 ms) under 520 nm wavelength and 5 pW power laser illumination.

Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic

Recently, negative differential resistance devices have attracted considerable attention due to their folded current–voltage characteristic, which presents multiple threshold voltage values. Because of this remarkable property, studies associated with the negative differential resistance devices have been explored for realizing multi-valued logic applications. Here we demonstrate a negative differential resistance device based on a phosphorene/rhenium disulfide (BP/ReS2) heterojunction that is formed by type-III broken-gap band alignment, showing high peak-to-valley current ratio values of 4.2 and 6.9 at room temperature and 180 K, respectively. Also, the carrier transport mechanism of the BP/ReS2 negative differential resistance device is investigated in detail by analysing the tunnelling and diffusion currents at various temperatures with the proposed analytic negative differential resistance device model. Finally, we demonstrate a ternary inverter as a multi-valued logic application. This study of a two-dimensional material heterojunction is a step forward toward future multi-valued logic device research.

Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design

The effects of graphene n-doping on a metal-graphene contact are studied in combination with 1D edge contacts, presenting a record contact resistance of 23 Ω μm at room temperature (19 Ω μm at 100 K). This contact scheme is applied to a graphene-perovskite hybrid photodetector, significantly improving its performance (0.6 → 1.8 A W(-1) in photoresponsivity and 3.3 × 10(4) → 5.4 × 10(4) Jones in detectivity).

Broad Detection Range Rhenium Diselenide Photodetector Enhanced by (3‐Aminopropyl)Triethoxysilane and Triphenylphosphine Treatment

The effects of triphenylphosphine and (3-aminopropyl)triethoxysilane on a rhenium diselenide (ReSe2 ) photodetector are systematically studied by comparing with conventional MoS2 devices. This study demonstrates a very high performance ReSe2 photodetector with high photoresponsivity (1.18 × 10(6) A W(-1) ), fast photoswitching speed (rising/decaying time: 58/263 ms), and broad photodetection range (possible above 1064 nm).

Extremely Large Gate Modulation in Vertical Graphene/WSe2 Heterojunction Barristor Based on a Novel Transport Mechanism

A WSe2 -based vertical graphene-transition metal dichalcogenide heterojunction barristor shows an unprecedented on-current increase with decreasing temperature and an extremely high on/off-current ratio of 5 × 10(7) at 180 K (3 × 10(4) at room temperature). These features originate from a trap-assisted tunneling process involving WSe2 defect states aligned near the graphene Dirac point.

Ultra-low Doping on Two-Dimensional Transition Metal Dichalcogenides using DNA Nanostructure Doped by a Combination of Lanthanide and Metal Ions.

Here, we propose a novel DNA-based doping method on MoS2 and WSe2 films, which enables ultra-low n- and p-doping control and allows for proper adjustments in device performance. This is achieved by selecting and/or combining different types of divalent metal and trivalent lanthanide (Ln) ions on DNA nanostructures, using the newly proposed concept of Co-DNA (DNA functionalized by both divalent metal and trivalent Ln ions). The available n-doping range on the MoS2 by Ln-DNA is between 6 × 109 and 2.6 × 1010 cm−2. The p-doping change on WSe2 by Ln-DNA is adjusted between −1.0 × 1010 and −2.4 × 1010 cm−2. In Eu3+ or Gd3+-Co-DNA doping, a light p-doping is observed on MoS2 and WSe2 (~1010 cm−2). However, in the devices doped by Tb3+ or Er3+-Co-DNA, a light n-doping (~1010 cm−2) occurs. A significant increase in on-current is also observed on the MoS2 and WSe2 devices, which are, respectively, doped by Tb3+- and Gd3+-Co-DNA, due to the reduction of effective barrier heights by the doping. In terms of optoelectronic device performance, the Tb3+ or Er3+-Co-DNA (n-doping) and the Eu3+ or Gd3+-Co-DNA (p-doping) improve the MoS2 and WSe2 photodetectors, respectively. We also show an excellent absorbing property by Tb3+ ions on the TMD photodetectors.

Atomic Layer Etching Mechanism of MoS2 for Nanodevices

Among the layered transition metal dichalcogenides (TMDs) that can form stable two-dimensional crystal structures, molybdenum disulfide (MoS2) has been intensively investigated because of its unique properties in various electronic and optoelectronic applications with different band gap energies from 1.29 to 1.9 eV as the number of layers decreases. To control the MoS2 layers, atomic layer etching (ALE) (which is a cyclic etching consisting of a radical-adsorption step such as Cl adsorption and a reacted-compound-desorption step via a low-energy Ar+-ion exposure) can be a highly effective technique to avoid inducing damage and contamination that occur during the reactive steps. Whereas graphene is composed of one-atom-thick layers, MoS2 is composed of three-atom-thick S(top)-Mo(mid)-S(bottom) layers; therefore, the ALE mechanisms of the two structures are significantly different. In this study, for MoS2 ALE, the Cl radical is used as the adsorption species and a low-energy Ar+ ion is used as the desorption species. A MoS2 ALE mechanism (by which the S(top), Mo(mid), and S(bottom) atoms are sequentially removed from the MoS2 crystal structure due to the trapped Cl atoms between the S(top) layer and the Mo(mid) layer) is reported according to the results of an experiment and a simulation. In addition, the ALE technique shows that a monolayer MoS2 field effect transistor (FET) fabricated after one cycle of ALE is undamaged and exhibits electrical characteristics similar to those of a pristine monolayer MoS2 FET. This technique is also applicable to all layered TMD materials, such as tungsten disulfide (WS2), molybdenum diselenide (MoSe2), and tungsten diselenide (WSe2).

Controlling Grain Size and Continuous Layer Growth in Two-Dimensional MoS 2 Films for Nanoelectronic Device Application

We report that control over the grain size and lateral growth of monolayer MoS₂ film, yielding a uniform large-area monolayer MoS₂ film, can be achieved by submitting the SiO₂ surfaces of the substrates to oxygen plasma treatment and modulating substrate temperature in chemical vapor deposition (CVD) process. Scanning electron microscopy and atomic force microscopy images and Raman spectra revealed that the MoS₂ lateral growth could be controlled by the surface treatment conditions and process temperatures. Moreover, the obtained monolayer MoS₂ films showed excellent scalable uniformity covering a centimeter-scale SiO₂ /Si substrates, which was confirmed with Raman and photoluminescence mapping studies. Transmission electron microscopy measurements revealed that the MoS₂ film of the monolayer was largely single crystalline in nature. Back-gate field effect transistors based on a CVD-grown uniform monolayer MoS₂ film showed a good current on/off ratio of ~10⁶ and a field effect mobility of 7.23 cm²/V·s. Our new approach to growing MoS₂ films is anticipated to advance studies of MoS₂ or other transition metal dichalcogenide material growth mechanisms and to facilitate the mass production of uniform high-quality MoS₂ films for the commercialization of a variety of applications.