Jaesoong Lee

Full-Color Single Nanowire Pixels for Projection Displays

Multicolor single InGaN/GaN dot-in-nanowire light emitting diodes (LEDs) were fabricated on the same substrate using selective area epitaxy. It is observed that the structural and optical properties of InGaN/GaN quantum dots depend critically on nanowire diameters. Photoluminescence emission of single InGaN/GaN dot-in-nanowire structures exhibits a consistent blueshift with increasing nanowire diameter. This is explained by the significantly enhanced indium (In) incorporation for nanowires with small diameters, due to the more dominant contribution for In incorporation from the lateral diffusion of In adatoms. Single InGaN/GaN nanowire LEDs with emission wavelengths across nearly the entire visible spectral were demonstrated on a single chip by varying the nanowire diameters. Such nanowire LEDs also exhibit superior electrical performance, with a turn-on voltage ∼2 V and negligible leakage current under reverse bias. The monolithic integration of full-color LEDs on a single chip, coupled with the capacity to tune light emission characteristics at the single nanowire level, provides an unprecedented approach to realize ultrasmall and efficient projection display, smart lighting, and on-chip spectrometer.

Modulation of the Dirac point voltage of graphene by ion-gel dielectrics and its application to soft electronic devices.

We investigated systematic modulation of the Dirac point voltage of graphene transistors by changing the type of ionic liquid used as a main gate dielectric component. Ion gels were formed from ionic liquids and a non-triblock-copolymer-based binder involving UV irradiation. With a fixed cation (anion), the Dirac point voltage shifted to a higher voltage as the size of anion (cation) increased. Mechanisms for modulation of the Dirac point voltage of graphene transistors by designing ionic liquids were fully understood using molecular dynamics simulations, which excellently matched our experimental results. It was found that the ion sizes and molecular structures play an essential role in the modulation of the Dirac point voltage of the graphene. Through control of the position of their Dirac point voltages on the basis of our findings, complementary metal-oxide-semiconductor (CMOS)-like graphene-based inverters using two different ionic liquids worked perfectly even at a very low source voltage (V(DD) = 1 mV), which was not possible for previous works. These results can be broadly applied in the development of low-power-consumption, flexible/stretchable, CMOS-like graphene-based electronic devices in the future.

Nanoscale patterning of colloidal quantum dots on transparent and metallic planar surfaces.

The patterning of colloidal quantum dots with nanometer resolution is essential for their application in photonics and plasmonics. Several patterning approaches, such as the use of polymer composites, molecular lock-and-key methods, inkjet printing and microcontact printing of quantum dots have been recently developed. Herein, we present a simple method of patterning colloidal quantum dots for photonic nanostructures such as straight lines, rings and dot patterns either on transparent or metallic substrates. Sub-10 nm width of the patterned line could be achieved with a well-defined sidewall profile. Using this method, we demonstrate a surface plasmon launcher from a quantum dot cluster in the visible spectrum.

Metasurface electrode light emitting diodes with planar light control

The ability of metasurfaces to manipulate light at the subwavelength scale offers unprecedented functionalities for passive and active lasing devices. However, applications of metasurfaces to optical devices are rare due to fabrication difficulties. Here, we present quantum dot light emitting diodes (QDLEDs) with a metasurface-integrated metal electrode and demonstrate microscopically controlled LED emission. By incorporating slot-groove antennas into the metal electrode, we show that LED emission from randomly polarized QD sources can be polarized and directed at will. Utilizing the relation between polarization and emission direction, we also demonstrate microscopic LED beam splitting through the selective choice of polarization.

Nanoscale patterning of colloidal quantum dots for surface plasmon generation

The patterning of colloidal quantum dots with nanometer resolution is essential for their application in photonics and plasmonics. Several patterning approaches, such as the use of polymer composites, molecular lock-and-key methods, inkjet printing, and microcontact printing of quantum dots, have limits in fabrication resolution, positioning and the variation of structural shapes. Herein, we present an adaptation of a conventional liftoff method for patterning colloidal quantum dots. This simple method is easy and requires no complicated processes. Using this method, we formed straight lines, rings, and dot patterns of colloidal quantum dots on metallic substrates. Notably, patterned lines approximately 10 nm wide were fabricated. The patterned structures display high resolution, accurate positioning, and well-defined sidewall profiles. To demonstrate the applicability of our method, we present a surface plasmon generator elaborated from quantum dots.

Ultrathin Colloidal Quantum Dot Films for Optical Amplification: The Role of Modal Confinement and Heat Dissipation

We demonstrate optical pumping lasers based on colloidal quantum dots, with a very thin geometry consisting of a ≈20 nm thick film. Obstacles in ultrasmall laser devices come from the limitation of gain materials and the size of cavities for lasing modes, which requires a minimum thickness of the gain media (typically greater than 50-100 nm). Here we introduce dielectric waveguide structures with a high refractive index, in order to reduce the thickness of quantum dot gain media as well as their threshold energy (≈39 % compared to the original gain medium). Finite-difference time-domain simulations show that the modal confinement factor of thinner quantum dot films can be improved by the presence of an adjacent waveguide layer. We also discuss the possible role of dielectric waveguide layers for efficient heat dissipation during optical pumping. Integrating an extremely thin colloidal quantum dot gain medium into optical waveguides is a promising platform for downscaling on-chip photonic integrated devices, as well as investigating extreme interactions between light and matter such as surface plasmon-photon coupling.

Patterning of colloidal quantum dots for the generation of surface plasmon

Abstract. Patterning of colloidal quantum dot (QD) of a nanometer resolution is important for potential applications in micro- or nanophotonics. Several patterning techniques such as polymer composites, molecular key-lock methods, inkjet printing, and the microcontact printing of QDs have been successfully developed and applied to various plasmonic applications. However, these methods are not easily adapted to conventional complementary metal-oxide semiconductor (CMOS)-compatible processes because of either limits in fabrication resolutions or difficulties in sub-100-nm alignment. Here, we present an adaptation of a conventional lift-off method for the patterning of colloidal QDs. This simple method can be later applied to CMOS processes by changing electron beam lithography to photolithography for building up photon-generation elements in various planar geometries. Various shapes formed by colloidal QD clusters such as straight lines, rings, and dot patterns with sub-100-nm size could be fabricated. The patterned structures show sub-10-nm positioning with good fluorescence properties and well-defined sidewall profiles. To demonstrate the applicability of our method, we present a surface plasmon generator from a QD cluster.