Jaeyoung Jang

Multiwall Carbon Nanotube and Poly(3,4-ethylenedioxythiophene): Polystyrene Sulfonate (PEDOT:PSS) Composite Films for Transistor and Inverter Devices

Highly conductive multiwalled carbon nanotube (MWNT)/Poly(3,4-ethylenedioxythiophene) polymerized with poly(4-styrenesulfonate) (PEDOT:PSS) films were prepared by spin coating a mixture solution. The solution was prepared by dispersing MWNT in the PEDOT:PSS solution in water using ultrasonication without any oxidation process. The effect of the MWNT loading in the solution on the film properties such as surface roughness, work function, surface energy, optical transparency, and conductivity was studied. The conductivity of MWNT/PEDOT:PSS composite film was increased with higher MWNT loading and the high conductivity of MWNT/PEDOT:PSS films enabled them to be used as a source/drain electrode in organic thin film transistor (OTFT). The pentacene TFT with MWNT/PEDOT:PSS S/D electrode showed much higher performance with mobility about 0.2 cm²/(V s) and on/off ratio about 5 × 10⁵ compared to that with PEDOT:PSS S/D electrode (∼0.05 cm²/(V s), 1 × 10⁵). The complementary inverters exhibited excellent characteristics, including high gain value of about 30.

Temperature-Dependent Hall and Field-Effect Mobility in Strongly Coupled All-Inorganic Nanocrystal Arrays

We report on the temperature-dependent Hall effect characteristics of nanocrystal (NC) arrays prepared from colloidal InAs NCs capped with metal chalcogenide complex (MCC) ligands (In2Se4(2-) and Cu7S4(-)). Our study demonstrates that Hall effect measurements are a powerful way of exploring the fundamental properties of NC solids. We found that solution-cast 5.3 nm InAs NC films capped with copper sulfide MCC ligands exhibited high Hall mobility values over 16 cm(2)/(V s). We also showed that the nature of MCC ligands can control doping in NC solids. The comparative study of the temperature-dependent Hall and field-effect mobility values provides valuable insights concerning the charge transport mechanism and points to the transition from a weak to a strong coupling regime in all-inorganic InAs NC solids.

Alkyl Chain Length Dependence of the Field-Effect Mobility in Novel Anthracene Derivatives

We report six asymmetric alkylated anthracene-based molecules with different alkyl side chain lengths for use in organic field-effect transistors (OFETs). Alkyl side chains can potentially improve the solubility and processability of anthracene derivatives. The crystallinity and charge mobility of the anthracene derivatives may be improved by optimizing the side chain length. The highest field-effect mobility of the devices prepared here was 0.55 cm(2)/(V s), for 2-(p-pentylphenylethynyl)anthracene (PPEA). The moderate side chain length appeared to be optimal for promoting self-organization among asymmetric anthracene derivatives in OFETs, and was certainly better than the short or long alkyl side chain lengths, as confirmed by X-ray diffraction measurements.

Reduced Water Vapor Transmission Rate of Graphene Gas Barrier Films for Flexible Organic Field-Effect Transistors

Preventing reactive gas species such as oxygen or water is important to ensure the stability and durability of organic electronics. Although inorganic materials have been predominantly employed as the protective layers, their poor mechanical property has hindered the practical application to flexible electronics. The densely packed hexagonal lattice of carbon atoms in graphene does not allow the transmission of small gas molecules. In addition, its outstanding mechanical flexibility and optical transmittance are expected to be useful to overcome the current mechanical limit of the inorganic materials. In this paper, we reported the measurement of the water vapor transmission rate (WVTR) through the 6-layer 10 × 10 cm(2) large-area graphene films synthesized by chemical vapor deposition (CVD). The WVTR was measured to be as low as 10(-4) g/m(2)·day initially, and stabilized at ∼0.48 g/m(2)·day, which corresponds to 7 times reduction in WVTR compared to bare polymer substrates. We also showed that the graphene-passivated organic field-effect transistors (OFETs) exhibited excellent environmental stability as well as a prolonged lifetime even after 500 bending cycles with strain of 2.3%. We expect that our results would be a good reference showing the graphenes potential as gas barriers for organic electronics.

Thermally evaporated SiO thin films as a versatile interlayer for plasma-based OLED passivation.

Silicon monoxide (SiO) thin films were introduced as an efficient interlayer for achieving plasma-based organic light-emitting diode (OLED) surface passivation. The SiO thin films could be consecutively formed via thermal evaporation, without breaking the vacuum, after deposition of the OLED cathode. The plasma resistivity and UV-blocking characteristics of the SiO interlayer protected the OLED devices against electrical and optical degradation during the plasma-enhanced atomic layer deposition (PEALD) and plasma-enhanced chemical vapor deposition (PECVD) passivation processes. In addition, the nonconformal deposition and hydroxyl group-rich surface characteristics of the SiO thin films yielded enhanced surface pinhole coverage and a higher initial film density in the subsequently deposited PEALD-based Al2O3 barrier film. As a result, the OLEDs with a SiO/Al2O3 bilayer passivation layer displayed a remarkably increased device shelf life compared to devices prepared using Al2O3-only passivation. A MOCON test showed that the water vapor transmission rate (WVTR) of the SiO/Al2O3 bilayer film was 0.0033 g/(m(2) day), 2.3 times lower than the rate of a single Al2O3 barrier film. The results of our study demonstrated the multipurpose role of a SiO interlayer in plasma-based OLED passivation. The layer acted as a damage-free protective layer for the underlying OLED devices and an assistant layer to improve the upper barrier film performance.

Bi 1 x Sb x Alloy Nanocrystals: Colloidal Synthesis, Charge Transport, and Thermoelectric Properties

Nanostructured Bi1-xSbx alloys constitute a convenient system to study charge transport in a nanostructured narrow-gap semiconductor with promising thermoelectric properties. In this work, we developed the colloidal synthesis of monodisperse sub-10 nm Bi1-xSbx alloy nanocrystals (NCs) with controllable size and compositions. The surface chemistry of Bi1-xSbx NCs was tailored with inorganic ligands to improve the interparticle charge transport as well as to control the carrier concentration. Temperature-dependent (10-300 K) electrical measurements were performed on the Bi1-xSbx NC based pellets to investigate the effect of surface chemistry and grain size (∼10-40 nm) on their charge transport properties. The Hall effect measurements revealed that the temperature dependence of carrier mobility and concentration strongly depended on the grain size and the surface chemistry, which was different from the reported bulk behavior. At low temperatures, electron mobility in nanostructured Bi1-xSbx was directly proportional to the average grain size, while the concentration of free carriers was inversely proportional to the grain size. We propose a model explaining such behavior. Preliminary measurements of thermoelectric properties showed a ZT value comparable to those of bulk Bi1-xSbx alloys at 300 K, suggesting a potential of Bi1-xSbx NCs for low-temperature thermoelectric applications.

Photopatternable Poly(4-styrene sulfonic acid)-Wrapped MWNT Thin-Film Source/Drain Electrodes for Use in Organic Field-Effect Transistors

We describe the cross-linking of poly(4-styrene-sulfonic acid) (PSS) by exposure to ultraviolet (UV) light (λ = 255 nm) under a vacuum. Fourier transform infrared (FT-IR) spectroscopy and X-ray photoelectron spectroscopy (XPS) showed that the photo-crosslinking of PSS resulted from coupling between radicals that were generated in the polymer chains by UV excitation. The photo-cross-linkable characteristics of PSS were employed to fabricate solution-processable, photopatternable, and conductive PSS-wrapped multiwalled carbon nanotube (MWNT) composite thin films by wrapping MWNTs with PSS in water. During photo-cross-linking, the work function of the PSS-wrapped MWNTs decreased from 4.83 to 4.53 eV following cleavage of a significant number of sulfonic acid groups. Despite the decreased work function of the PSS-wrapped MWNTs, the photopatterned PSS-wrapped MWNTs produced good source/drain electrodes for OFETs, yielding a mobility (0.134 ± 0.056 cm²/(V s)) for the TIPS-PEN field-effect transistors fabricated using PSS-wrapped MWNTs as source/drain electrodes that was higher than the mobility of gold-based transistors (0.011 ± 0.004 cm²/(V s)).

Solution-Processed, Ultrathin Solar Cells from CdCl3–-Capped CdTe Nanocrystals: The Multiple Roles of CdCl3– Ligands

Solution-processed CdTe solar cells using CdTe nanocrystal (NC) ink may offer an economically viable route for large-scale manufacturing. Here we design a new CdCl3(-)-capped CdTe NC ink by taking advantage of novel surface chemistry. In this ink, CdCl3(-) ligands act as surface ligands, sintering promoters, and dopants. Our solution chemistry allows obtaining very thin continuous layers of high-quality CdTe which is challenging for traditional vapor transport methods. Using benign solvents, in air, and without additional CdCl2 treatment, we obtain a well-sintered CdTe absorber layer from the new ink and demonstrate thin-film solar cells with power conversion efficiency over 10%, a record efficiency for sub-400 nm thick CdTe absorber layer.

High-Performance Triethylsilylethynyl Anthradithiophene Transistors Prepared without Solvent Vapor Annealing: The Effects of Self-Assembly during Dip-Coating

Solution-processable small-molecule organic semiconductors have recently attracted significant attention for use as the active channel layers in organic field-effect transistors due to their good intrinsic charge carrier mobility and easy processability. Dip-coating is a good method for optimizing the film morphology and molecular ordering of the small-molecular semiconductors because the drying speed can be quantitatively controlled at the air-solution-substrate contact line. Here, we report the preparation of highly crystalline triethylsilylethynyl-anthradithiophene (TES-ADT) crystal arrays that exhibit an excellent field-effect mobility (up to 1.8 cm(2)/(V s)) via an optimized one-step dip-coating process. High-quality TES-ADT crystals were grown without solvent vapor annealing postprocessing steps, which were previously thought to be essential for improving the morphology, crystallinity, and electrical characteristics of TES-ADT thin films. An interesting correlation between the optimal pull-out rate and the self-assembly tendencies of some soluble acene semiconductors was observed, and the origin of the correlation was investigated. Our work demonstrates an alternative simple approach to achieving highly crystalline TES-ADT thin films, and further proposes a prospective method for optimizing the formation of thin films via the molecular self-assembly of soluble acenes.

Fabrication of high-performance composite electrodes composed of multiwalled carbon nanotubes and glycerol-doped poly(3,4-ethylenedioxythiophene):polystyrene sulfonate for use in organic devices

In this study, composite films composed of highly conductive multiwalled carbon nanotubes (MWCNTs) and poly(3,4-ethylenedioxythiophene) polymerized with poly(4-styrenesulfonate) (PEDOT:PSS) were fabricated via additional organic-compound doping. The effects of glycerol (GL) or dimethyl sulfoxide (DMSO) doping on the film properties, such as surface roughness, work function (Φ), and conductivity, were studied for both PEDOT:PSS and MWCNT/PEDOT:PSS composite systems. The interactive couplings between the PEDOT and PSS molecules became disordered upon doping with GL or DMSO, which altered the conjugated structure between the PEDOT and PSS chains. Therefore, the electrical conductivity of the PEDOT:PSS and MWCNT/PEDOT:PSS films was enhanced by the addition of GL or DMSO molecules. The GL-doped PEDOT:PSS (PEGL) and ultraviolet (UV)-oxidized MWCNT/PEDOT:PSS (0.2-UVGL) films exhibited comparable work functions (PEGL = 4.87 eV, 0.2-UVGL = 5.0 eV). They also had lower sheet resistances (Rs; PEGL = 806.7 ± 50 Ω □−1, 0.2-UVGL = 613 ± 120 Ω □−1) as compared to those of the undoped PEDOT:PSS (Φ = 4.92 eV, Rs = 1.03 ± 0.10 MΩ □−1) and MWCNT/PEDOT:PSS composites (Φ = 4.7 eV, Rs = 2184 ± 244 Ω □−1). Furthermore, because of these excellent electrical properties, the doped MWCNT/PEDOT:PSS films showed great potential as the source/drain electrode in an organic thin-film transistor and as the catalytic counter electrode in a dye-sensitized solar cell. In conclusion, devices with 0.2-UVGL electrodes performed better than the corresponding devices with other MWCNT/PEDOT:PSS composite electrodes and the device characteristics were comparable to that of standard devices with platinum/fluorine-doped tin oxide electrodes.