Jakub Holovsky

Organometallic Halide Perovskites: Sharp Optical Absorption Edge and Its Relation to Photovoltaic Performance

Solar cells based on organometallic halide perovskite absorber layers are emerging as a high-performance photovoltaic technology. Using highly sensitive photothermal deflection and photocurrent spectroscopy, we measure the absorption spectrum of CH3NH3PbI3 perovskite thin films at room temperature. We find a high absorption coefficient with particularly sharp onset. Below the bandgap, the absorption is exponential over more than four decades with an Urbach energy as small as 15 meV, which suggests a well-ordered microstructure. No deep states are found down to the detection limit of ∼1 cm(-1). These results confirm the excellent electronic properties of perovskite thin films, enabling the very high open-circuit voltages reported for perovskite solar cells. Following intentional moisture ingress, we find that the absorption at photon energies below 2.4 eV is strongly reduced, pointing to a compositional change of the material.

Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment

Silicon heterojunction solar cells have high open-circuit voltages thanks to excellent passivation of the wafer surfaces by thin intrinsic amorphous silicon (a-Si:H) layers deposited by plasma-enhanced chemical vapor deposition. We show a dramatic improvement in passivation when H2 plasma treatments are used during film deposition. Although the bulk of the a-Si:H layers is slightly more disordered after H2 treatment, the hydrogenation of the wafer/film interface is nevertheless improved with as-deposited layers. Employing H2 treatments, 4 cm2 heterojunction solar cells were produced with industry-compatible processes, yielding open-circuit voltages up to 725 mV and aperture area efficiencies up to 21%.

Nanostructured three-dimensional thin film silicon solar cells with very high efficiency potential

We report on the experimental realization of amorphous/microcrystalline silicon tandem solar cells (Micromorph) based on our three-dimensional design. An enhancement is reached in the short-circuit current by 40%, with an excellent open-circuit voltage of 1.41V and a fill factor of 72%. We have used nanoholes or microholes dry etched into the ZnO front contact layer. Monte Carlo optical modeling shows that stable efficiency of amorphous silicon p-i-n solar cells in over 12% range is possible. For the Micromorph cells, efficiency over 15% with the thickness of amorphous Si below 200 nm and of microcrystalline Si around 500 nm is possible.

Organic-Inorganic Halide Perovskites: Perspectives for Silicon-Based Tandem Solar Cells

We investigate the efficiency potential of organic-inorganic halide perovskite/crystalline silicon tandem solar cells, a new class of photovoltaic devices targeting long-term cost reductions by ultrahigh conversion efficiencies. Methyl ammonium lead triiodide perovskite solar cells are particularly interesting as the top cell in Si-based tandem devices due to their suitable band gap, high photovoltage, and low sub-bandgap absorption. We derive optical models for a perovskite/Si tandem cell with Lambertian light trapping in the perovskite top cell, as well as for a top cell in the single pass limit. We find that unlike for other thin-film device architectures, light trapping is not required for the triiodide perovskite/Si tandem to reach matched top and bottom cell currents. While a Lambertian top cell could be employed in a four-terminal tandem, a top cell in the single pass limit enables a current-matched monolithic device with realistic top cell thicknesses. We calculate a limiting efficiency of 35.67% for an ideal (no parasitic absorption, ideal contacts) monolithic tandem, assuming a top cell open-circuit voltage of 1100 mV.

Is light-induced degradation of a-Si:H/c-Si interfaces reversible?

Thin hydrogenated amorphous silicon (a-Si:H) films deposited on crystalline silicon (c-Si) surfaces are sensitive probes for the bulk electronic properties of a-Si:H. Here, we use such samples during repeated low-temperature annealing and visible-light soaking to investigate the long-term stability of a-Si:H films. We observe that during annealing the electronic improvement of the interfaces follows stretched exponentials as long as hydrogen evolution in the films can be detected. Once such evolution is no longer observed, the electronic improvement occurs much faster. Based on these findings, we discuss how the reversibility of light-induced defects depends on (the lack of observable) hydrogen evolution.

Measurement of the Open-Circuit Voltage of Individual Subcells in a Dual-Junction Solar Cell

Dual-junction solar cells have the potential for higher conversion efficiencies than single junctions, thanks to a better utilization of the solar spectrum. However, their optimization is more complex because the monolithic interconnection makes the individual subcell electrical measurement difficult or impossible. This study presents a new technique to measure the open-circuit voltage VOC of each individual subcell of a dual-junction device with a method that circumvents the need for completely selective illumination. The method is based on the description of the total device VOC as a function of two independent variables determined by two distinct illumination spectra. Without completely selective illumination, one can measure only a limited range of this function; however, an unambiguous extension gives values corresponding to the conditions of ideal selectivity, which correspond in turn to the VOC of the individual subcells at 1-sun illumination. This method does not rely on any specific electrical or optical model of solar cell. Method is successfully tested with a simple measurement setup based on commercially available luminescence diodes and voltmeters in combination with specially prepared three-terminal dual-junction thin-film silicon solar cells.

Experimental Limits of Light Capture in Thin Film Silicon Devices

New approach for the determination of the angular distribution of the scattered light at nano-rough surfaces/interfaces from AFM (Atomic Force Microscopy) data is presented. Calculation comes from modeling the electromagnetic field in the tight vicinity of the nano-rough surface by complex solution of Maxwells equations and subsequent near field to far field transform. This method is demonstrated for four types of transparent conductive oxides (with rough free surfaces) deposited on glass substrates. As a result we have the amount and angular distribution of the scattered light „observed” in both transmission and reflection. Moreover calculation can be done for real sample dimensions (to compare the results with the measurement of the angular distribution function using LED laser) or for a semi-infinite sample which suppresses the interference effects and thus such distribution functions can be used as an input parameter for our 3-dimensional optical model CELL for thin film silicon solar cell modeling. In the second part of this contribution we describe our experiment of thin film silicon solar cell characterization by Light Beam Induced Current (LBIC). This measurement done for laboratory solar cell structures reveals the light scattering and light trapping properties of the multilayer stack on a glass substrate. We suggest the test structure for the direct back reflector quality comparison and thus also for its optimization.

Fast Quantum Efficiency Measurement and Characterization of Different Thin Film Solar Cells by Fourier Transform Photocurrent Spectroscopy

Fourier-transform Photocurrent Spectroscopy (FTPS) was introduced four years ago [1] as a method for fast and very sensitive evaluation of the spectral dependence of the optical absorption coefficient of photoconductive thin films and recently also for the quality assessment of thin film silicon solar cells [2]. In this contribution we refer about the FTPS characterization of different thin film solar cells (amorphous silicon, microcrystalline silicon, micromorph tandem, polymer solar cells) with the main target of a fast quantum efficiency (QE) measurement. Further, we study the possibility of the FTPS-QE measurement of single cell incorporated in the solar module when only the module terminals can be used for contacting. The FTPS measurement has proved to be very fast (time scale of seconds), enabling a quick verification of quantum efficiency and subgap absorption measurement of absorber of different thin film solar cells