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Dive into the research topics where James A Cunningham is active.

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Featured researches published by James A Cunningham.


IEEE Transactions on Reliability | 1970

Corrosion Resistance of Several Integrated-Circuit Metallization Systems

James A Cunningham; Clyde R. Fuller; C. T. Haywood

Accelerated life data are presented on several integratedcircuit metallization systems including Al, Mo-Au, Ti-Pt-Au, and a new system Ti: W-Au where the RF sputtered Ti: W layer is a pseudo alloy of 10-20 percent Ti in W. Life tests include total water immersion, high-pressure steam and 85°C/85 percent RH/bias on bare and plastic-encapsulated devices. Heat-age and resistivity-ratio data are presented showing the metallurgical stability of the Ti: W-Au system. The corrosion resistance decreases as Ti-Pt-Au > Ti: W-Au >> Mo-Au ? Al.


international electron devices meeting | 1970

The corrosion resistance of several integrated-circuit metallization systems

James A Cunningham; C.R. Fuller; C.T. Haywood

Accelerated life data are presented on several integrated-circuit metallization systems including Al, Mo-Au, Ti-Pt-Au, and a new system W:Ti-Au, where the r-f-sputtered W:Ti layer is a pseudo-alloy of 10-20% Ti in W. Life tests include total water immersion, high-pressure steam, and 85°C/85% RH/bias on bare and plastic-encapsulated devices. Heat age and resistivity-ratio data are presented showing the metallurgical stability of the W:Ti-Au system. In order of decreasing corrosion resistance, Ti-Pt-Au > W:Ti-Au > > Mo-Au ≥ Al.


Archive | 1967

Rf sputtering method and system

John H Cash; James A Cunningham


Archive | 1964

Multilevel expanded metallic contacts for semiconductor devices

James A Cunningham; Robert P. Williams


Archive | 1972

Sputtering apparatus for forming ohmic contacts for semiconductor devices

James A Cunningham; Coy D Orr


Archive | 1975

Processes of forming insulated gate field effect transistors with channel lengths of one micron in integrated circuits with component isolated and product

James A Cunningham; James E. Schroeder; Mark Roman Guidry


Archive | 1970

Modified tungsten metallization for semiconductor devices

James A Cunningham; Clyde R. Fuller


Archive | 1964

Metallic contacts for semiconductor devices

James A Cunningham; Robert P. Williams


Archive | 1970

METALLIZATION SYSTEM FOR SEMICONDUCTORS

James A Cunningham; Clyde R. Fuller; Robert C. Hooper; Robert H. Wakefield


Archive | 1971

Insulated gate field effect transistor circuits and their method of fabrication

James A Cunningham; Jr Robert H Wakefield; Jr Mark R Guidry

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