James Bullock

A common mass scale for satellite galaxies of the Milky Way.

The Milky Way has at least twenty-three known satellite galaxies that shine with luminosities ranging from about a thousand to a billion times that of the Sun. Half of these galaxies were discovered in the past few years in the Sloan Digital Sky Survey, and they are among the least luminous galaxies in the known Universe. A determination of the mass of these galaxies provides a test of galaxy formation at the smallest scales and probes the nature of the dark matter that dominates the mass density of the Universe. Here we use new measurements of the velocities of the stars in these galaxies to show that they are consistent with them having a common mass of about 107 within their central 300u2009parsecs. This result demonstrates that the faintest of the Milky Way satellites are the most dark-matter-dominated galaxies known, and could be a hint of a new scale in galaxy formation or a characteristic scale for the clustering of dark matter.

The Sagittarius impact as an architect of spirality and outer rings in the Milky Way

Like many galaxies of its size, the Milky Way is a disk with prominent spiral arms rooted in a central bar, although our knowledge of its structure and origin is incomplete. Traditional attempts to understand our Galaxy’s morphology assume that it has been unperturbed by major external forces. Here we report simulations of the response of the Milky Way to the infall of the Sagittarius dwarf galaxy (Sgr), which results in the formation of spiral arms, influences the central bar and produces a flared outer disk. Two ring-like wrappings emerge towards the Galactic anti-Centre in our model that are reminiscent of the low-latitude arcs observed in the same area of the Milky Way. Previous models have focused on Sgr itself to reproduce the dwarf’s orbital history and place associated constraints on the shape of the Milky Way gravitational potential, treating the Sgr impact event as a trivial influence on the Galactic disk. Our results show that the Milky Way’s morphology is not purely secular in origin and that low-mass minor mergers predicted to be common throughout the Universe probably have a similarly important role in shaping galactic structure.

Molybdenum oxide MoOx: A versatile hole contact for silicon solar cells

This letter examines the application of transparent MoOx (xu2009<u20093) films deposited by thermal evaporation directly onto crystalline silicon (c-Si) to create hole-conducting contacts for silicon solar cells. The carrier-selectivity of MoOx based contacts on both n- and p-type surfaces is evaluated via simultaneous consideration of the contact recombination parameter J0c and the contact resistivity ρc. Contacts made to p-type wafers and p+ diffused regions achieve optimum ρc values of 1 and 0.2 mΩ·cm2, respectively, and both result in a J0c of ∼200 fA/cm2. These values suggest that significant gains can be made over conventional hole contacts to p-type material. Similar MoOx contacts made to n-type silicon result in higher J0c and ρc with optimum values of ∼300 fA/cm2 and 30 mΩ·cm2 but still offer significant advantages over conventional approaches in terms of contact passivation, optical properties, and device fabrication.

Magnesium Fluoride Electron-Selective Contacts for Crystalline Silicon Solar Cells

In this study, we present a novel application of thin magnesium fluoride films to form electron-selective contacts to n-type crystalline silicon (c-Si). This allows the demonstration of a 20.1%-efficient c-Si solar cell. The electron-selective contact is composed of deposited layers of amorphous silicon (∼6.5 nm), magnesium fluoride (∼1 nm), and aluminum (∼300 nm). X-ray photoelectron spectroscopy reveals a work function of 3.5 eV at the MgF2/Al interface, significantly lower than that of aluminum itself (∼4.2 eV), enabling an Ohmic contact between the aluminum electrode and n-type c-Si. The optimized contact structure exhibits a contact resistivity of ∼76 mΩ·cm(2), sufficiently low for a full-area contact to solar cells, together with a very low contact recombination current density of ∼10 fA/cm(2). We demonstrate that electrodes functionalized with thin magnesium fluoride films significantly improve the performance of silicon solar cells. The novel contacts can potentially be implemented also in organic optoelectronic devices, including photovoltaics, thin film transistors, or light emitting diodes.

Chemical Bath Deposition of p-Type Transparent, Highly Conducting (CuS)x:(ZnS)1-x Nanocomposite Thin Films and Fabrication of Si Heterojunction Solar Cells.

P-type transparent conducting films of nanocrystalline (CuS)x:(ZnS)1-x were synthesized by facile and low-cost chemical bath deposition. Wide angle X-ray scattering (WAXS) and high resolution transmission electron microscopy (HRTEM) were used to evaluate the nanocomposite structure, which consists of sub-5 nm crystallites of sphalerite ZnS and covellite CuS. Film transparency can be controlled by tuning the size of the nanocrystallites, which is achieved by adjusting the concentration of the complexing agent during growth; optimal films have optical transmission above 70% in the visible range of the spectrum. The hole conductivity increases with the fraction of the covellite phase and can be as high as 1000 S cm(-1), which is higher than most reported p-type transparent materials and approaches that of n-type transparent materials such as indium tin oxide (ITO) and aluminum doped zinc oxide (AZO) synthesized at a similar temperature. Heterojunction p-(CuS)x:(ZnS)1-x/n-Si solar cells were fabricated with the nanocomposite film serving as a hole-selective contact. Under 1 sun illumination, an open circuit voltage of 535 mV was observed. This value compares favorably to other emerging heterojunction Si solar cells which use a low temperature process to fabricate the contact, such as single-walled carbon nanotube/Si (370-530 mV) and graphene/Si (360-552 mV).

Amorphous silicon passivated contacts for diffused junction silicon solar cells

Carrier recombination at the metal contacts is a major obstacle in the development of high-performance crystalline silicon homojunction solar cells. To address this issue, we insert thin intrinsic hydrogenated amorphous silicon [a-Si:H(i)] passivating films between the dopant-diffused silicon surface and aluminum contacts. We find that with increasing a-Si:H(i) interlayer thickness (from 0 to 16u2009nm) the recombination loss at metal-contacted phosphorus (n+) and boron (p+) diffused surfaces decreases by factors of ∼25 and ∼10, respectively. Conversely, the contact resistivity increases in both cases before saturating to still acceptable values of ∼ 50 mΩ cm2 for n+ and ∼100 mΩ cm2 for p+ surfaces. Carrier transport towards the contacts likely occurs by a combination of carrier tunneling and aluminum spiking through the a-Si:H(i) layer, as supported by scanning transmission electron microscopy–energy dispersive x-ray maps. We explain the superior contact selectivity obtained on n+ surfaces by more favorable band offsets and capture cross section ratios of recombination centers at the c-Si/a-Si:H(i) interface.

Grown-in defects limiting the bulk lifetime of p-type float-zone silicon wafers

This work has been supported by the Australian nRenewable Energy Agency (ARENA) fellowships program and nthe Australian Research Council (ARC) Future Fellowships nprogram.

Proof-of-concept p-type silicon solar cells with molybdenum oxide partial rear contacts

This paper explores the application of transparent MoOx (x<;3) films as hole-collecting contacts on the rear-side of crystalline silicon solar cells. 2D simulations, which consider experimental contact recombination J0c and resistivity ρc values, demonstrate that the benefits of the MoOx based contacts are best exploited by reducing the rear contact fraction. This concept is demonstrated experimentally using simple p-type cells featuring a ~5% rear fraction MoOx contact. These cells attain a conversion efficiency of 20.4%, a promising result, given the early stage of development for this technology.

Efficient solar-driven electrochemical CO2 reduction to hydrocarbons and oxygenates

Solar to chemical energy conversion could provide an alternative to mankinds unsustainable use of fossil fuels. One promising approach is the electrochemical reduction of CO2 into chemical products, in particular hydrocarbons and oxygenates which are formed by multi-electron transfer reactions. Here, a nanostructured Cu–Ag bimetallic cathode is utilized to selectively and efficiently facilitate these reactions. When operated in an electrolysis cell, the cathode provides a constant energetic efficiency for hydrocarbon and oxygenate production. As a result, when coupled to Si photovoltaic cells, solar conversion efficiencies of 3–4% to the target products are achieved for 0.35 to 1 Sun illumination. Use of a four-terminal III–V/Si tandem solar cell configuration yields a conversion efficiency to hydrocarbons and oxygenates exceeding 5% at 1 Sun illumination. This study provides a clear framework for the future advancement of efficient solar-driven CO2 reduction devices.

Skin care for healthy silicon solar cells

Effective surface treatments suppress possible recombination losses and confine photogenerated electrons and holes within the bulk of the silicon wafer, thus maximizing their number and the electrochemical potential that they can deliver to a load. For that to happen, it is necessary to create regions with a high conductivity for one carrier and low for the other, which is the basis for their separation. There is a common thread joining surface passivation and carrier-selective contacts, and the same principles apply to both. One is the manipulation of the concentrations of electrons and holes, which can be achieved by doping or by depositing materials with an appropriate bandgap, work function and conductivity. The other method is to use hydrogen-rich semi-insulators that bond chemically to the silicon atoms. When used as part of a contact structure, they need to be sufficiently thin to permit current flow. Examples of such passivated contacts are dopant diffusions coated with thin insulators or a-Si:H(i), doped polysilicon/SiOx structures, and some transparent conductors.