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MRS Proceedings | 1988

Some Recent Results of Fundamental Studies on Beam-Induced Surface Processes

Jan Dieleman

Recent results of studies on the mechanism of processes induced by the interaction of beams of (reactive) particles with surfaces in UHV, often combined with concurrent bombardment of the surface with low-energy ion or excimer laser beams, are reviewed. Angular-resolved mass spectrometry combined with time-of-flight studies on the desorbing products is used as a key diagnostic. A more complete picture is obtained using several other diagnostic tools to characterize the surface before, during or after the interaction. Interactions at Si and Cu surfaces will be emphasized. The review will deal successively with data for interaction with a single beam of Cl 2 , low-energy noble gas ions or excimer laser pulses, followed by data on the concurrent interaction of crossed beams of Cl 2 and low-energy noble gas ions or excimer laser pulses with these surfaces. Some conclusions will be drawn.


Archive | 1983

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE BY MEANS OF PLASMA ETCHING

Jan Dieleman; Franciscus Hubertus Marie Sanders


Archive | 1978

Camera tube employing silicon-chalcogenide target with heterojunction

Jan Dieleman; Arthur Marie Eugene Hoeberechts


Archive | 1974

Camera tube having a target with heterojunction

Jan Dieleman; Arthur Marie Eugene Hoeberechts


Archive | 1982

Camera tube with graded tellurium or arsenic target

Jan Dieleman; Joannes H. J. Van Dommelen; Petrus J. A. M. Derks


Archive | 1979

Camera tube with graduated concentration of tellurium in target

Petrus J. A. M. Derks; Joannes H. J. Van Dommelen; Jan Dieleman


MRS Proceedings | 1991

Characterization of the Depositing Flux in Laser Ablation Deposition (LAD).

Jacques Constant Stefan Kools; Jan Dieleman


Archive | 1983

Verfahren zur Herstellung einer Halbleiteranordnung unter Verwendung eines Plasmaätzverfahrens

Jan Dieleman; Franciscus Hubertus Marie Sanders


Archive | 1983

Procédé pour la fabrication d'un dispositif semi-conducteur utilisant une gravure à l'aide d'un plasma

Jan Dieleman; Franciscus Hubertus Marie Sanders


Archive | 1982

Camera tube selenium target including arsenic increasing in concentration from radiation side

Petrus J. A. M. Derks; Joannes H. J. Van Dommelen; Jan Dieleman

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