Jangmi Baek

Single-Crystal Poly(3,4-ethylenedioxythiophene) Nanowires with Ultrahigh Conductivity

We developed single-crystal poly(3,4-ethylenedioxythiopene) (PEDOT) nanowires with ultrahigh conductivity using liquid-bridge-mediated nanotransfer printing with vapor phase polymerization. The single-crystal PEDOT nanowires are formed from 3,4-ethylenedioxythiophene (EDOT) monomers that are self-assembled and crystallized during vapor phase polymerization process within nanoscale channels of a mold having FeCl3 catalysts. These PEDOT nanowires, aligned according to the pattern in the mold, are then directly transferred to specific positions on a substrate to generate a nanowire array by a direct printing process. The PEDOT nanowires have closely packed single-crystalline structures with orthorhombic lattice units. The conductivity of the single-crystal PEDOT nanowires is an average of 7619 S/cm with the highest up to 8797 S/cm which remarkably exceeds literature values of PEDOT nanostructures/thin films. Such distinct conductivity enhancement of single-crystal PEDOT nanowires can be attributed to improved carrier mobility in PEDOT nanowires. To demonstrate usefulness of single-crystal PEDOT nanowires, we fabricated an organic nanowire field-effect transistor array contacting the ultrahigh conductive PEDOT nanowires as metal electrodes.

Inkjet‐Assisted Nanotransfer Printing for Large‐Scale Integrated Nanopatterns of Various Single‐Crystal Organic Materials

Inkjet-assisted nanotransfer printing (inkjet-NTP) facilitates spatial control of many arrays of various organic functional materials on a single substrate with a high-throughput integration process, enabling monolithic integration of various organic nanopatterns. Inkjet-NTP enables wafer-scale organic electronic circuits composed of field-effect transistors, complementary inverters, and p-n diodes, demonstrating its capability to produce a high-performance, multifunctional organic chip.

Wafer-scale single-crystal perovskite patterned thin films based on geometrically-confined lateral crystal growth

We report a facile roll-printing method, geometrically confined lateral crystal growth, for the fabrication of large-scale, single-crystal CH3NH3PbI3 perovskite thin films. Geometrically confined lateral crystal growth is based on transfer of a perovskite ink solution via a patterned rolling mould to a heated substrate, where the solution crystallizes instantly with the immediate evaporation of the solvent. The striking feature of this method is that the instant crystallization of the feeding solution under geometrical confinement leads to the unidirectional lateral growth of single-crystal perovskites. Here, we fabricated single-crystal perovskites in the form of a patterned thin film (3 × 3 inch) with a high carrier mobility of 45.64 cm2 V−1 s−1. We also used these single-crystal perovskite thin films to construct solar cells with a lateral configuration. Their active-area power conversion efficiency shows a highest value of 4.83%, which exceeds the literature efficiency values of lateral perovskite solar cells.

Cross-Stacked Single-Crystal Organic Nanowire p−n Nanojunction Arrays by Nanotransfer Printing

We fabricated cross-stacked organic p-n nanojunction arrays made of single-crystal 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-PEN) and fullerene (C60) nanowires as p-type and n-type semiconductors, respectively, by using a nanotransfer printing technique. Single-crystal C60 nanowires were synthesized inside nanoscale channels of a mold and directly transferred onto a desired position of a flexible substrate by a lubricant liquid layer. In the consecutive printing process, single-crystal TIPS-PEN nanowires were grown in the same way and then perpendicularly aligned and placed onto the C60 nanowire arrays, resulting in a cross-stacked single-crystal organic p-n nanojunction array. The cross-stacked single-crystal TIPS-PEN/C60 nanowire p-n nanojunction devices show rectifying behavior with on/off ratio of ∼ 13 as well as photodiode characteristic with photogain of ∼ 2 under a light intensity of 12.2 mW/cm(2). Our study provides a facile, solution-processed approach to fabricate a large-area array of organic crystal nanojunction devices in a desired arrangement for future nanoscale electronics.

Heterogeneous Monolithic Integration of Single-Crystal Organic Materials

Manufacturing high-performance organic electronic circuits requires the effective heterogeneous integration of different nanoscale organic materials with uniform morphology and high crystallinity in a desired arrangement. In particular, the development of high-performance organic electronic and optoelectronic devices relies on high-quality single crystals that show optimal intrinsic charge-transport properties and electrical performance. Moreover, the heterogeneous integration of organic materials on a single substrate in a monolithic way is highly demanded for the production of fundamental organic electronic components as well as complex integrated circuits. Many of the various methods that have been designed to pattern multiple heterogeneous organic materials on a substrate and the heterogeneous integration of organic single crystals with their crystal growth are described here. Critical issues that have been encountered in the development of high-performance organic integrated electronics are also addressed.

Controlled Growth of Rubrene Nanowires by Eutectic Melt Crystallization

Organic semiconductors including rubrene, Alq3, copper phthalocyanine and pentacene are crystallized by the eutectic melt crystallization. Those organic semiconductors form good eutectic systems with the various volatile crystallizable additives such as benzoic acid, salicylic acid, naphthalene and 1,3,5-trichlorobenzene. Due to the formation of the eutectic system, organic semiconductors having originally high melting point (Tm > 300 °C) are melted and crystallized at low temperature (Te = 40.8–133 °C). The volatile crystallizable additives are easily removed by sublimation. For a model system using rubrene, single crystalline rubrene nanowires are prepared by the eutectic melt crystallization and the eutectic-melt-assisted nanoimpinting (EMAN) technique. It is demonstrated that crystal structure and the growth direction of rubrene can be controlled by using different volatile crystallizable additives. The field effect mobility of rubrene nanowires prepared using several different crystallizable additives are measured and compared.

Observation of Charge Separation and Space-Charge Region in Single-Crystal P3HT/C60 Heterojunction Nanowires.

We directly observed charge separation and a space-charge region in an organic single-crystal p-n heterojunction nanowire, by means of scanning photocurrent microscopy. The axial p-n heterojunction nanowire had a well-defined planar junction, consisted of P3HT (p-type) and C60 (n-type) single crystals and was fabricated by means of the recently developed inkjet-assisted nanotransfer printing technique. The depletion region formed at the p-n junction was directly observed by exploring the spatial distribution of photogenerated carriers along the heterojunction nanowire under various applied bias voltages. Our study provides a facile approach toward the precise characterization of charge transport in organic heterojunction systems as well as the design of efficient nanoscale organic optoelectronic devices.

Nanotransfer Printing: Inkjet-Assisted Nanotransfer Printing for Large-Scale Integrated Nanopatterns of Various Single-Crystal Organic Materials (Adv. Mater. 15/2016).

Inkjet-assisted nanotransfer printing, described by M. M. Sung and co-workers on page 2874, enables monolithic integration of crystalline nanowire arrays with a diverse range of organic materials. Droplets of different molecular ink solutions are transformed into single-crystal organic nanowires within nanoscale channels at selected locations in a nanoscale line-patterned mold. Patterned arrays of various functional nanowires within the mold are then printed directly onto a substrate through the liquid-bridge-mediated transfer process.