Yong-Eun Koo Lee

Single-Crystal Poly(3,4-ethylenedioxythiophene) Nanowires with Ultrahigh Conductivity

We developed single-crystal poly(3,4-ethylenedioxythiopene) (PEDOT) nanowires with ultrahigh conductivity using liquid-bridge-mediated nanotransfer printing with vapor phase polymerization. The single-crystal PEDOT nanowires are formed from 3,4-ethylenedioxythiophene (EDOT) monomers that are self-assembled and crystallized during vapor phase polymerization process within nanoscale channels of a mold having FeCl3 catalysts. These PEDOT nanowires, aligned according to the pattern in the mold, are then directly transferred to specific positions on a substrate to generate a nanowire array by a direct printing process. The PEDOT nanowires have closely packed single-crystalline structures with orthorhombic lattice units. The conductivity of the single-crystal PEDOT nanowires is an average of 7619 S/cm with the highest up to 8797 S/cm which remarkably exceeds literature values of PEDOT nanostructures/thin films. Such distinct conductivity enhancement of single-crystal PEDOT nanowires can be attributed to improved carrier mobility in PEDOT nanowires. To demonstrate usefulness of single-crystal PEDOT nanowires, we fabricated an organic nanowire field-effect transistor array contacting the ultrahigh conductive PEDOT nanowires as metal electrodes.

Inkjet‐Assisted Nanotransfer Printing for Large‐Scale Integrated Nanopatterns of Various Single‐Crystal Organic Materials

Inkjet-assisted nanotransfer printing (inkjet-NTP) facilitates spatial control of many arrays of various organic functional materials on a single substrate with a high-throughput integration process, enabling monolithic integration of various organic nanopatterns. Inkjet-NTP enables wafer-scale organic electronic circuits composed of field-effect transistors, complementary inverters, and p-n diodes, demonstrating its capability to produce a high-performance, multifunctional organic chip.

Cross-Stacked Single-Crystal Organic Nanowire p−n Nanojunction Arrays by Nanotransfer Printing

We fabricated cross-stacked organic p-n nanojunction arrays made of single-crystal 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-PEN) and fullerene (C60) nanowires as p-type and n-type semiconductors, respectively, by using a nanotransfer printing technique. Single-crystal C60 nanowires were synthesized inside nanoscale channels of a mold and directly transferred onto a desired position of a flexible substrate by a lubricant liquid layer. In the consecutive printing process, single-crystal TIPS-PEN nanowires were grown in the same way and then perpendicularly aligned and placed onto the C60 nanowire arrays, resulting in a cross-stacked single-crystal organic p-n nanojunction array. The cross-stacked single-crystal TIPS-PEN/C60 nanowire p-n nanojunction devices show rectifying behavior with on/off ratio of ∼ 13 as well as photodiode characteristic with photogain of ∼ 2 under a light intensity of 12.2 mW/cm(2). Our study provides a facile, solution-processed approach to fabricate a large-area array of organic crystal nanojunction devices in a desired arrangement for future nanoscale electronics.

Heterogeneous Monolithic Integration of Single-Crystal Organic Materials

Manufacturing high-performance organic electronic circuits requires the effective heterogeneous integration of different nanoscale organic materials with uniform morphology and high crystallinity in a desired arrangement. In particular, the development of high-performance organic electronic and optoelectronic devices relies on high-quality single crystals that show optimal intrinsic charge-transport properties and electrical performance. Moreover, the heterogeneous integration of organic materials on a single substrate in a monolithic way is highly demanded for the production of fundamental organic electronic components as well as complex integrated circuits. Many of the various methods that have been designed to pattern multiple heterogeneous organic materials on a substrate and the heterogeneous integration of organic single crystals with their crystal growth are described here. Critical issues that have been encountered in the development of high-performance organic integrated electronics are also addressed.

Extremely High Barrier Performance of Organic–Inorganic Nanolaminated Thin Films for Organic Light-Emitting Diodes

This work presents a novel barrier thin film based on an organic-inorganic nanolaminate, which consists of alternating nanolayers of self-assembled organic layers (SAOLs) and Al2O3. The SAOLs-Al2O3 nanolaminated films were deposited using a combination of molecular layer deposition and atomic layer deposition techniques at 80 °C. Modulation of the relative thickness ratio of the SAOLs and Al2O3 enabled control over the elastic modulus and stress in the films. Furthermore, the SAOLs-Al2O3 thin film achieved a high degree of mechanical flexibility, excellent transmittance (>95%), and an ultralow water-vapor transmission rate (2.99 × 10-7 g m-2 day-1), which represents one of the lowest permeability levels ever achieved by thin film encapsulation. On the basis of its outstanding barrier properties with high flexibility and transparency, the nanolaminated film was applied to a commercial OLEDs panel as a gas-diffusion barrier film. The results showed defect propagation could be significantly inhibited by incorporating the SAOLs layers, which enhanced the durability of the panel.

Highly sensitive ammonia gas sensor based on single-crystal Poly(3-hexylthiophene) (P3HT) organic field effect transistor

A highly sensitive organic field-effect transistor (OFET)-based sensor for ammonia in the range of 0.01 to 25 ppm was developed. The sensor was fabricated by employing an array of single-crystal poly(3-hexylthiophene) (P3HT) nanowires as the organic semiconductor (OSC) layer of an OFET with a top-contact geometry. The electrical characteristics (field-effect mobility, on/off current ratio) of the single-crystal P3HT nanowire OFET were about 2 orders of magnitude larger than those of the P3HT thin film OFET with the same geometry. The P3HT nanowire OFET showed excellent sensitivity to ammonia, about 3 times higher than that of the P3HT thin film OFET at 25 ppm ammonia. The ammonia response of the OFET was reversible and was not affected by changes in relative humidity from 45 to 100%. The high ammonia sensitivity of the P3HT nanowire OFET is believed to result from the single crystal nature and high surface/volume ratio of the P3HT nanowire used in the OSC layer.

UV-enhanced atomic layer deposition of Al2O3 thin films at low temperature for gas-diffusion barriers

We present ultraviolet (UV) enhanced atomic layer deposition (ALD), UV-ALD, as a promising approach to deposit effective gas-diffusion barrier thin films. Highly dense, uniform, and conformal Al2O3 thin films were prepared by UV-ALD at 40 °C, suggesting that UV irradiation during the ALD process promotes the reactions to achieve an ideal ALD process even at low temperature. The water-diffusion barrier performance of the Al2O3 thin films was found to be significantly enhanced by the use of UV irradiation. The water vapor transmission rate of Al2O3 films grown by UV-ALD at 40 °C was estimated to be 9.20 × 10−7 g m−2 d−1 using a Ca conductance test, which is one of the lowest reported WVTR values among the ALD Al2O3 barrier thin films and satisfies the WVTR requirement of 10−6 g m−2 d−1. The WVTR measurements were also performed by MOCON testing using 10–100 nm thick Al2O3 thin films on PET substrates, also showing superior performance of the UV-ALD thin films to that of the thermal ALD film. All the UV-ALD films except the 10 nm-thick one show WVTR values below 1.00 × 10−3 g m−2 d−1, the detection limit of the MOCON instrument used.

Observation of Charge Separation and Space-Charge Region in Single-Crystal P3HT/C60 Heterojunction Nanowires.

We directly observed charge separation and a space-charge region in an organic single-crystal p-n heterojunction nanowire, by means of scanning photocurrent microscopy. The axial p-n heterojunction nanowire had a well-defined planar junction, consisted of P3HT (p-type) and C60 (n-type) single crystals and was fabricated by means of the recently developed inkjet-assisted nanotransfer printing technique. The depletion region formed at the p-n junction was directly observed by exploring the spatial distribution of photogenerated carriers along the heterojunction nanowire under various applied bias voltages. Our study provides a facile approach toward the precise characterization of charge transport in organic heterojunction systems as well as the design of efficient nanoscale organic optoelectronic devices.

Nanotransfer Printing: Inkjet-Assisted Nanotransfer Printing for Large-Scale Integrated Nanopatterns of Various Single-Crystal Organic Materials (Adv. Mater. 15/2016).

Inkjet-assisted nanotransfer printing, described by M. M. Sung and co-workers on page 2874, enables monolithic integration of crystalline nanowire arrays with a diverse range of organic materials. Droplets of different molecular ink solutions are transformed into single-crystal organic nanowires within nanoscale channels at selected locations in a nanoscale line-patterned mold. Patterned arrays of various functional nanowires within the mold are then printed directly onto a substrate through the liquid-bridge-mediated transfer process.