Jean François Veyan

Interaction of molecular hydrogen with microporous metal organic framework materials at room temperature.

Infrared (IR) absorption spectroscopy measurements, performed at 300 K and high pressures (27-55 bar) on several prototypes of metal organic framework (MOF) materials, reveal that the MOF ligands are weakly perturbed upon incorporation of guest molecules and that the molecular hydrogen (H(2)) stretch mode is red-shifted (30-40 cm(-1)) from its unperturbed value (4155 cm(-1) for ortho H(2)). For MOFs of the form M(bdc)(ted)(0.5) (bdc = 1,4-benzenedicarboxylate; ted = triethylenediamine), H(2) molecules interact with the organic ligands instead of the saturated metal centers located at the corners of the unit cell. First-principles van der Waals density functional calculations identify the binding sites and further show that the induced dipole associated with the trapped H(2) depends sensitively on these sites. For M(bdc)(ted)(0.5) systems, the strongest dipole moment is of the site that is in the corner of the unit cell and is dominated by the interaction with the benzene ligand and not by the metal center. For MOFs of the M(3)[HCOO](6) type with relatively short ligands (i.e., formate) and 1-D pore structures, there is a weak dependence of H(2) vibrational frequency on the cations, due to a small change in the unit cell dimension. Furthermore, translational states of approximately +/-100 cm(-1) are clearly observed as side bands on the H(2) stretch mode in these 1-D channels interconnected by very small apertures. The H(2) stretch IR integrated areas in all the MOFs considered in this work increase linearly with H(2) pressure, consistent with isotherm measurements performed in similar conditions. However, the IR intensity varies substantially, depending on the number of benzene rings interacting with the H(2) molecules. Finally, there is no correlation between H(2) binding energies (determined by isotherm measurements) and the magnitude of the H(2) stretch shift, indicating that IR shifts are dominated by the environment (organic ligand, metal center, and structure) rather than the strength of the interaction. These results highlight the relevance of IR spectroscopy to determine the type and arrangement of ligands in the structure of MOFs.

Interfacial Chemistry in Al/CuO Reactive Nanomaterial and Its Role in Exothermic Reaction

Interface layers between reactive and energetic materials in nanolaminates or nanoenergetic materials are believed to play a crucial role in the properties of nanoenergetic systems. Typically, in the case of Metastable Interstitial Composite nanolaminates, the interface layer between the metal and oxide controls the onset reaction temperature, reaction kinetics, and stability at low temperature. So far, the formation of these interfacial layers is not well understood for lack of in situ characterization, leading to a poor control of important properties. We have combined in situ infrared spectroscopy and ex situ X-ray photoelectron spectroscopy, differential scanning calorimetry, and high resolution transmission electron microscopy, in conjunction with first-principles calculations to identify the stable configurations that can occur at the interface and determine the kinetic barriers for their formation. We find that (i) an interface layer formed during physical deposition of aluminum is composed of a mixture of Cu, O, and Al through Al penetration into CuO and constitutes a poor diffusion barrier (i.e., with spurious exothermic reactions at lower temperature), and in contrast, (ii) atomic layer deposition (ALD) of alumina layers using trimethylaluminum (TMA) produces a conformal coating that effectively prevents Al diffusion even for ultrathin layer thicknesses (∼0.5 nm), resulting in better stability at low temperature and reduced reactivity. Importantly, the initial reaction of TMA with CuO leads to the extraction of oxygen from CuO to form an amorphous interfacial layer that is an important component for superior protection properties of the interface and is responsible for the high system stability. Thus, while Al e-beam evaporation and ALD growth of an alumina layer on CuO both lead to CuO reduction, the mechanism for oxygen removal is different, directly affecting the resistance to Al diffusion. This work reveals that it is the nature of the monolayer interface between CuO and alumina/Al rather than the thickness of the alumina layer that controls the kinetics of Al diffusion, underscoring the importance of the chemical bonding at the interface in these energetic materials.

Turning aluminium into a noble-metal-like catalyst for low-temperature activation of molecular hydrogen

Activation of molecular hydrogen is the first step in producing many important industrial chemicals that have so far required expensive noble-metal catalysts and thermal activation. We demonstrate here that aluminium doped with very small amounts of titanium can activate molecular hydrogen at temperatures as low as 90 K. Using an approach that uses CO as a probe molecule, we identify the atomistic arrangement of the catalytically active sites containing Ti on Al(111) surfaces, combining infrared reflection-absorption spectroscopy and first-principles modelling. CO molecules, selectively adsorbed on catalytically active sites, form a complex with activated hydrogen that is removed at remarkably low temperatures (115 K; possibly as a molecule). These results provide the first direct evidence that Ti-doped Al can carry out the essential first step of molecular hydrogen activation under nearly barrierless conditions, thereby challenging the monopoly of noble metals in hydrogen activation.

Formation and bonding of alane clusters on Al(111) surfaces studied by infrared absorption spectroscopy and theoretical modeling

Alanes are believed to be the mass transport intermediate in many hydrogen storage reactions and thus important for understanding rehydrogenation kinetics for alanates and AlH3. Combining density functional theory (DFT) and surface infrared (IR) spectroscopy, we provide atomistic details about the formation of alanes on the Al(111) surface, a model environment for the rehydrogenation reactions. At low coverage, DFT predicts a 2-fold bridge site adsorption for atomic hydrogen at 1150 cm(-1), which is too weak to be detected by IR but was previously observed in electron energy loss spectroscopy. At higher coverage, steps are the most favorable adsorption sites for atomic H adsorption, and it is likely that the AlH3 molecules form (initially strongly bound to steps) at saturation. With increasing exposures AlH3 is extracted from the step edge and becomes highly mobile on the terraces in a weakly bound state, accounting for step etching observed in previous STM studies. The mobility of these weakly bound AlH3 molecules is the key factor leading to the growth of larger alanes through AlH3 oligomerization. The subsequent decomposition and desorption of alanes is also investigated and compared to previous temperature programmed desorption studies.

Surface etching, chemical modification and characterization of silicon nitride and silicon oxide--selective functionalization of Si3N4 and SiO2.

The ability to selectively chemically functionalize silicon nitride (Si3N4) or silicon dioxide (SiO2) surfaces after cleaning would open interesting technological applications. In order to achieve this goal, the chemical composition of surfaces needs to be carefully characterized so that target chemical reactions can proceed on only one surface at a time. While wet-chemically cleaned silicon dioxide surfaces have been shown to be terminated with surficial Si-OH sites, chemical composition of the HF-etched silicon nitride surfaces is more controversial. In this work, we removed the native oxide under various aqueous HF-etching conditions and studied the chemical nature of the resulting Si3N4 surfaces using infrared absorption spectroscopy (IRAS), x-ray photoelectron spectroscopy (XPS), low energy ion scattering (LEIS), and contact angle measurements. We find that HF-etched silicon nitride surfaces are terminated by surficial Si-F and Si-OH bonds, with slightly subsurface Si-OH, Si-O-Si, and Si-NH2 groups. The concentration of surficial Si-F sites is not dependent on HF concentration, but the distribution of oxygen and Si-NH2 displays a weak dependence. The Si-OH groups of the etched nitride surface are shown to react in a similar manner to the Si-OH sites on SiO2, and therefore no selectivity was found. Chemical selectivity was, however, demonstrated by first reacting the -NH2 groups on the etched nitride surface with aldehyde molecules, which do not react with the Si-OH sites on a SiO2 surface, and then using trichloro-organosilanes for selective reaction only on the SiO2 surface (no reactivity on the aldehyde-terminated Si3N4 surface).

Trapping gases in metal-organic frameworks with a selective surface molecular barrier layer

The main challenge for gas storage and separation in nanoporous materials is that many molecules of interest adsorb too weakly to be effectively retained. Instead of synthetically modifying the internal surface structure of the entire bulk—as is typically done to enhance adsorption—here we show that post exposure of a prototypical porous metal-organic framework to ethylenediamine can effectively retain a variety of weakly adsorbing molecules (for example, CO, CO2, SO2, C2H4, NO) inside the materials by forming a monolayer-thick cap at the external surface of microcrystals. Furthermore, this capping mechanism, based on hydrogen bonding as explained by ab initio modelling, opens the door for potential selectivity. For example, water molecules are shown to disrupt the hydrogen-bonded amine network and diffuse through the cap without hindrance and fully displace/release the retained small molecules out of the metal-organic framework at room temperature. These findings may provide alternative strategies for gas storage, delivery and separation.

Multiscale modeling of interaction of alane clusters on Al"111… surfaces: A reactive force field and infrared absorption spectroscopy approach

We have used reactive force field (ReaxFF) to investigate the mechanism of interaction of alanes on Al(111) surface. Our simulations show that, on the Al(111) surface, alanes oligomerize into larger alanes. In addition, from our simulations, adsorption of atomic hydrogen on Al(111) surface leads to the formation of alanes via H-induced etching of aluminum atoms from the surface. The alanes then agglomerate at the step edges forming stringlike conformations. The identification of these stringlike intermediates as a precursor to the bulk hydride phase allows us to explain the loss of resolution in surface IR experiments with increasing hydrogen coverage on single crystal Al(111) surface. This is in excellent agreement with the experimental works of Go et al. [E. Go, K. Thuermer, and J. E. Reutt-Robey, Surf. Sci. 437, 377 (1999)]. The mobility of alanes molecules has been studied using molecular dynamics and it is found that the migration energy barrier of Al(2)H(6) is 2.99 kcal/mol while the prefactor is D(0)=2.82 x 10(-3) cm(2)/s. We further investigated the interaction between an alane and an aluminum vacancy using classical molecular dynamics simulations. We found that a vacancy acts as a trap for alane, and eventually fractionates/annihilates it. These results show that ReaxFF can be used, in conjunction with ab initio methods, to study complex reactions on surfaces at both ambient and elevated temperature conditions.

Morphology and chemical termination of HF-etched Si3N4 surfaces

Several reports on the chemical termination of silicon nitride films after HF etching, an important process in the microelectronics industry, are inconsistent claiming N-Hx, Si-H, or fluorine termination. An investigation combining infrared and x-ray photoelectron spectroscopies with atomic force and scanning electron microscopy imaging reveals that under some processing conditions, salt microcrystals are formed and stabilized on the surface, resulting from products of Si3N4 etching. Rinsing in deionized water immediately after HF etching for at least 30 s avoids such deposition and yields a smooth surface without evidence of Si-H termination. Instead, fluorine and oxygen are found to terminate a sizeable fraction of the surface in the form of Si-F and possibly Si-OH bonds. The relatively unique fluorine termination is remarkably stable in both air and water and could lead to further chemical functionalization pathways.

Ion induced electron emission from chemically cleaned Si and Ge

A compelling yet basic question regarding ion induced electron emission (IIEE) from semiconductors has never been experimentally investigated: Can a larger number of electrons in the conduction band (closer in energy to the vacuum level) cause a larger IIEE yield (γ)? The lack of fundamental measurements of γ under varying surface and sub-surface circumstances has left this question open to speculation. Recent measurements related to IIEE from semiconductors have suggested that deep sub-surface conditions may in fact lead to significant variations in γ. In this work, the IIEE yields of chemically cleaned silicon and germanium bombarded with a variety of noble gas ions have been measured at energies between 25 and 300 eV. Our measurements indicate that while the IIEE yields depend strongly on the ion being tested (due to the ions potential energy) they do not increase with increasing conduction band electron density. These measurements are consistent with the assumption made in the most widely accepted theory for IIEE, and with our extension of this theory to incorporate conduction band electrons.