Jean-Paul Adam

Interfacial Dzyaloshinskii-Moriya interaction in perpendicularly-magnetized Pt/Co/AlO

Spin waves in perpendicularly magnetized

_x

{\text{Pt/Co/AlO}}_{x}/\text{Pt}

ultrathin films measured by Brillouin light spectroscopy

ultrathin films with varying Co thicknesses (0.6--1.2 nm) have been studied with Brillouin light spectroscopy in the Damon-Eshbach geometry. The measurements reveal a pronounced nonreciprocal propagation, which increases with decreasing Co thickness. This nonreciprocity, attributed to an interfacial Dzyaloshinskii-Moriya interaction (DMI), is significantly stronger than asymmetries resulting from surface anisotropies for such modes. Results are consistent with an interfacial DMI constant

Damping of CoxFe80−xB20 ultrathin films with perpendicular magnetic anisotropy

{D}_{\mathrm{s}}=\ensuremath{-}1.7\ifmmode\pm\else\textpm\fi{}0.11\phantom{\rule{0.28em}{0ex}}\text{pJ}

Nanoscale imaging and control of domain-wall hopping with a nitrogen-vacancy center microscope

/m, which favors left-handed chiral spin structures. This suggests that such films below 1 nm in thickness should support chiral states such as skyrmions at room temperature.

The nature of domain walls in ultrathin ferromagnets revealed by scanning nanomagnetometry.

We use vector network analyzer ferromagnetic resonance to study the perpendicularly magnetized CoFeB films. We report the dependence of the anisotropy, the g-factor, and the damping upon the Fe-Co compositional ratio in the amorphous and crystalline states. The damping and the anisotropy increase upon crystallization but vary little with composition on the Fe-rich side. At high cobalt content, the anisotropy lowers while the damping and the sample inhomogeneity increase. The compositional dependences seem to extrapolate from the properties of bulk CoFe alloys, with differences that can be understood from the correlated impacts of spin-orbit interaction on anisotropy, g-factor, and damping.

Low depinning fields in Ta-CoFeB-MgO ultrathin films with perpendicular magnetic anisotropy

Observing jumping domain walls Domain walls, which separate regions of opposite magnetization in a ferromagnet, have rich dynamics that are difficult to characterize in small samples. Tetienne et al. imaged the magnetization of a thin ferromagnetic wire and observed the jumping of a domain wall between different positions along the wire. They used a scanning magnetic microscope based on a defect in diamond. The laser light needed to operate the microscope also enabled the control of the domain wall motion by causing local heating, which made the illuminated position more likely to contain a domain wall. Science, this issue p. 1366 A microscope based on a single spin of a diamond defect is used to observe magnetism dynamics. The control of domain walls in magnetic wires underpins an emerging class of spintronic devices. Propagation of these walls in imperfect media requires defects that pin them to be characterized on the nanoscale. Using a magnetic microscope based on a single nitrogen-vacancy (NV) center in diamond, we report domain-wall imaging on a 1-nanometer-thick ferromagnetic nanowire and directly observe Barkhausen jumps between two pinning sites spaced 50 nanometers apart. We further demonstrate in situ laser control of these jumps, which allows us to drag the domain wall along the wire and map the pinning landscape. Our work demonstrates the potential of NV microscopy to study magnetic nano-objects in complex media, whereas controlling domain walls with laser light may find an application in spintronic devices.

Controlling magnetic domain wall motion in the creep regime in He+-irradiated CoFeB/MgO films with perpendicular anisotropy

The capacity to propagate magnetic domain walls with spin-polarized currents underpins several schemes for information storage and processing using spintronic devices. A key question involves the internal structure of the domain walls, which governs their response to certain current-driven torques such as the spin Hall effect. Here we show that magnetic microscopy based on a single nitrogen-vacancy defect in diamond can provide a direct determination of the internal wall structure in ultrathin ferromagnetic films under ambient conditions. We find pure Bloch walls in Ta/CoFeB(1 nm)/MgO, while left-handed Néel walls are observed in Pt/Co(0.6 nm)/AlOx. The latter indicates the presence of a sizable interfacial Dzyaloshinskii-Moriya interaction, which has strong bearing on the feasibility of exploiting novel chiral states such as skyrmions for information technologies.

Direct measurement of interfacial Dzyaloshinskii-Moriya interaction in X vertical bar CoFeB vertical bar MgO heterostructures with a scanning NV magnetometer (X=Ta, TaN, and W)

We have studied the domain-wall dynamics in Ta-CoFeB-MgO ultra-thin films with perpendicular magnetic anisotropy for various Co and Fe concentrations in both the amorphous and crystalline states. We observe three motion regimes with increasing magnetic field, which are consistent with a low fields creep, transitory depinning, and high fields Walker wall motion. The depinning fields are found to be as low as 2 mT, which is significantly lower than the values typically observed in 3d ferromagnetic metal films with perpendicular magnetic anisotropy. This work highlights a path toward advanced spintronics devices based on weak random pinning in perpendicular CoFeB films.

Modified current-induced domain-wall motion in GaMnAs nanowires

This study presents the effective tuning of perpendicular magnetic anisotropy in CoFeB/MgO thin films by He+ ion irradiation and its effect on domain wall motion in a low field regime. Magnetic anisotropy and saturation magnetisation are found to decrease as a function of the irradiation dose which can be related to the observed irradiation-induced changes in stoichiometry at the CoFeB/MgO interface. These changes in the magnetic intrinsic properties of the film are reflected in the domain wall dynamics at low magnetic fields (H) where irradiation is found to induce a significant decrease in domain wall velocity (v). For all irradiation doses, domain wall velocities at low fields are well described by a creep law, where Ln(v) vs. H−1∕4 behaves linearly, up to a maximum field H*, which has been considered as an approximation to the value of the depinning field Hdep. In turn, H* ≈ Hdep is seen to increase as a function of the irradiation dose, indicating an irradiation-induced extension of the creep regime ...