Jeffrey J. Spiegelman

Enabling low temperature Metal Nitride ALD using ultra-high purity hydrazine

A novel hydrazine vaporization source has been developed in response to the emerging need for sub-400°C metal nitride deposition. Hydrazine has been demonstrated to be a viable precursor to enable low temperature atomic layer deposition (ALD). Initial results indicate that purification leads to TiNx films without added oxygen.

Enabling low temperature metal nitride ALD using ultra-high purity hydrazine: ET/ID: Enabling technologies and innovative devices

A novel hydrazine vaporization source has been developed in response to the emerging need for sub-400°C metal nitride deposition. Hydrazine has been demonstrated to be a viable precursor to enable low temperature atomic layer deposition (ALD). Initial results indicate that purification leads to TiN x films without added oxygen.

Surface Passivation of New Channel Materials Utilizing Hydrogen Peroxide and Hydrazine Gas

In Situ gas phase passivation methods can enable new channel materials. Toward this end pure anhydrous HOOH and H2NNH2 membrane gas delivery methods were developed. Implementation led to Si-OH passivation of InGaAs(001) at 350C and Si-N-H passivation of SiGe(110) at 285C. XPS and initial electrical characterization has been carried out. Feasibility for In Situ dry surface preparation and passivation was demonstrated.

Improved uniformity for thin oxides when using wet thermal oxidation

Wet thermal oxidation is an accepted process for generating thick oxide films but is not commonly used for thin oxide films due to issues with film uniformity. For high wafer loading and oxide thicknesses at and below 1000Å, dry oxidation has been the process of choice. A new wet oxidation method using high flow rates of steam and oxygen has now been shown to achieve uniformity better than 2% load to load and reduce oxidation time by 87%. These results were achieved in tests on large wafers (300 mm), demonstrating improved economies within uniformity tolerances.

Contaminant dry-down rates in photolithography purge gases

Adsorption and desorption rates of a 6-component hydrocarbon mixture and SO2 have been studied on the surfaces of Ultra High Purity (UHP) components under the presence of parts-per-billion (ppb) contaminant levels. The dry-down rates are monitored to sub parts-per-trillion (ppt) levels. In the hydrocarbon test, stainless steel components are confirmed to be more effective than Teflon during dry-down. Dry-down rates for hydrocarbons on stainless steel (SS) surfaces depend on the molecular weight of the contaminant; heavier molecules take longer to dry-down. The dry-down study for SO2 revealed that it will desorb from Teflon surfaces quicker than it will desorb from stainless steel. The result of UHP valves tested for outgassing indicates that Extreme Clean Dry Air (XCDA) was able to remove hydrocarbons to lower levels and cleanup faster than with a N2 purge.