Jennifer D. Sloppy

Thickness-dependent crossover from charge- to strain-mediated magnetoelectric coupling in ferromagnetic/piezoelectric oxide heterostructures.

Magnetoelectric oxide heterostructures are proposed active layers for spintronic memory and logic devices, where information is conveyed through spin transport in the solid state. Incomplete theories of the coupling between local strain, charge, and magnetic order have limited their deployment into new information and communication technologies. In this study, we report direct, local measurements of strain- and charge-mediated magnetization changes in the La0.7Sr0.3MnO3/PbZr0.2Ti0.8O3 system using spatially resolved characterization techniques in both real and reciprocal space. Polarized neutron reflectometry reveals a graded magnetization that results from both local structural distortions and interfacial screening of bound surface charge from the adjacent ferroelectric. Density functional theory calculations support the experimental observation that strain locally suppresses the magnetization through a change in the Mn-eg orbital polarization. We suggest that this local coupling and magnetization suppression may be tuned by controlling the manganite and ferroelectric layer thicknesses, with direct implications for device applications.

LaAlO 3 /SrTiO 3 Epitaxial Heterostructures by Atomic Layer Deposition

Thin films of LaAlO3 were deposited on TiO2-terminated (100) SrTiO3 crystals by atomic layer deposition (ALD), using tris(iso-propylcyclopentadienyl)lanthanum and trimethyl aluminum precursors. Water was used as the oxidizer. The film composition was shown to be controlled by the ratio of La/Al precursor pulses during ALD, with near-stoichiometric LaAlO3 resulting at precursor pulse ratios of 4/1 to 5/1. Films near the stoichiometric LaAlO3 composition were shown to crystallize on subsequent annealing to form epitaxial LaAlO3/SrTiO3 heterostructures. Electrical characterization of these structures was done by two-terminal direct-current (DC) current–voltage scans at room temperature and under high-vacuum conditions. The results show electrical conductivity for the ALD-deposited epitaxial LaAlO3/SrTiO3 heterostructures, which turns on for thickness above four unit cells for the LaAlO3 film.

A study of the effect of iron island morphology and interface oxidation on the magnetic hysteresis of Fe-MgO (001) thin film composites

Fe-MgO tunnel junctions have received much attention for their use in hard drive read heads and other spintronic applications. The system is particularly interesting because of its magnetoresistive behavior and the abundance and low cost of its constituent elements. However, many questions remain about how the structure and chemistry of the Fe-MgO interface mediates magnetic behavior. In this study, we report on transmission electron microscopy, electron energy loss spectroscopy, and magnetic characterization of Fe-MgO composite films with various morphologies. We explore relationships between film morphology, intermixing, and the resulting effects on magnetic structure. We find the presence of oxidation at the Fe-MgO interface, with a detrimental impact on the saturation magnetization of the composite. We also observe changes in coercivity and magnetocrystalline anisotropy with film morphology and thickness. These results will inform the design of MgO-based tunnel junctions and improve our understanding ...

Atomic-Scale Characterization of Oxide Thin Films Gated by Ionic Liquid

Ionic liquids (ILs) have received considerable interest for use in electrostatic gating in complex oxide systems. Understanding the ionic liquid/oxide interface, and any bias-induced electrochemical degradation, is critical for the interpretation of transport phenomena. The integrity of the interface between ionic liquid 1-ethyl-3-methylimidazolium hexafluorophosphate and La1/3Sr2/3FeO3 under various biasing conditions was examined by analytical transmission electron microscopy, and we report film degradation in the form of an irreversible chemical reaction regardless of the applied bias. This results in an intermixing region of 4-6 nm at the IL/oxide interface. Electron energy loss spectroscopy shows La and Fe migration into the ionic liquid, resulting in secondary phase formation under negative bias. Our approach can be extended to other ionic liquid/oxide systems in order to better understand the electrochemical stability window of these device structures.

Epitaxial strain and its relaxation at the LaAlO3/SrTiO3 interface

A series of LaAlO3 thin films with different thicknesses were deposited by pulsed laser deposition at temperatures from 720 °C to 800 °C. The results from grazing incidence x-ray diffraction and reciprocal space mapping indicate that a thin layer of LaAlO3 adjacent to the SrTiO3 substrate remains almost coherently strained to the substrate, while the top layer starts to relax quickly above a certain critical thickness, followed by a gradual relaxation at larger film thickness when they are grown at lower temperatures. The atomic force microscopy results show that the fast relaxation is accompanied by the formation of cracks on the film surface. This can be ascribed to the larger energy release rate when compared with the resistance of LaAlO3 to cracking, according to calculations from the Griffith fracture theory. For films grown at 720 °C, a drop in sheet resistance by two orders of magnitude is observed when the top layer starts to relax, indicating a relationship between the strain and the conductivity of the two-dimensional electron gas at the LaAlO3/SrTiO3 interface. The strain engineered by growth temperature provides a useful tool for the manipulation of the electronic properties of oxide heterointerfaces.

Enhancement of lower critical field by reducing the thickness of epitaxial and polycrystalline MgB2 thin films

For potential applications in superconducting RF cavities, we have investigated the properties of polycrystalline MgB2films, including the thickness dependence of the lower critical fieldHc1. MgB2thin films were fabricated by hybrid physical-chemical vapor deposition on (0001) SiC substrate either directly (for epitaxialfilms) or with a MgO buffer layer (for polycrystalline films). When the film thickness decreased from 300 nm to 100 nm, Hc1 at 5 K increased from around 600 Oe to 1880 Oe in epitaxialfilms and to 1520 Oe in polycrystalline films. The result is promising for using MgB2/MgO multilayers to enhance the vortex penetration field.