Jeong O. Lee

Chemically exfoliated transition metal dichalcogenide nanosheet-based wearable thermoelectric generators

To utilize human heat energy as a permanent power source, we demonstrate, for the first time, an intrinsically highly foldable and stretchable thermoelectric generator that is based upon chemically exfoliated 1T-transition metal dichalcogenide (TMDC) nanosheets (NSs) for self-powered wearable electronics. The power factors of WS2 (n-type) and NbSe2 (p-type) NS films were evaluated to be 5–7 μ K−2 m−1 and 26–34 μW K−2 m−1, respectively, near room temperature. With these films, parallel-connected thermoelectric generators that were fabricated were able to constantly produce up to 38 nW of output power at Δ60 K. The thermoelectric device stably sustained its performance, even after 100 bending cycles and after 100 stretching cycles (50% strain). By direct observation, we found that the film is highly stretched by partial tearing and folding but still maintains an electrical percolation pathway. The morphology then is quickly recovered by a plug-in contact between the torn parts as the external strain is released. Finally, we demonstrate the electric power generation from a prototype wearable thermoelectric generator that was woven into a wristband fitted on a real human body.

Drawing Circuits with Carbon Nanotubes: Scratch-Induced Graphoepitaxial Growth of Carbon Nanotubes on Amorphous Silicon Oxide Substrates

Controlling the orientations of nanomaterials on arbitrary substrates is crucial for the development of practical applications based on such materials. The aligned epitaxial growth of single-walled carbon nanotubes (SWNTs) on specific crystallographic planes in single crystalline sapphire or quartz has been demonstrated; however, these substrates are unsuitable for large scale electronic device applications and tend to be quite expensive. Here, we report a scalable method based on graphoepitaxy for the aligned growth of SWNTs on conventional SiO2/Si substrates. The “scratches” generated by polishing were found to feature altered atomic organizations that are similar to the atomic alignments found in vicinal crystalline substrates. The linear and circular scratch lines could promote the oriented growth of SWNTs through the chemical interactions between the C atoms in SWNT and the Si adatoms in the scratches. The method presented has the potential to be used to prepare complex geometrical patterns of SWNTs by ‘drawing circuits using SWNTs without the need for state-of-the-art equipment or complicated lithographic processes.

Resolving microscopic interfaces in Si1−xGex alloy nanowire devices

We have fabricated Si(1-x)Ge(x) alloy nanowire devices with Ni and Ni/Au electrodes. The electrical transport characteristics of the alloy nanowires depended strongly on the annealing temperature and contact metals. Ni/Au-contacted devices annealed at 400 degrees C showed p-type transistor behavior as well as a resistance switching effect, while no switching was observed from Ni-contacted alloy nanowire devices. To identify the origin of such a hysteretic resistance switching effect, we constructed nanowire devices on a 40 nm Si(3)N(4) membrane. Transmission electron microscopy analysis combined with electrical transport measurements revealed that devices contacted with Ni/Au, and thereby showing resistance switching, have Au atoms right next to the alloy nanowire.

Designing the Carbon Nanotube Field Effect Transistor Through Contact Barrier Engineering

Through recent publications, as reviewed in this article, we have determined the effects of contact barrier change on the electrical transport properties of carbon nanotube field-effect transistors. To analyze the Fermi level alignment and the Schottky barrier at the contact, we used the first-principles electronic structure calculations of different types of metal electrodes with various bonding configurations. In parallel, we have used various experimental techniques to engineer the contact barrier: decorations of metal nanoparticles, the self-assembled monolayers of molecules, and protein nanoparticles. We investigated the changes in the electron transport properties of the nanotube transistors in relation to the adjustment of the contact barrier. Overall reviews of these studies are presented here, and a few potential applications are also suggested.