Jeongho Park

Prominent quasiparticle peak in the photoemission spectrum of the metallic phase of V2O3.

We present the first observation of a prominent quasiparticle peak in the photoemission spectrum of the metallic phase of V2O3 and report new spectral calculations that combine the local-density approximation with the dynamical mean-field theory (using quantum Monte Carlo simulations) to show the development of such a distinct peak with decreasing temperature. The experimental peak width and weight are significantly larger than in the theory.

Observation of the intrinsic bandgap behaviour in as-grown epitaxial twisted graphene.

Twisted graphene is of particular interest due to several intriguing characteristics, such as its the Fermi velocity, van Hove singularities and electronic localization. Theoretical studies recently suggested the possible bandgap opening and tuning. Here, we report a novel approach to producing epitaxial twisted graphene on SiC (0001) and the observation of its intrinsic bandgap behaviour. The direct deposition of C60 on pre-grown graphene layers results in few-layer twisted graphene confirmed by angular resolved photoemission spectroscopy and Raman analysis. The strong enhanced G band in Raman and sp(3) bonding characteristic in X-ray photoemission spectroscopy suggests the existence of interlayer interaction between adjacent graphene layers. The interlayer spacing between graphene layers measured by transmission electron microscopy is 0.352 ± 0.012 nm. Thermal activation behaviour and nonlinear current-voltage characteristics conclude that an intrinsic bandgap is opened in twisted graphene. Low sheet resistance (~ 160 Ω □(-1) at 10 K) and high mobility (~2,000 cm(2) V(-1) s(-1) at 10 K) are observed.

Band gap formation in graphene by in-situ doping

We report the formation of band gaps in as-grown stacks of epitaxial graphene with opposite doping. Control of in-situ doping during carbon source molecular beam epitaxy growth on SiC was achieved by using different carbon sources. Doping heterostructures were grown by stacking n-type material from a C60 source on p-type material from a graphite filament source. Activation energies for the resistivity and carrier concentration indicated band gaps up to 200 meV. A photoconductivity threshold was observed in the range of the electrical activation energies. Band gap formation is attributed to electric fields induced by spatially separated ionized dopants of opposite charge.

Filling of the mott-hubbard gap in the high temperature photoemission spectrum of (V0.972Cr0.028)2O3.

Photoemission spectra of the paramagnetic insulating phase of (V0.972Cr0.028)2O3, taken in ultrahigh vacuum up to the unusually high temperature (T) of 800 K, reveal a property unique to the Mott-Hubbard (MH) insulator that has not been observed previously. With increasing T the MH gap is filled by spectral weight transfer, in qualitative agreement with high-T theoretical calculations combining dynamical mean field theory and band theory in the local density approximation.

Approach to multifunctional device platform with epitaxial graphene on transition metal oxide

Heterostructures consisting of two-dimensional materials have shown new physical phenomena, novel electronic and optical properties, and new device concepts not observed in bulk material systems or purely three dimensional heterostructures. These new effects originated mostly from the van der Waals interaction between the different layers. Here we report that a new optical and electronic device platform can be provided by heterostructures of 2D graphene with a metal oxide (TiO2). Our novel direct synthesis of graphene/TiO2 heterostructure is achieved by C60 deposition on transition Ti metal surface using a molecular beam epitaxy approach and O2 intercalation method, which is compatible with wafer scale growth of heterostructures. As-grown heterostructures exhibit inherent photosensitivity in the visible light spectrum with high photo responsivity. The photo sensitivity is 25 times higher than that of reported graphene photo detectors. The improved responsivity is attributed to optical transitions between O 2p orbitals in the valence band of TiO2 and C 2p orbitals in the conduction band of graphene enabled by Coulomb interactions at the interface. In addition, this heterostructure provides a platform for realization of bottom gated graphene field effect devices with graphene and TiO2 playing the roles of channel and gate dielectric layers, respectively.

Effect of in-situ oxygen on the electronic properties of graphene grown by carbon molecular beam epitaxy

We report that graphene grown by molecular beam epitaxy from solid carbon (CMBE) on (0001) SiC in the presence of unintentional oxygen exhibits a small bandgap on the order of tens of meV. The presence of bandgaps is confirmed by temperature dependent Hall effect and resistivity measurements. X-ray photoelectron spectroscopy (XPS) measurements suggest that oxygen incorporates into the SiC substrate in the form of O-Si-C and not into the graphene as graphene oxide or some other species. The effect is independent of the carrier type of the graphene. Temperature dependent transport measurements show the presence of hopping conduction in the resistivity and a concurrent disappearance of the Hall voltage. Interactions between the graphene layers and the oxidized substrate are believed to be responsible for the bandgap.

Growth of carbon-based nanostructures

Carbon nanostructures such as carbon nanotubes (CNTs) and graphene are being applied to a wide variety of sensor applications. Both CNTs and graphene can be grown by chemical vapor deposition (CVD) from hydrocarbons using catalysts. Both materials require metallic catalysts. CNTs require small particles while graphene requires continuous films. Both materials can be grown by the thermal decomposition of SiC. Under the proper conditions either vertically aligned CNT arrays or planar graphene can be grown. Carbon source molecular beam epitaxy (CMBE) is also under development for growth of graphene. Like SiC decomposition, CMBE is catalyst free but it is not restricted to SiC substrates.