Jérémie Drevillon

Near-field heat transfer mediated by surface wave hybridization between two films

Using the general formalism of the fluctuational electrodynamics we extend the classical theory of near-field heat transfer between massive materials to any couple of films. An analytic expression for the net flux exchanged between two films in nonequilibrium thermal situation is derived. We show that the finite size effects and specifically hybridization of nondegenerated surface modes throughout the intrafilm cavity radically change the features of noncontact heat exchanges. This result should have important implications in the study of near-field heat transport between nanostructured materials.

Quantum thermal transistor

We demonstrate that a thermal transistor can be made up with a quantum system of three interacting subsystems, coupled to a thermal reservoir each. This thermal transistor is analogous to an electronic bipolar one with the ability to control the thermal currents at the collector and at the emitter with the imposed thermal current at the base. This is achieved by determining the heat fluxes by means of the strong-coupling formalism. For the case of three interacting spins, in which one of them is coupled to the other two, that are not directly coupled, it is shown that high amplification can be obtained in a wide range of energy parameters and temperatures. The proposed quantum transistor could, in principle, be used to develop devices such as a thermal modulator and a thermal amplifier in nanosystems.

Simple far-field radiative thermal rectifier using Fabry–Perot cavities based infrared selective emitters

We present a thermal rectification device concept based on far-field radiative exchange between two selective emitters. Rectification is achieved due to the fact that one of the selective emitters radiative properties are independent on temperature whereas the other emitter properties are strongly temperature dependent. A simple device constituted by two multilayer samples made of metallic (Au) and semiconductor (Si and HDSi) thin films is proposed. This device shows a rectification up to 70% with a temperature difference \Delta T = 200 K, a rectification ratio that has never been achieved so far with radiation-based rectifiers. Further optimization would allow larger rectification values. Presented results might be useful for energy conversion devices, smart radiative coolers / insulators engineering and thermal modulators development.

Selective emitters design and optimization for thermophotovoltaic applications

Among several solutions to exploit solar energy, thermophotovoltaics have been popularized and have known great breakthroughs during the past two decades. Yet, existing systems still have low efficiencies since the wavelength range of optimal photovoltaic (PV) conversion is very small compared to the emitter spectral range. Selective emitters are a very promising solution to this problem. We developed numerical tools to design and optimize such emitters. Some of the resulting structures composed of two or four layers of metals and semiconductors are presented in this paper. We also show that the usual PV devices efficiency limits (30% for crystalline silicon under solar radiation, according to Shockley-Queisser model) can be easily overcome thanks to these structures.

Modulation and amplification of radiative far field heat transfer: Towards a simple radiative thermal transistor

We show in this article that phase change materials (PCM) exhibiting a phase transition between a dielectric state and a metallic state are good candidates to perform modulation as well as amplification of radiative thermal flux. We propose a simple situation in plane parallel geometry where a so-called radiative thermal transistor could be achieved. In this configuration, we put a PCM between two blackbodies at different temperatures. We show that the transistor effect can be achieved easily when this material has its critical temperature between the two blackbody temperatures. We also see, that the more the material is reflective in the metallic state, the more switching effect is realized whereas the more PCM transition is stiff in temperature, the more thermal amplification is high. We finally take the example of VO2 that exhibits an insulator-metallic transition at 68{\textdegree}C. We show that a demonstrator of a radiative transistor could easily be achieved in view of the heat flux levels predicted. Far-field thermal radiation experiments are proposed to back the results presented.

Tailoring the local density of states of nonradiative field at the surface of nanolayered materials

The ability to artificially grow in a controllable manner at nanoscale, from modern deposition techniques, complex structural configurations made with metallic, polar, and semiconductor materials raises today the issue of the “best” achievable inner structure to tailor the near-field properties of a nanostructured medium. In the present work we make a step toward the rational design of these materials by reporting numerical experimentations demonstrating the possibility of identifying structural configurations of layered metallodielectric media specifically designed to control the electromagnetic density of states in the close vicinity of their surface. These results could find broad applications in near-field technologies.

Far field coherent thermal emission from a bilayer structure

Recent years, there has been an increased interest in the conception of micro/nanostructures with unusual radiative properties, far away from those of blackbody, especially thermal sources with temporal and/or spatial coherent emission. Such structures are indeed extremely interesting for energy conversion systems, radiative cooling devices, etc. The present study numerically investigates temporal coherent emission from a very simple structure composed of one layer of germanium and one of silicon carbide. Our investigation shows that, for well-defined thicknesses, this two-layer structure is able to emit in narrow spectral peak.

Radiative thermal rectification using superconducting materials

Thermal rectification can be defined as an asymmetry in the heat flux when the temperature difference between two interacting thermal reservoirs is reversed. In this Letter, we present a far-field radiative thermal rectifier based on high-temperature superconducting materials with a rectification ratio up to 80%. This value is among the highest reported in literature. Two configurations are examined: a superconductor (Tl2Ba2CaCu2O8) exchanging heat with (1) a black body and (2) another superconductor, YBa2Cu3O7 in this case. The first configuration shows a higher maximal rectification ratio. Besides, we show that the two-superconductor rectifier exhibits different rectification regimes depending on the choice of the reference temperature, i.e., the temperature of the thermostat. Presented results might be useful for energy conversion devices, efficient cryogenic radiative insulators engineering, and thermal logical circuits’ development.

Radiative Thermal Rectification between SiC and SiO2

By means of fluctuational electrodynamics, we calculate radiative heat flux between two planar materials respectively made of SiC and SiO2. More specifically, we focus on a first (direct) situation where one of the two materials (for example SiC) is at ambient temperature whereas the second material is at a higher one, then we study a second (reverse) situation where the material temperatures are inverted. When the two fluxes corresponding to the two situations are different, the materials are said to exhibit thermal rectification, a property with potential applications in thermal regulation. Rectification variations with temperature and separation distance are reported here. Calculations are performed using material optical data experimentally determined by Fourier transform emission spectrometry of heated materials between ambient temperature (around 300 K) and 1480 K. It is shown that rectification is much more important in the near-field domain, i.e. at separation distances smaller than the thermal wavelength. In addition, we see that the larger is the temperature difference, the larger is rectification. Large rectification is finally interpreted due to a weakening of the SiC surface polariton when temperature increases, a weakening which affects much less SiO2 resonances.

Optimized thermal amplification in a radiative transistor

The thermal performance of a far-field radiative transistor made up of a VO2 base in between a blackbody collector and a blackbody emitter is theoretically studied and optimized. This is done by using the grey approximation on the emissivity of VO2 and deriving analytical expressions for the involved heat fluxes and transistor amplification factor. It is shown that this amplification factor can be maximized by tuning the base temperature close to its critical one, which is determined by the temperature derivative of the VO2 emissivity and the equilibrium temperatures of the collector and emitter. This maximization is the result of the presence of two bi-stable temperatures appearing during the heating and cooling processes of the VO2 base and enables a thermal switching (temperature jump) characterized by a sizeable variation of the collector-to-base and base-to-emitter heat fluxes associated with a slight change of the applied power to the base. This switching effect leads to the optimization of the ampl...