Younès Ezzahri

Microscale and Nanoscale Thermal Characterization Techniques

In this paper the authors review various microscale and nanoscale thermal characterization techniques that could be applied to active and passive devices. Solid-state micro refrigerators on a chip can provide a uniform and localized temperature profile and they are used as a test vehicle in order to compare the resolution limits of various microscale techniques. After a brief introduction to conventional micro thermocouples and thermistor sensors, various contact and contactless techniques will be reviewed. Infrared microscopy is based on thermal emission and it is a convenient technique that could be used with features tens of microns in size. Resolution limits due to low emissivity and transparency of various materials and issues related to background radiation will be discussed. Liquid crystals that change color due to phase transition have been widely used for hot spot identification in integrated circuit chips. The main problems are related to calibration and aging of the material. Micro Raman is an optical method that can be used to measure absolute temperature. Micron spatial resolution with several degrees temperature resolution has been achieved. Thermoreflectance technique is based on the change of the sample reflection coefficient as a function of temperature. This small change in 10-4-10-5 range per degree is typically detected using lock-in technique when the temperature of the device is cycled. Use of visible and near IR wavelength allows both top surface and through the substrate measurement. Both single point measurements using a scanning laser and imaging with CCD or specialized lock-in cameras have been demonstrated. For ultrafast thermal decay measurement, pump-probe technique using nanosecond or femtosecond lasers have been demonstrated. This is typically used to measure thin film thermal diffusivity and thermal interface resistance. The spatial resolution of various optical techniques can be improved with the use of tapered fibers and near field scanning microscopy. While sub diffraction limit structures have been detected, strong attenuation of the signal reduces the temperature resolution significantly. Scanning thermal microscopy which is based on nanoscale thermocouples at the tip of atomic force microscope has had success in ultra high spatial resolution thermal mapping. Issues related to thermal resistance between the tip and the sample and parasitic heat transfer paths will be discussed

Quantum thermal transistor

We demonstrate that a thermal transistor can be made up with a quantum system of three interacting subsystems, coupled to a thermal reservoir each. This thermal transistor is analogous to an electronic bipolar one with the ability to control the thermal currents at the collector and at the emitter with the imposed thermal current at the base. This is achieved by determining the heat fluxes by means of the strong-coupling formalism. For the case of three interacting spins, in which one of them is coupled to the other two, that are not directly coupled, it is shown that high amplification can be obtained in a wide range of energy parameters and temperatures. The proposed quantum transistor could, in principle, be used to develop devices such as a thermal modulator and a thermal amplifier in nanosystems.

A comparison of thin film microrefrigerators based on Si/SiGe superlattice and bulk SiGe

Most of the conventional thermal management techniques can be used to cool the whole chip. Since thermal design requirements are mostly driven by the peak temperatures, reducing or eliminating hot spots could alleviate the design requirements for the whole package. Monolithic solid-state microcoolers offer an attractive way to eliminate hot spots. In this paper, we review theoretical and experimental cooling performance of silicon-based microrefrigerators on a chip. Both Si/SiGe superlattice and also bulk SiGe thin film devices have been fabricated and characterized. Direct measurement of the cooling along with material characterization allows us to extract the key factors limiting the performance of these microrefrigerators. Although Si/SiGe superlattice has larger thermoelectric power factor, the maximum cooling of thin film refrigerators based on SiGe alloys are comparable to that of superlattices. This is due to the fact that the superlattice thermal conductivity is larger than bulk SiGe alloy by about 30%.

Simple far-field radiative thermal rectifier using Fabry–Perot cavities based infrared selective emitters

We present a thermal rectification device concept based on far-field radiative exchange between two selective emitters. Rectification is achieved due to the fact that one of the selective emitters radiative properties are independent on temperature whereas the other emitter properties are strongly temperature dependent. A simple device constituted by two multilayer samples made of metallic (Au) and semiconductor (Si and HDSi) thin films is proposed. This device shows a rectification up to 70% with a temperature difference \Delta T = 200 K, a rectification ratio that has never been achieved so far with radiation-based rectifiers. Further optimization would allow larger rectification values. Presented results might be useful for energy conversion devices, smart radiative coolers / insulators engineering and thermal modulators development.

Modulation and amplification of radiative far field heat transfer: Towards a simple radiative thermal transistor

We show in this article that phase change materials (PCM) exhibiting a phase transition between a dielectric state and a metallic state are good candidates to perform modulation as well as amplification of radiative thermal flux. We propose a simple situation in plane parallel geometry where a so-called radiative thermal transistor could be achieved. In this configuration, we put a PCM between two blackbodies at different temperatures. We show that the transistor effect can be achieved easily when this material has its critical temperature between the two blackbody temperatures. We also see, that the more the material is reflective in the metallic state, the more switching effect is realized whereas the more PCM transition is stiff in temperature, the more thermal amplification is high. We finally take the example of VO2 that exhibits an insulator-metallic transition at 68{\textdegree}C. We show that a demonstrator of a radiative transistor could easily be achieved in view of the heat flux levels predicted. Far-field thermal radiation experiments are proposed to back the results presented.

Radiative thermal rectification using superconducting materials

Thermal rectification can be defined as an asymmetry in the heat flux when the temperature difference between two interacting thermal reservoirs is reversed. In this Letter, we present a far-field radiative thermal rectifier based on high-temperature superconducting materials with a rectification ratio up to 80%. This value is among the highest reported in literature. Two configurations are examined: a superconductor (Tl2Ba2CaCu2O8) exchanging heat with (1) a black body and (2) another superconductor, YBa2Cu3O7 in this case. The first configuration shows a higher maximal rectification ratio. Besides, we show that the two-superconductor rectifier exhibits different rectification regimes depending on the choice of the reference temperature, i.e., the temperature of the thermostat. Presented results might be useful for energy conversion devices, efficient cryogenic radiative insulators engineering, and thermal logical circuits’ development.

Radiative Thermal Rectification between SiC and SiO2

By means of fluctuational electrodynamics, we calculate radiative heat flux between two planar materials respectively made of SiC and SiO2. More specifically, we focus on a first (direct) situation where one of the two materials (for example SiC) is at ambient temperature whereas the second material is at a higher one, then we study a second (reverse) situation where the material temperatures are inverted. When the two fluxes corresponding to the two situations are different, the materials are said to exhibit thermal rectification, a property with potential applications in thermal regulation. Rectification variations with temperature and separation distance are reported here. Calculations are performed using material optical data experimentally determined by Fourier transform emission spectrometry of heated materials between ambient temperature (around 300 K) and 1480 K. It is shown that rectification is much more important in the near-field domain, i.e. at separation distances smaller than the thermal wavelength. In addition, we see that the larger is the temperature difference, the larger is rectification. Large rectification is finally interpreted due to a weakening of the SiC surface polariton when temperature increases, a weakening which affects much less SiO2 resonances.

Application of network identification by deconvolution method to the thermal analysis of the pump-probe transient thermoreflectance signal

The paper discusses the possibility to apply network identification by deconvolution (NID) method to the analysis of the thermal transient behavior due to a laser delta pulse excitation in a pump-probe transient thermoreflectance experiment. NID is a method based on linear RC network theory using Fouriers law of heat conduction. This approach allows the extraction of the thermal time constant spectrum of the sample under study after excitation by either a step or pulse function. Furthermore, using some mathematical transformations, the method allows analyzing the detail of the heat flux path through the sample, starting from the excited top free surface, by introducing two characteristic functions: the cumulative structure function and the differential structure function. We start by a review of the theoretical background of the NID method in the case of a step function excitation and then show how this method can be adjusted to be used in the case of a delta pulse function excitation. We show how the NID method can be extended to analyze the thermal transients of many optical experiments in which the excitation function is a laser pulse. The effect of the semi-infinite substrate as well as extraction of the interface and thin film thermal resistances will be discussed.

Short time transient thermal behavior of solid-state microrefrigerators

We present detailed experimental and theoretical studies of the short time transient thermal behavior of SiGe superlattice microrefrigerators on a chip. Transient temperature profiles of microrefrigerator devices of different sizes are obtained using thermoreflectance technique. Thermal imaging with submicron spatial resolution, 0.1 K temperature resolution, and 100 ns temporal resolution is achieved. The dynamic behavior of the microrefrigerators shows an interplay between Peltier and Joule effects. Peltier cooling appears first with a time constant of about 10–30 μs, then Joule heating in the device starts taking over with a time constant of about 50–150 μs. The experimental results agree very well with the theoretical predictions based on thermal quadruple method. The difference in the two time constants can be explained considering the three-dimensional thermal resistances and capacitances of the microrefrigerator. In addition this shows that the Joule heating at the top metal/semiconductor interface ...

Vacuum-induced phonon transfer between two solid dielectric materials: Illustrating the case of Casimir force coupling

The natural transition from the radiative regime to the conductive regime of heat transfer between two identical isotropic dielectric solid materials, is questioned by investigating the possibility of induced phonon transfer in vacuum. We describe the process in a general way assuming a certain phonon coupling mechanism between the two identical solids, then we particularly illustrate the case of coupling through Casimir force. We analyze how this mechanism of heat transfer compares and competes with the near field thermal radiation using a local model of the dielectric function. We show that the former mechanism can be very effective and even overpass the latter mechanism depending on the nature of the solid dielectric materials, the distance gap between them as well as the operating temperature regime.