Jérôme Meziere

Contribution of numerical simulation to silicon carbide bulk growth and epitaxy

High temperature epitaxial processes for SiC bulk and thin films by physical vapour transport and chemical vapour deposition are reviewed from an academic point of view using heat and mass transfer modelling and simulation. The objective is to show that this modelling approach could provide information on fabrication and characterization for the improvement of the knowledge of the growth history. Recent results of our integrated research programme on SiC, taking into account the fabrication, process modelling and characterization, will be presented.

Direct wafer bonding for nanostructure preparations

Direct Wafer Bonding has been widely developed and is very attractive for a lot of applications. Using original techniques based on direct bonding enable to carry out specific engineered substrates. Various illustrations are given among which twisted Si-Si bonded substrates, where buried dislocation networks play a key role in the subsequent elaboration of nanostructures.

Experiment and Modeling of the Large-Area Etching and Growth Rate of Epitaxial SiC

The growth of thick and high quality epitaxial 4H-SiC layers requir es a good control of the CVD process. An horizontal hot-wall reactor commerci alized by the Epigress company is used. The precursors are silane and propane diluted in hy rogen. The typical temperature range is 1700-1900 K and the pressure fixed at 250 mbar. Mode ling and numerical simulation are used to better understand the intricate mi xture of phenomena involving electromagnetics, heat, mass transfer and reactivity in different geometries and experimental conditions [1-4]. 3D modeling and simulation of electromag netics and heat transfer have been previously presented for this reactor [1]. In this paper, a chemistry model including surface deposition and hydrogen etching is first describe d. Finally, experiments and measurements are compared to simulation results to validate the mod l and to reveal the problems related to high temperature technology and large-scale area growt h.