Jessamyn A. Fairfield

Manipulating Connectivity and Electrical Conductivity in Metallic Nanowire Networks

Connectivity in metallic nanowire networks with resistive junctions is manipulated by applying an electric field to create materials with tunable electrical conductivity. In situ electron microscope and electrical measurements visualize the activation and evolution of connectivity within these networks. Modeling nanowire networks, having a distribution of junction breakdown voltages, reveals universal scaling behavior applicable to all network materials. We demonstrate how local connectivity within these networks can be programmed and discuss material and device applications.

Synaptic plasticity functions in an organic electrochemical transistor

Synaptic plasticity functions play a crucial role in the transmission of neural signals in the brain. Short-term plasticity is required for the transmission, encoding, and filtering of the neural signal, whereas long-term plasticity establishes more permanent changes in neural microcircuitry and thus underlies memory and learning. The realization of bioinspired circuits that can actually mimic signal processing in the brain demands the reproduction of both short- and long-term aspects of synaptic plasticity in a single device. Here, we demonstrate the implementation of neuromorphic functions similar to biological memory, such as short- to long-term memory transition, in non-volatile organic electrochemical transistors (OECTs). Depending on the training of the OECT, the device displays either short- or long-term plasticity, therefore, exhibiting non von Neumann characteristics with merged processing and storing functionalities. These results are a first step towards the implementation of organic-based neuromorphic circuits.

A single nanoscale junction with programmable multilevel memory

Nanoscale devices that are sensitive to measurement history enable memory applications, and memristors are currently under intense investigation for robustness and functionality. Here we describe the fabrication and performance of a memristor-like device that comprises a single TiO2 nanowire in contact with Au electrodes, demonstrating both high sensitivity to electrical stimuli and high levels of control. Through an electroforming process, a population of charged dopants is created at the interface between the wire and electrode that can be manipulated to demonstrate a range of device and memristor characteristics. In contrast to conventional two-terminal memristors, our device is essentially a diode that exhibits memristance in the forward bias direction. The device is easily reset to the off state by a single voltage pulse and can be incremented to provide a range of controllable conductance states in the forward direction. Electrochemical modification of the Schottky barrier at the electrodes is proposed as an underlying mechanism, and six-level memory operations are demonstrated on a single nanowire.

Effective Electrode Length Enhances Electrical Activation of Nanowire Networks: Experiment and Simulation

Networks comprised of randomly oriented overlapping nanowires offer the possibility of simple fabrication on a variety of substrates, in contrast with the precise placement required for devices with single or aligned nanowires. Metal nanowires typically have a coating of surfactant or oxide that prevents aggregation, but also prevents electrical connection. Prohibitively high voltages can be required to electrically activate nanowire networks, and even after activation many nanowire junctions remain nonconducting. Nonelectrical activation methods can enhance conductivity but destroy the memristive behavior of the junctions that comprise the network. We show through both simulation and experiment that electrical stimulation, microstructured electrode geometry, and feature scaling can all be used to manipulate the connectivity and thus electrical conductivity of networks of silver nanowires with a nonconducting polymer coating. More generally, these results describe a strategy to integrate nanomaterials into controllable, adaptive macroscale materials.

Quantitative Study of the Photothermal Properties of Metallic Nanowire Networks

In this article, we present a comprehensive investigation of the photothermal properties of plasmonic nanowire networks. We measure the local steady-state temperature increase, heat source density, and absorption in Ag, Au, and Ni metallic nanowire networks under optical illumination. This allows direct experimental confirmation of increased heat generation at the junction between two metallic nanowires and stacking-dependent absorption of polarized light. Due to thermal collective effects, the local temperature distribution in a network is shown to be completely delocalized on a micrometer scale, despite the nanoscale features in the heat source density. Comparison of the experimental temperature profile with numerical simulation allows an upper limit for the effective thermal conductivity of a Ag nanowire network to be established at 43 Wm(-1) K(-1) (0.1 κbulk).

High-voltage-compatable, fully depleted CCDs

We describe charge-coupled device (CCD) development activities at the Lawrence Berkeley National Laboratory (LBNL). Back-illuminated CCDs fabricated on 200-300 μm thick, fully depleted, high-resistivity silicon substrates are produced in partnership with a commercial CCD foundry. The CCDs are fully depleted by the application of a substrate bias voltage. Spatial resolution considerations require operation of thick, fully depleted CCDs at high substrate bias voltages. We have developed CCDs that are compatible with substrate bias voltages of at least 200V. This improves spatial resolution for a given thickness, and allows for full depletion of thicker CCDs than previously considered. We have demonstrated full depletion of 650-675 μm thick CCDs, with potential applications in direct x-ray detection. In this work we discuss the issues related to high-voltage operation of fully depleted CCDs, as well as experimental results on high-voltage-compatible CCDs.

Orientation selectivity in a multi-gated organic electrochemical transistor

Neuromorphic devices offer promising computational paradigms that transcend the limitations of conventional technologies. A prominent example, inspired by the workings of the brain, is spatiotemporal information processing. Here we demonstrate orientation selectivity, a spatiotemporal processing function of the visual cortex, using a poly(3,4ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) organic electrochemical transistor with multiple gates. Spatially distributed inputs on a gate electrode array are found to correlate with the output of the transistor, leading to the ability to discriminate between different stimuli orientations. The demonstration of spatiotemporal processing in an organic electronic device paves the way for neuromorphic devices with new form factors and a facile interface with biology.

Controlling Nanogap Quantum Dot Photoconductivity through Optoelectronic Trap Manipulation

Nanoscale devices are being extensively studied for their tunable electronic and optical properties, but the influence of impurities and defects is amplified at these length scales and can lead to poorly understood variations in characteristics of semiconducting materials. By performing a large ensemble of photoconductivity measurements in nanogaps bridged by core-shell CdSe/ZnS semiconductor nanocrystals, we discover optoelectronic methods for affecting solid-state charge trap populations. We introduce a model that unifies previous work and transforms the problem of irreproducibility in nanocrystal electronic properties into a reproducible and robust photocurrent response due to trap state manipulation. Because traps dominate many physical processes, these findings may lead to improved performance and device tunability for various nanoscale applications through the control and optimization of impurities and defects.

Improved spatial resolution in thick, fully-depleted CCDs with enhanced red sensitivity

The point spread function (PSF) is an important measure of spatial resolution in CCDs for point-like objects, since it can affect use in imaging and spectroscopic applications. We present new data and theoretical developments in the study of lateral charge diffusion in thick, fully-depleted charge-coupled devices (CCDs) developed at Lawrence Berkeley National Laboratory (LBNL). Because they are fully depleted, the LBNL devices have no field-free region, and diffusion can be controlled through the application of an external bias voltage. We give results for a 3512times3512 format, 10.5 mum pixel back-illuminated p-channel CCD developed for the SuperNova/Acceleration Probe (SNAP), a proposed satellite-based experiment designed to study dark energy. The PSF was measured at substrate bias voltages between 3 V and 115 V. At a bias voltage of 115 V, we measure an rms diffusion of 3.7plusmn0.2 mum. Lateral charge diffusion in LBNL CCDs is thus expected to meet the SNAP requirements

Reduced Charge Diffusion in Thick, Fully Depleted CCDs With Enhanced Red Sensitivity

Lateral charge diffusion in charge-coupled devices (CCDs) dominates the device point-spread function (PSF), which can affect both image quality and spectroscopic resolution. We present new data and theoretical interpretations for lateral charge diffusion in thick, fully depleted CCDs developed at Lawrence Berkeley National Laboratory (LBNL). Because they can be overdepleted, the LBNL devices have no field-free region and diffusion is controlled through the application of an external bias voltage. Recent improvements in CCD design at LBNL allow the application of bias voltages exceeding 200 V. We give results for a 3512times3512 format, 10.5 mum pixel back-illuminated p-channel CCD developed for the SuperNova/Acceleration Probe (SNAP), a proposed satellite-based experiment designed to study dark energy. Lateral charge diffusion, which is well described by a symmetric two-dimensional (2-D) Gaussian function, was measured at substrate bias voltages between 3 and 115 V. At a bias voltage of 115 V, we measure a root-mean square (rms) diffusion of 3.7plusmn0.2mum. Lateral charge diffusion in LBNL CCDs will meet the SNAP requirements