Jiang Hongchuan

Composition-Controlled Low Field Magnetostriction of TbFe Amorphous Films

Amorphous TbFe films are fabricated by dc magnetron sputtering, and their magnetostrictions at low field are examined over a wide range of terbium content (from 32 at.% to 70 at.%). It is found that the terbium content plays an important role in the magnetic and magnetostrictive properties of TbFe films. TbFe film soft magnetic properties and low field magnetostriction can be efficiently improved by controlling the terbium at an optimum content. The magnetostriction at lower magnetic field is increased with the increase of terbium content up to 48.2 at.%. After reaching the maximum value, further increase of terbium content would result in a great decrease of the low field magnetostriction. By contrast, at higher magnetic field, the magnetostriction is decreased monotonically with the increase of the terbium content.

Effects of Rapid Cycle Annealing Temperature on TbFe Magnetostrictive Films

The effects of annealing temperature on TbFe films prepared by dc magnetron sputtering were discussed. X-ray diffraction patterns indicate that these polycrystalline films consisting mainly of α-Fe and TbFe2 lave phase with grain sizes less than 25 nm can be obtained by a rapid cycle annealing process. Grain sizes can be controlled by varying annealing temperatures. Film hysteresis loop studies show that annealing treatment can improve TbFe film in-plane soft magnetic performances. Magnetic domain structures explored by a magnetic force microscopy show that in the as-deposited films, maze domain structures exist, hence it possesses perpendicular anisotropy and larger anisotropic constant Ku. No domains are observed when annealing temperature is lower than 400 degrees C. However, maze domain structures appear again when annealing temperature is higher than 400 degrees C. Two maxima of magnetostrictive coefficients are obtained at annealing temperatures of 300 degrees C and 500 degrees C in the presence of a 40 kA.m−1 external magnetic field.