Jiansong Gao

Titanium nitride films for ultrasensitive microresonator detectors

Titanium nitride (TiNx) films are ideal for use in superconducting microresonator detectors for the following reasons: (a) the critical temperature varies with composition (0 107) and have noise properties similar to resonators made using other materials, while the quasiparticle lifetimes are reasonably long, 10–200 μs. TiN microresonators should therefore reach sensitivities well below 10−19 W Hz−1/2.

Low loss superconducting titanium nitride coplanar waveguide resonators

Thin films of TiN were sputter-deposited onto Si and sapphire wafers with and without SiN buffer layers. The films were fabricated into rf coplanar waveguide resonators, and internal quality factor measurements were taken at millikelvin temperatures in both the many photon and single photon limits, i.e., high and low electric field regimes, respectively. At high field, we found the highest internal quality factors (∼107) were measured for TiN with predominantly a (200)-TiN orientation. The (200)-TiN is favored for growth at high temperature on either bare Si or SiN buffer layers. However, growth on bare sapphire or Si(100) at low temperature resulted in primarily a (111)-TiN orientation. Ellipsometry and Auger measurements indicate that the (200)-TiN growth on the bare Si substrates is correlated with the formation of a thin, ≈2 nm, layer of SiN during the predeposition procedure. On these surfaces we found a significant increase of Qi for both high and low electric field regimes.

Improved superconducting qubit coherence using titanium nitride

We demonstrate enhanced relaxation and dephasing times of transmon qubits, up to ∼60 μs, by fabricating the interdigitated shunting capacitors using titanium nitride (TiN). Compared to qubits made with lift-off aluminum deposited simultaneously with the Josephson junction, this represents as much as a six-fold improvement and provides evidence that surface losses from two-level system (TLS) defects residing at or near interfaces contribute to decoherence. Concurrently, we observe an anomalous temperature dependent frequency shift of TiN resonators, which is inconsistent with the predicted TLS model.

A titanium-nitride near-infrared kinetic inductance photon-counting detector and its anomalous electrodynamics

We demonstrate single-photon counting at 1550 nm with titanium-nitride (TiN) microwave kinetic inductancedetectors. Full-width-at-half-maximum energy resolution of 0.4 eV is achieved. 0-, 1-, 2-photon events are resolved and shown to follow Poisson statistics. We find that the temperature-dependent frequency shift deviates from the Mattis-Bardeen theory, and the dissipation response shows a shorter decay time than the frequency response at low temperatures. We suggest that the observed anomalous electrodynamics may be related to quasiparticle traps or subgap states in the disordered TiN films. Finally, the electron density-of-states is derived from the pulse response.

A MEASUREMENT OF THE COSMIC MICROWAVE BACKGROUND GRAVITATIONAL LENSING POTENTIAL FROM 100 SQUARE DEGREES OF SPTPOL DATA

We present a measurement of the cosmic microwave background (CMB) gravitational lensing potential using data from the first two seasons of observations with SPTpol, the polarization-sensitive receiver currently installed on the South Pole Telescope. The observations used in this work cover 100 deg^2 of sky with arcminute resolution at 150 GHz. Using a quadratic estimator, we make maps of the CMB lensing potential from combinations of CMB temperature and polarization maps. We combine these lensing potential maps to form a minimum-variance (MV) map. The lensing potential is measured with a signal-to-noise ratio of greater than one for angular multipoles between 100 < L < 250. This is the highest signal-to-noise mass map made from the CMB to date and will be powerful in cross-correlation with other tracers of large-scale structure. We calculate the power spectrum of the lensing potential for each estimator, and we report the value of the MV power spectrum between 100 < L < 2000 as our primary result. We constrain the ratio of the spectrum to a fiducial ΛCDM model to be A_(MV) = 0.92 ± 0.14 (Stat.) ± 0.08 (Sys.). Restricting ourselves to polarized data only, we find A_(POL) = 0.92 ± 0.24 (Stat.) ± 0.11 (Sys.). This measurement rejects the hypothesis of no lensing at 5.9σ using polarization data alone, and at 14σ using both temperature and polarization data.

High-resolution gamma-ray spectroscopy with a microwave-multiplexed transition-edge sensor array

We demonstrate very high resolution photon spectroscopy with a microwave-multiplexed two-pixel transition-edge sensor (TES) array. We measured a 153Gd photon source and achieved an energy resolution of 63 eV full-width-at-half-maximum at 97 keV and an equivalent readout system noise of 86 pA/Hz at the TES. The readout circuit consists of superconducting microwave resonators coupled to radio-frequency superconducting-quantum-interference-devices and transduces changes in input current to changes in phase of a microwave signal. We use flux-ramp modulation to linearize the response and evade low-frequency noise. This demonstration establishes one path for the readout of cryogenic X-ray and gamma-ray sensor arrays with more than 103 elements and spectral resolving powers R=λ/Δλ>103.

Two-level system noise reduction for Microwave Kinetic Inductance Detectors

Noise performance is one of the most crucial aspects of any detector. Superconducting Microwave Kinetic Inductance Detectors (MKIDs) have an “excess” frequency noise that shows up as a small time dependent jitter of the resonance frequency characterized by the frequency noise power spectrum measured in units of Hz^2/Hz. Recent studies have shown that this noise almost certainly originates from a surface layer of two-level system (TLS) defects on the metallization or substrate. Fluctuation of these TLSs introduces noise in the resonator due to coupling of the TLS electric dipole moments to the resonators electric field. Motivated by a semi-empirical quantitative theory of this noise mechanism, we have designed and tested new resonator geometries in which the high-field “capacitive” portion of the CPW resonator is replaced by an interdigitated capacitor (IDC) structure with 10–20 µm electrode spacing, as compared to the 2 µm spacing used for our more conventional CPW resonators. Measurements show that this new IDC design has dramatically lower TLS noise, currently by about a factor of ~29 in terms of the frequency noise power spectrum, corresponding to an improvement of about a factor of √(29) in NEP. These new devices are replacing the CPW resonators in our next design iteration in progress for MKIDCam. Opportunities and prospects for future reduction of the TLS noise will be discussed

Photon-noise limited sensitivity in titanium nitride kinetic inductance detectors

We demonstrate photon-noise limited performance at sub-millimeter wavelengths in feedhorn-coupled, microwave kinetic inductance detectors made of a TiN/Ti/TiN trilayer superconducting film, tuned to have a transition temperature of 1.4 K. Micro-machining of the silicon-on-insulator wafer backside creates a quarter-wavelength backshort optimized for efficient coupling at 250 μm. Using frequency read out and when viewing a variable temperature blackbody source, we measure device noise consistent with photon noise when the incident optical power is >0.5 pW, corresponding to noise equivalent powers >3×10−17 W/Hz. This sensitivity makes these devices suitable for broadband photometric applications at these wavelengths.

Etch induced microwave losses in titanium nitride superconducting resonators

We have investigated the correlation between the microwave loss and patterning method for coplanar waveguide titanium nitride resonators fabricated on silicon wafers. Three different methods were investigated: fluorine- and chlorine-based reactive ion etches and an argon-ion mill. At high microwave probe powers, the reactive etched resonators showed low internal loss, whereas the ion-milled samples showed dramatically higher loss. At single-photon powers, we found that the fluorine-etched resonators exhibited substantially lower loss than the chlorine-etched ones. We interpret the results by use of numerically calculated filling factors and find that the silicon surface exhibits a higher loss when chlorine-etched than when fluorine-etched. We also find from microscopy that re-deposition of silicon onto the photoresist and side walls is the probable cause for the high loss observed for the ion-milled resonators.

Proximity-coupled Ti/TiN multilayers for use in kinetic inductance detectors

We apply the superconducting proximity effect in TiN/Ti multi-layer films to tune the critical temperature, T_C, to within 10 mK with high uniformity (less than 15 mK spread) across a 75 mm wafer. Reproducible T_C’s are obtained from 0.8 to 2.5 K. These films had high resistivities, > 100 µΩ cm, and internal quality factors for resonators in the GHz range, on the order of 100 k and higher. Trilayers of both TiN/Ti/TiN and thicker superlattice films were prepared, demonstrating a well controlled process for films over a wide thickness range. Detectors were fabricated and shown to have single photon resolution at 1550 nm. The high uniformity and controllability coupled with the high quality factor, kinetic inductance, and inertness of TiN make these films ideal for use in frequency multiplexed kinetic inductance detectors and potentially other applications such as nanowire detectors, transition edge sensors, and associated quantum information applications.