David Wisbey

Low loss superconducting titanium nitride coplanar waveguide resonators

Thin films of TiN were sputter-deposited onto Si and sapphire wafers with and without SiN buffer layers. The films were fabricated into rf coplanar waveguide resonators, and internal quality factor measurements were taken at millikelvin temperatures in both the many photon and single photon limits, i.e., high and low electric field regimes, respectively. At high field, we found the highest internal quality factors (∼107) were measured for TiN with predominantly a (200)-TiN orientation. The (200)-TiN is favored for growth at high temperature on either bare Si or SiN buffer layers. However, growth on bare sapphire or Si(100) at low temperature resulted in primarily a (111)-TiN orientation. Ellipsometry and Auger measurements indicate that the (200)-TiN growth on the bare Si substrates is correlated with the formation of a thin, ≈2 nm, layer of SiN during the predeposition procedure. On these surfaces we found a significant increase of Qi for both high and low electric field regimes.

A titanium-nitride near-infrared kinetic inductance photon-counting detector and its anomalous electrodynamics

We demonstrate single-photon counting at 1550 nm with titanium-nitride (TiN) microwave kinetic inductancedetectors. Full-width-at-half-maximum energy resolution of 0.4 eV is achieved. 0-, 1-, 2-photon events are resolved and shown to follow Poisson statistics. We find that the temperature-dependent frequency shift deviates from the Mattis-Bardeen theory, and the dissipation response shows a shorter decay time than the frequency response at low temperatures. We suggest that the observed anomalous electrodynamics may be related to quasiparticle traps or subgap states in the disordered TiN films. Finally, the electron density-of-states is derived from the pulse response.

Etch induced microwave losses in titanium nitride superconducting resonators

We have investigated the correlation between the microwave loss and patterning method for coplanar waveguide titanium nitride resonators fabricated on silicon wafers. Three different methods were investigated: fluorine- and chlorine-based reactive ion etches and an argon-ion mill. At high microwave probe powers, the reactive etched resonators showed low internal loss, whereas the ion-milled samples showed dramatically higher loss. At single-photon powers, we found that the fluorine-etched resonators exhibited substantially lower loss than the chlorine-etched ones. We interpret the results by use of numerically calculated filling factors and find that the silicon surface exhibits a higher loss when chlorine-etched than when fluorine-etched. We also find from microscopy that re-deposition of silicon onto the photoresist and side walls is the probable cause for the high loss observed for the ion-milled resonators.

Proximity-coupled Ti/TiN multilayers for use in kinetic inductance detectors

We apply the superconducting proximity effect in TiN/Ti multi-layer films to tune the critical temperature, T_C, to within 10 mK with high uniformity (less than 15 mK spread) across a 75 mm wafer. Reproducible T_C’s are obtained from 0.8 to 2.5 K. These films had high resistivities, > 100 µΩ cm, and internal quality factors for resonators in the GHz range, on the order of 100 k and higher. Trilayers of both TiN/Ti/TiN and thicker superlattice films were prepared, demonstrating a well controlled process for films over a wide thickness range. Detectors were fabricated and shown to have single photon resolution at 1550 nm. The high uniformity and controllability coupled with the high quality factor, kinetic inductance, and inertness of TiN make these films ideal for use in frequency multiplexed kinetic inductance detectors and potentially other applications such as nanowire detectors, transition edge sensors, and associated quantum information applications.

Two Level System Loss in Superconducting Microwave Resonators

High quality factor, i.e. low loss, microwave resonators are important for quantum information storage and addressing. In this work we study the resonance frequency and loss in superconducting coplanar waveguide resonators as a function of power and temperature. We find that there is increased loss at low power and low temperature. The increased loss is attributed to the existence of two-level systems (TLS) at the surfaces, interfaces, and in the bulk of insulators deposited on the structures. We show that both the temperature dependence of the resonant frequency and the power dependence of the loss can be used to find the TLS contribution to the loss. The TLS intrinsic loss tangent derived from the frequency shift data at high power is shown to agree well with the direct loss measurement at low power. The former allows for a relatively fast measurement of the TLS loss. As an example, we measure the properties of amorphous AlOX deposited on the resonators and find a TLS loss tangent of 1 × 10-3.

Effect of metal/substrate interfaces on radio-frequency loss in superconducting coplanar waveguides

Microscopic two-level systems (TLSs) are known to contribute to loss in resonant superconducting microwave circuits. This loss increases at low power and temperatures as the TLSs become unsaturated. We find that the loss is dependent on both the substrate-superconductor interface and the roughness of the surfaces. A native, oxide-free interface reduced the loss due to TLSs. However, a rough surface in the CPW gap did not cause more TLS loss, but the overall loss was significantly increased for the roughest surfaces.

Coherence in a transmon qubit with epitaxial tunnel junctions

We developed transmon qubits based on epitaxial tunnel junctions and interdigitated capacitors. This multileveled qubit, patterned by use of all-optical lithography, is a step towards scalable qubits with a high integration density. The relaxation time T1 is 0.72−0.86 μs and the ensemble dephasing time T2* is slightly larger than T1. The dephasing time T2 (1.36 μs) is nearly energy-relaxation-limited. Qubit spectroscopy yields weaker level splitting than observed in qubits with amorphous barriers in equivalent-size junctions. The qubit’s inferred microwave loss closely matches the weighted losses of the individual elements (junction, wiring dielectric, and interdigitated capacitor), determined by independent resonator measurements.We developed transmon qubits based on epitaxial tunnel junctions and interdigitated capacitors. This multileveled qubit, patterned by use of all-optical lithography, is a step towards scalable qubits with a high integration density. The relaxation time T1 is 0.72−0.86 μs and the ensemble dephasing time T2* is slightly larger than T1. The dephasing time T2 (1.36 μs) is nearly energy-relaxation-limited. Qubit spectroscopy yields weaker level splitting than observed in qubits with amorphous barriers in equivalent-size junctions. The qubit’s inferred microwave loss closely matches the weighted losses of the individual elements (junction, wiring dielectric, and interdigitated capacitor), determined by independent resonator measurements.

Reduced microwave loss in trenched superconducting coplanar waveguides

Reducing the contribution of all sources of microwave loss is important for increasing coherence times in superconducting qubits. In this paper we investigate reducing the loss by systematically removing Si substrate material from the gap region in titanium nitride coplanar waveguides fabricated on intrinsic Si substrates. By exploiting the radial dependence of the etch rate in a parallel plate reactive ion etcher, otherwise identical coplanar waveguides with only the Si gaps etched to varying depth, i.e., trenched, were created in a single TiN film within a single processing step. Measurements at these multiple depths permit the study of the loss reduction in isolation to the unintentional effects caused by any single processing step. When comparing the loss from all trench depths we found that the high power loss was similar, but in the single photon limit the loss was reduced by a factor of two for deeper trenches in agreement with predictions from finite element analysis.

Characterization and in-situ monitoring of sub-stoichiometric adjustable superconducting critical temperature titanium nitride growth

The structural and electrical properties of Ti-N films deposited by reactive sputtering depend on their growth parameters, in particular the Ar:N2 gas ratio. We show that the nitrogen percentage changes the crystallographic phase of the film progressively from pure α-Ti, through an α-Ti phase with interstitial nitrogen, to stoichiometric Ti2N, and through a substoichiometric TiNX to stoichiometric TiN. These changes also affect the superconducting transition temperature, TC, allowing, the superconducting properties to be tailored for specific applications. After decreasing from a TC of 0.4 K for pure Ti down to below 50 mK at the Ti2N point, the TC then increases rapidly up to nearly 5 K over a narrow range of nitrogen incorporation. This very sharp increase of TC makes it difficult to control the properties of the film from wafer-to-wafer as well as across a given wafer to within acceptable margins for device fabrication. Here we show that the nitrogen composition and hence the superconductive properties are related to, and can be determined by, spectroscopic ellipsometry. Therefore, this technique may be used for process control and wafer screening prior to investing time in processing devices. Contribution of U.S. government, not subject to copyright.

The structure of the CoS2 (100)-(1 ? 1) surface

Quantitative low-energy electron diffraction (LEED) has been used to determine the structure of the cubic CoS 2 (100)-(1 × 1) surface. The clearly favored structural model from the LEED analysis is the 1S-terminated (1 × 1) surface, in which the S–S dimer is intact and the terminal surface layer retains a complete S–Co–S sandwich structure. The surface S atoms move outwards towards the vacuum while the subsurface Co atoms move towards the bulk, by approximately 0.03 and 0.11 A, respectively. In addition, the S atoms in the third sublayer relax outwards by about 0.12 A, thus providing an indication of a stronger S–S dimer bond and a denser surface region. The complete atomic coordinates of the S–Co–S surface layers are determined in this analysis. Includes “Corrigendum” from J. Phys.: Condens. Matter 19 249001