Jiao Fu

Fabrication of diamond microlenses by chemical reflow method

We introduce a chemical reflow method to fabricate diamond microlenses. First, photoresist pillars developed by photolithography are reflowed in organic solvent vapor atmosphere at 20 °C to form spherical segment patterns on diamond substrate. The effects of chemical solvent type and reflow time on photoresist pattern profiles are investigated. Second, via dry etching, diamond microlenses are fabricated by transferring the spherical segment pattern into substrate. Furthermore, these diamond microlenses demonstrate low numerical aperture, well-controllable curvature, and good imaging performance with projecting experiment.

UV-photodetector based on NiO/diamond film

In this study, a NiO/diamond UV-photodetector has been fabricated and investigated. A single crystal diamond (SCD) layer was grown on a high-pressure-high-temperature Ib-type diamond substrate by using a microwave plasma chemical vapor deposition system. NiO films were deposited directly by the reactive magnetron sputtering technique in a mixture gas of oxygen and argon onto the SCD layer. Gold films were patterned on NiO films as electrodes to form the metal-semiconductor-metal UV-photodetector which shows good repeatability and a 2 orders of magnitude UV/visible rejection ratio. Also, the NiO/diamond photodetector has a higher responsivity and a wider response range in contrast to a diamond photodetector.In this study, a NiO/diamond UV-photodetector has been fabricated and investigated. A single crystal diamond (SCD) layer was grown on a high-pressure-high-temperature Ib-type diamond substrate by using a microwave plasma chemical vapor deposition system. NiO films were deposited directly by the reactive magnetron sputtering technique in a mixture gas of oxygen and argon onto the SCD layer. Gold films were patterned on NiO films as electrodes to form the metal-semiconductor-metal UV-photodetector which shows good repeatability and a 2 orders of magnitude UV/visible rejection ratio. Also, the NiO/diamond photodetector has a higher responsivity and a wider response range in contrast to a diamond photodetector.

A finite element analysis of the effects of geometrical shape on the elastic properties of chemical vapor deposited diamond nanowire

We report the effect of geometrical shape of diamond nanowire on its mechanical properties. Finite element modeling using COMSOL Multiphysics software is used to simulate various diamond nanowire with circular, square, rectangular, hexagonal and triangular cross-sections. A bending test under concentrated load applied at one of the free ends is simulated using FEM. The force response of the nanowire under different loading is studied for the various cross-sections. The dimensions of each cross-section is chosen so that material properties such as Young’s modulus can be kept constant for comparison in all the cross-sections. It is found out that the bending capability of a triangular nanowire is higher compared to other cross-sections due to its lowest second moment. Circular and hexagonal cross-section show highest stiffness. The study of mechanical property of diamond nanowires is useful for optimal nanomechanical designs where the effect of cross-section has to be taken into account.

Investigation of the occupancy ratio dependence for microlens arrays on diamond

Diamond microlens arrays with a high occupancy ratio were fabricated by an improved thermal reflow method. Our resultes show that the occupancy ratio of a photoresist mask could be improved with optimizing the reflow temperature, time and photoresist thickness during the reflow process. The fabricated microlens arrays exhibited a uniform arrangement and good optical performance.

Ohmic contact between iridium film and hydrogen-terminated single crystal diamond

Investigation of ohmic contact between iridium (Ir) film and hydrogen-terminated single crystal diamond has been carried out with annealing temperature from 300 to 600 °C in argon (Ar) and hydrogen ambient. Electrodes were deposited on hydrogen-terminated single crystal diamond by electron beam evaporation technique, and specific contact resistivity has been measured by transmission line model. The interface between Ir film and hydrogen-terminated single crystal diamond was characterized by transmission electron microscopy and energy dispersive X-ray spectroscopy. Theoretical calculation value of barrier height between Ir film and hydrogen-terminated single crystal diamond was around −1.1 eV. All results indicate that an excellent ohmic contact could be formed between Ir film and hydrogen-terminated single diamond.

FEM thermal analysis of Cu/diamond/Cu and diamond/SiC heat spreaders

The effects of thermal stress resulting from thermal cooling in copper/diamond/copper heat spreader is investigated using finite element method. A similar model of diamond/SiC heat spreader is compared without addition of interlayer. The effect of carbide interlayer in reduction of interfacial thermal stress is investigated. The results show that the carbide interlayer film thickness is critical in stress reduction for a copper/diamond/copper heat spreader device. Diamond/SiC device has lower interfacial stress without interlayer. The study of mechanical and thermal property of diamond heat spreader is useful for optimal designs of efficient heat spreader for electronic components.

Effect of thermoelastic damping on silicon, GaAs, diamond and SiC micromechanical resonators

The effect of thermoelastic damping as a main dissipation mechanism in single crystalline silicon, GaAs, diamond, SiC and SiO2 micromechanical resonators are studied. Numerical simulation is performed to compare quality factors of the given materials. Results using Zener’s well-known approximation and recent developments of Lifshitz and Roukes models were used to model thermoelasticity effects. In the later model, the effect of thermal diffusion length is taken into account for determination of thermoelastic damping. Our results show that larger discrepancy is obtained between the two models for SiO2. The difference is pronounced when beam aspect ratio (L/w) is smaller. Such progresses will find potential applications in optimal design of high quality factor micrometer- and nanometer-scale electromechanical systems.