Zhangcheng Liu

Fabrication of UV Photodetector on TiO2/Diamond Film.

The properties of ultraviolet (UV) photodetector fabricated on TiO2/diamond film were investigated. Single crystal diamond layer was grown on high-pressure-high-temperature Ib-type diamond substrate by microwave plasma chemical vapor deposition method, upon which TiO2 film was prepared directly using radio frequency magnetron sputtering technique in Ar and O2 mixing atmosphere. Tungsten was used as electrode material to fabricate metal-semiconductor-metal UV photodetector. The dark current is measured to be 1.12 pA at 30 V. The photo response of the device displays an obvious selectivity between UV and visible light, and the UV-to-visible rejection ratio can reach 2 orders of magnitude. Compared with that directly on diamond film, photodetector on TiO2/diamond film shows higher responsivity.

Fabrication of three dimensional diamond ultraviolet photodetector through down-top method

Three dimensional diamond ultraviolet (UV) photodetector have been fabricated on diamond epitaxial layer through down-top approach, where diamond epitaxial layer was grown between metal electrodes. A thin diamond epitaxial layer was first grown on high-pressure high-temperature single crystal diamond substrate. Then, the diamond epitaxial layer was covered by interdigitated tungsten electrodes. Furthermore, another diamond epitaxial layer was grown on uncovered area. At last, UV-Ozone treatment was used to oxidize the surface. The optoelectronic performance of the photodetector was characterized, exhibiting a large responsivity and a repeatable transient response behavior. Moreover, down-top process is beneficial for the electrode conductivity stability. Also, an ohmic contact could be formed between tungsten and diamond during growth. The results indicate that down-top process is an efficient way for fabrication of three dimensional diamond photodetectors.

UV-photodetector based on NiO/diamond film

In this study, a NiO/diamond UV-photodetector has been fabricated and investigated. A single crystal diamond (SCD) layer was grown on a high-pressure-high-temperature Ib-type diamond substrate by using a microwave plasma chemical vapor deposition system. NiO films were deposited directly by the reactive magnetron sputtering technique in a mixture gas of oxygen and argon onto the SCD layer. Gold films were patterned on NiO films as electrodes to form the metal-semiconductor-metal UV-photodetector which shows good repeatability and a 2 orders of magnitude UV/visible rejection ratio. Also, the NiO/diamond photodetector has a higher responsivity and a wider response range in contrast to a diamond photodetector.In this study, a NiO/diamond UV-photodetector has been fabricated and investigated. A single crystal diamond (SCD) layer was grown on a high-pressure-high-temperature Ib-type diamond substrate by using a microwave plasma chemical vapor deposition system. NiO films were deposited directly by the reactive magnetron sputtering technique in a mixture gas of oxygen and argon onto the SCD layer. Gold films were patterned on NiO films as electrodes to form the metal-semiconductor-metal UV-photodetector which shows good repeatability and a 2 orders of magnitude UV/visible rejection ratio. Also, the NiO/diamond photodetector has a higher responsivity and a wider response range in contrast to a diamond photodetector.

Analysis of diamond pseudo-vertical Schottky barrier diode through patterning tungsten growth method

In this study, diamond pseudo-vertical architecture Schottky barrier diodes (PVSBDs) through the patterning tungsten growth method have been investigated. The forward current density is 16 A/cm2 at 5 V, and a rectification ratio is more than 5 orders of magnitude at ±5 V for diamond PVSBD. The reverse breakdown voltage is 640 V, and the corresponding electrical field is 4.57 MV/cm. These results are obtained by patterning tungsten (W) on the diamond surface as a blocking layer and growing a diamond epitaxial layer on the uncovered zone. A W/diamond ohmic contact was formed during the diamond epitaxial layer growth process. An aluminum film was used as a Schottky contact. Overall, the results illustrate that W patterned growth to fabricate PVSBD is efficient.