Jihan Chen

Thermoacoustic Transduction in Individual Suspended Carbon Nanotubes

We report an experimental measurement of the acoustic signal emitted from an individual suspended carbon nanotube (CNT) approximate 2 μm in length, 1 nm in diameter, and 10(-21) kg in mass. This system represents the smallest thermoacoustic system studied to date. By applying an AC voltage of 1.4 V at 8 kHz to the suspended CNT, we are able to detect the acoustic signal using a commercial microphone. The acoustic power detected is found to span a range from 0.1 to 2.4 attoWatts or 0.2 to 1 μPa of sound pressure. This corresponds to thermoacoustic efficiencies ranging from 0.007 to 0.6 Pa/W for the seven devices that were measured in this study. Here, the small lateral dimensions of these devices cause large heat losses due to thermal conduction, which result in the relatively small observed thermoacoustic efficiencies.

Nanofeatures on GaAs (111)B via photolithography

Mesas defined on GaAs(111)B substrates by photolithography followed by wet chemical etching are found to be triangular pyramids with truncated tops. The areal dimensions of the unetched tops of the pyramidal mesas diminish with etch time and can be reduced to an apex on continued etching. Transmission electron microscopy is used to examine a post‐growth etched GaAs/Al0.3Ga0.7As multilayer structure grown on GaAs(111)B. A three‐dimensionally confined GaAs volume of the order of 105 atoms is observed.

Single-ion adsorption and switching in carbon nanotubes

Single-ion detection has, for many years, been the domain of large devices such as the Geiger counter, and studies on interactions of ionized gasses with materials have been limited to large systems. To date, there have been no reports on single gaseous ion interaction with microelectronic devices, and single neutral atom detection techniques have shown only small, barely detectable responses. Here we report the observation of single gaseous ion adsorption on individual carbon nanotubes (CNTs), which, because of the severely restricted one-dimensional current path, experience discrete, quantized resistance increases of over two orders of magnitude. Only positive ions cause changes, by the mechanism of ion potential-induced carrier depletion, which is supported by density functional and Landauer transport theory. Our observations reveal a new single-ion/CNT heterostructure with novel electronic properties, and demonstrate that as electronics are ultimately scaled towards the one-dimensional limit, atomic-scale effects become increasingly important.

Black Phosphorus Field-Effect Transistors with Work Function Tunable Contacts

Black phosphorus (BP) has been recently rediscovered as an elemental two-dimensional (2D) material that shows promising results for next generation electronics and optoelectronics because of its intrinsically superior carrier mobility and small direct band gap. In various 2D field-effect transistors (FETs), the choice of metal contacts is vital to the device performance, and it is a major challenge to reach ultralow contact resistances for highly scaled 2D FETs. Here, we experimentally show the effect of a work function tunable metal contact on the device performance of BP FETs. Using palladium (Pd) as the contact material, we employed the reaction between Pd and H2 to form a Pd-H alloy that effectively increased the work function of Pd and reduced the Schottky barrier height (ΦB) in a BP FET. When the Pd-contacted BP FET was exposed to 5% hydrogen concentrated Ar, the contact resistance (Rc) improved between the Pd electrodes and BP from ∼7.10 to ∼1.05 Ω·mm, surpassing all previously reported contact resistances in the literature for BP FETs. Additionally, with exposure to 5% hydrogen, the transconductance of the Pd-contacted BP FET was doubled. The results shown in this study illustrate the significance of choosing the right contact material for high-performance BP FETs in order to realize the real prospect of BP in electronic applications.

Highly efficient, high speed vertical photodiodes based on few-layer MoS2

Layered transition metal dichalcogenides, such as MoS2, have recently emerged as a promising material system for electronic and optoelectronic applications. The two-dimensional nature of these materials enables facile integration for vertical device design with novel properties. Here, we report highly efficient photocurrent generation from vertical MoS2 devices fabricated using asymmetric metal contacts, exhibiting an external quantum efficiency of up to 7%. Compared to in-plane MoS2 devices, the vertical design of these devices has a much larger junction area, which is essential for achieving highly efficient photovoltaic devices. Photocurrent and photovoltage spectra are measured over the photon energy range from 1.25 to 2.5 eV, covering both the 1.8 eV direct K-point optical transition and the 1.3 eV Σ-point indirect transition in MoS2. Photocurrent peaks corresponding to both direct and indirect transitions are observed in the photocurrent spectra and exhibit different photovoltage–current characteristics. Compared to previous in-plane devices, a substantially shorter photoresponse time of 7.3 μs is achieved due to fast carrier sweeping in the vertical devices, which exhibit a −3 dB cutoff frequency of 48 kHz.

Enhanced photoluminescence in air-suspended carbon nanotubes by oxygen doping

We report photoluminescence (PL) imaging and spectroscopy of air-suspended carbon nanotubes (CNTs) before and after exposure to a brief (20 s) UV/ozone treatment. These spectra show enhanced PL intensities in 10 out of 11 nanotubes that were measured, by as much as 5-fold. This enhancement in the luminescence efficiency is caused by oxygen defects which trap excitons. We also observe an average 3-fold increase in the D-band Raman intensity further indicating the creation of defects. Previous demonstrations of oxygen doping have been carried out on surfactant-coated carbon nanotubes dissolved in solution, thus requiring substantial longer ozone/UV exposure times (∼15 h). Here, the ozone treatment is more efficient because of the surface exposure of the air-suspended CNTs. In addition to enhanced PL intensities, we observe narrowing of the emission linewidth by 3–10 nm. This ability to control and engineer defects in CNTs is important for realizing several optoelectronic applications such as light-emitting ...

Plasmon Resonant Amplification of a Hot Electron-Driven Photodiode

We report plasmon resonant excitation of hot electrons in a photodetector based on a metal/oxide/metal (Au/Al2O3/graphene) heterostructure. In this device, hot electrons, excited optically in the gold layer, jump over the oxide barrier and are injected into the graphene layer, producing a photocurrent. To amplify this process, the bottom gold electrode is patterned into a plasmon resonant grating structure with a pitch of 500 nm. The photocurrent produced in this device is measured using 633-nm-wavelength light as a function of incident angle. We observe the maximum photocurrent at ±10° from normal incidence under irra-diation with light polarized parallel to the incident plane (p-polarization) and perpendicular to the lines on the grating, and a constant (angle-independent) photocurrent under irradiation with light polarized perpendicular to the incident plane (s-polarization) and parallel to the grating. These data show an amplification factor of 4.6× under resonant conditions. At the same angle (±10°), we also observe sharp dips in the photoreflectance corresponding to waveve-ctor matching between the incident light and the plasmon mode in the grating. In addition, finite-difference time-domain simulations predict sharp dips in the photoreflectance at ±10°, and the electric field intensity profiles show clear excitation of a plasmon resonant mode when illuminated with p-polarized light at this angle.

Enhanced Cross-plane Thermoelectric Transport of Rotationally-disordered SnSe2 via Se Vapor Annealing

We report cross-plane thermoelectric measurements of SnSe and SnSe2 films grown by the modulated element reactant (MER) approach. These materials exhibit ultralow cross-plane thermal conductivities, which are advantageous for thermoelectric energy conversion. The initially grown SnSe films have relatively low cross-plane Seebeck coefficients (-38.6 μV/K) due to significant unintentional doping originating from Se vacancies when annealed in nitrogen, as a result of the relatively high vapor pressure of Se. By performing postgrowth annealing at a fixed Se partial pressure (300 °C for 30 min using SnSe2 as the Se source in a sealed tube), a transition from SnSe to SnSe2 is induced, which is evidenced by clear changes in the X-ray diffraction patterns of the films. This results in a 16-fold increase in the cross-plane Seebeck coefficient (from -38.6 to -631 μV/K) after Se annealing due to both the SnSe-to-SnSe2 transition and the mitigation of unintentional doping by Se vacancies. We also observe a corresponding 6-fold drop in the electrical conductivity (from 3 to 0.5 S/m) after Se annealing, which is consistent with both a drop in the carrier concentration and an increase in band gap. The power factor S2σ increased by 44× (from 4.5 nW/m·K2 to 0.2 μW/m·K2) after Se annealing. We believe that these results demonstrate a robust method for mitigating unintentional doping in a promising class of materials for thermoelectric applications.

Plasmon resonant amplification of hot electron-driven photocatalysis

We report plasmon resonant excitation of hot electrons in a metal based photocatalyst in the oxygen evolution half reaction in aqueous solution. Here, the photocatalyst consists of a 100-nm thick Au film deposited on a corrugated silicon substrate. In this configuration, hot electrons photoexcited in the metal are injected into the solution, ultimately reversing the water oxidation reaction (O2 + 4H+ + 4e− ⇋ 2H2O) and producing a photocurrent. In order to amplify this process, the gold electrode is patterned into a plasmon resonant grating structure with a pitch of 500 nm. The photocurrent (i.e., charge transfer rate) is measured as a function of incident angle using 633 nm wavelength light. We observe peaks in the photocurrent at incident angles of ±9° from normal when the light is polarized parallel to the incident plane (p-polarization) and perpendicular to the lines on the grating. Based on these peaks, we estimate an overall plasmonic gain (or amplification) factor of 2.1× in the charge transfer rate. At these same angles, we also observe sharp dips in the photoreflectance, corresponding to the condition when there is wavevector matching between the incident light and the plasmon mode in the grating. No angle dependence is observed in the photocurrent or photoreflectance when the incident light is polarized perpendicular to the incident plane (s-polarization) and parallel to the lines on the grating. Finite difference time domain simulations also predict sharp dips in the photoreflectance at ±9°, and the electric field intensity profiles show clear excitation of a plasmon-resonant mode when illuminated at those angles with p-polarized light.We report plasmon resonant excitation of hot electrons in a metal based photocatalyst in the oxygen evolution half reaction in aqueous solution. Here, the photocatalyst consists of a 100-nm thick Au film deposited on a corrugated silicon substrate. In this configuration, hot electrons photoexcited in the metal are injected into the solution, ultimately reversing the water oxidation reaction (O2 + 4H+ + 4e− ⇋ 2H2O) and producing a photocurrent. In order to amplify this process, the gold electrode is patterned into a plasmon resonant grating structure with a pitch of 500 nm. The photocurrent (i.e., charge transfer rate) is measured as a function of incident angle using 633 nm wavelength light. We observe peaks in the photocurrent at incident angles of ±9° from normal when the light is polarized parallel to the incident plane (p-polarization) and perpendicular to the lines on the grating. Based on these peaks, we estimate an overall plasmonic gain (or amplification) factor of 2.1× in the charge transfer rate...

Enhanced thermoelectric efficiency in topological insulator Bi2Te3 nanoplates via atomic layer deposition-based surface passivation

We report in-plane thermoelectric measurements of Bi2Te3 nanoplates, a typical topological insulator with Dirac-like metallic surface states, grown by chemical vapor deposition. The as-grown flakes exposed to ambient conditions exhibit relatively small thermopowers around −34 μV/K due to unintentional surface doping (e.g., gas adsorption and surface oxidation). After removal of the unintentional surface doping and surface passivation by deposition of 30 nm of Al2O3 using atomic layer deposition (ALD), the Seebeck coefficient of these flakes increases by a factor of 5× to −169 μV/K. Here, we believe that the ALD-based surface passivation can prevent the degradation of the thermoelectric properties caused by gas adsorption and surface oxidation processes, thus, reducing the unintentional doping in the Bi2Te3 and increasing the Seebeck coefficient. The high surface-to-volume ratio of these thin (∼10 nm thick) nanoplates make them especially sensitive to surface doping, which is a common problem among nanomaterials in general. An increase in the sample resistance is also observed after the ALD process, which is consistent with the decrease in doping.We report in-plane thermoelectric measurements of Bi2Te3 nanoplates, a typical topological insulator with Dirac-like metallic surface states, grown by chemical vapor deposition. The as-grown flakes exposed to ambient conditions exhibit relatively small thermopowers around −34 μV/K due to unintentional surface doping (e.g., gas adsorption and surface oxidation). After removal of the unintentional surface doping and surface passivation by deposition of 30 nm of Al2O3 using atomic layer deposition (ALD), the Seebeck coefficient of these flakes increases by a factor of 5× to −169 μV/K. Here, we believe that the ALD-based surface passivation can prevent the degradation of the thermoelectric properties caused by gas adsorption and surface oxidation processes, thus, reducing the unintentional doping in the Bi2Te3 and increasing the Seebeck coefficient. The high surface-to-volume ratio of these thin (∼10 nm thick) nanoplates make them especially sensitive to surface doping, which is a common problem among nanomat...