Adam Bushmaker

Electrical and Optical Characterization of Surface Passivation in GaAs Nanowires

We report a systematic study of carrier dynamics in Al(x)Ga(1-x)As-passivated GaAs nanowires. With passivation, the minority carrier diffusion length (L(diff)) increases from 30 to 180 nm, as measured by electron beam induced current (EBIC) mapping, and the photoluminescence (PL) lifetime increases from sub-60 ps to 1.3 ns. A 48-fold enhancement in the continuous-wave PL intensity is observed on the same individual nanowire with and without the Al(x)Ga(1-x)As passivation layer, indicating a significant reduction in surface recombination. These results indicate that, in passivated nanowires, the minority carrier lifetime is not limited by twin stacking faults. From the PL lifetime and minority carrier diffusion length, we estimate the surface recombination velocity (SRV) to range from 1.7 × 10(3) to 1.1 × 10(4) cm·s(-1), and the minority carrier mobility μ is estimated to lie in the range from 10.3 to 67.5 cm(2) V(-1) s(-1) for the passivated nanowires.

Optical absorption and thermal transport of individual suspended carbon nanotube bundles

A focused laser beam is used to heat individual single-walled carbon nanotube bundles bridging two suspended microthermometers. By measurement of the temperature rise of the two thermometers, the optical absorption of 7.4-10.3 nm diameter bundles is found to be between 0.03 and 0.44% of the incident photons in the 0.4 microm diameter laser spot. The thermal conductance of the bundle is obtained with the additional measurement of the temperature rise of the nanotubes in the laser spot from shifts in the Raman G band frequency. According to the nanotube bundle diameter determined by transmission electron microscopy, the thermal conductivity is obtained.

Spatially Resolved Temperature Measurements of Electrically Heated Carbon Nanotubes

Spatially resolved Raman spectra of individual pristine suspended carbon nanotubes are observed under electrical heating. The Raman G+ and G- bands show unequal temperature profiles. The preferential heating is more pronounced in short nanotubes (2 microm) than in long nanotubes (5 microm). These results are understood in terms of the decay and thermalization of nonequilibrium phonons, revealing the mechanism of thermal transport in these devices. The measurements also enable a direct estimate of thermal contact resistances and the spatial variation of thermal conductivity.

Optical measurement of thermal transport in suspended carbon nanotubes

Thermal transport in carbon nanotubes is explored using different laser powers to heat suspended single-walled carbon nanotubes ∼5μm in length. The temperature change along the length of a nanotube is determined from the temperature-induced shifts in the G band Raman frequency. The spatial temperature profile reveals the ratio of the contact thermal resistance to the intrinsic thermal resistance of the nanotube. Moreover, the obtained temperature profiles allow differentiation between diffusive and ballistic phonon transport. Diffusive transport is observed in all nanotubes measured and the ratio of thermal contact resistance to intrinsic nanotube thermal resistance is found to range from 0.02 to 17.

The influence of substrate in determining the band gap of metallic carbon nanotubes.

We report a detailed comparison of ultraclean suspended and on-substrate carbon nanotubes (CNTs) in order to quantify the effect of the substrate interaction on the effective band gap of metallic nanotubes. Here, individual CNTs are grown across two sets of electrodes, resulting in one segment of the nanotube that is suspended across a trench and the other segment supported on the substrate. The suspended segment shows a significant change in the conductance (ΔG/G = 0.84) with applied gate voltage, which is attributed to a small band gap. The on-substrate segment, however, only shows a change in the measured conductance of ΔG/G = 0.11. A Landauer model is used to fit the low bias conductance of these devices. From these fits, the band gaps in the suspended region range from 75 to 100 meV but are only 5-14.3 meV when the nanotube is in contact with the substrate. The decreased band gap is attributed to localized doping caused by trapped charges in the substrate that result in inhomogeneous broadening of the Fermi energy, which in turn limits the ability to modulate the conductance.

Laser directed growth of carbon-based nanostructures by plasmon resonant chemical vapor deposition.

We exploit the strong plasmon resonance of gold nanoparticles in the catalytic decomposition of CO to grow various forms of carbonaceous materials. Irradiating gold nanoparticles in a CO environment at their plasmon resonant frequency generates high temperatures and strong electric fields required to break the CO bond. By varying the laser power, exposure time, and gas flow rate, we deposit amorphous carbon, graphitic carbon, and carbon nanotubes. The formation of iron oxide nanocrystals catalyzes the growth of carbon nanotubes. Predefined microstructure geometries are patterned by moving the focused laser spot during the growth process, forming suspended single-walled carbon nanotube structures. Raman spectroscopy, energy dispersive X-ray spectroscopy, and transmission electron microscopy are used to characterize the resulting material. The localized nature of the plasmonic heating enables growth of these materials, while the underlying substrate remains at room temperature.

Thermal emission spectra from individual suspended carbon nanotubes.

We study the thermal emission spectra of individual suspended carbon nanotubes induced by electrical heating. Semiconducting and metallic devices exhibit different spectra, based on their distinctive band structures. These spectra are compared with the ideal blackbody emission spectrum. In the visible wavelength range, the thermal emission spectra of semiconducting devices agree well with Plancks law, while the spectra of metallic devices show an additional peak between 1.5 and 1.9 eV. In the near-infrared wavelength range, the semiconducting nanotubes exhibit a peak around 1 eV. These additional peaks are attributed to the E11M and E22SC transitions that are thermally driven under these high applied bias voltages. These peaks show a strong polarization dependence, while the blackbody tail is unpolarized, which provides further evidence for electron-hole recombination in thermal emission. For semiconducting devices, the temperature of the nanotube is fit to Plancks law and compared with the temperatures obtained from the G band and 2D band Raman downshifts, as well as the anti-Stokes/Stokes intensity ratio. For devices showing thermal non-equilibrium, the electron temperature agrees well with G+ downshift but deviates from G_ downshift.

Gate Voltage Controllable Non-Equilibrium and Non-Ohmic Behavior in Suspended Carbon Nanotubes

In this work, we measure the electrical conductance and temperature of individual, suspended quasi-metallic single-walled carbon nanotubes under high voltage biases using Raman spectroscopy, while varying the doping conditions with an applied gate voltage. By applying a gate voltage, the high-bias conductance can be switched dramatically between linear (Ohmic) behavior and nonlinear behavior exhibiting negative differential conductance (NDC). Phonon populations are observed to be in thermal equilibrium under Ohmic conditions but switch to nonequilibrium under NDC conditions. A typical Landauer transport model assuming zero bandgap is found to be inadequate to describe the experimental data. A more detailed model is presented, which incorporates the doping dependence in order to fit this data.

Thermoacoustic Transduction in Individual Suspended Carbon Nanotubes

We report an experimental measurement of the acoustic signal emitted from an individual suspended carbon nanotube (CNT) approximate 2 μm in length, 1 nm in diameter, and 10(-21) kg in mass. This system represents the smallest thermoacoustic system studied to date. By applying an AC voltage of 1.4 V at 8 kHz to the suspended CNT, we are able to detect the acoustic signal using a commercial microphone. The acoustic power detected is found to span a range from 0.1 to 2.4 attoWatts or 0.2 to 1 μPa of sound pressure. This corresponds to thermoacoustic efficiencies ranging from 0.007 to 0.6 Pa/W for the seven devices that were measured in this study. Here, the small lateral dimensions of these devices cause large heat losses due to thermal conduction, which result in the relatively small observed thermoacoustic efficiencies.

Rapid prototyping of three-dimensional microstructures from multiwalled carbon nanotubes

The authors report a method for creating three-dimensional carbon nanotube structures, whereby a focused laser beam is used to selectively burn local regions of a dense forest of multiwalled carbon nanotubes. Raman spectroscopy and scanning electron microscopy are used to quantify the threshold for laser burnout and depth of burnout. The minimum power density for burning carbon nanotubes in air is found to be 244μW∕μm2. We create various three-dimensional patterns using this method, illustrating its potential use for the rapid prototyping of carbon nanotube microstructures. Undercut profiles, changes in nanotube density, and nanoparticle formation are observed after laser surface treatment and provide insight into the dynamic process of the burnout mechanism.