JiHyun Lee

Magnetic ratchet for three-dimensional spintronic memory and logic

One of the key challenges for future electronic memory and logic devices is finding viable ways of moving from today’s two-dimensional structures, which hold data in an x–y mesh of cells, to three-dimensional structures in which data are stored in an x–y–z lattice of cells. This could allow a many-fold increase in performance. A suggested solution is the shift register—a digital building block that passes data from cell to cell along a chain. In conventional digital microelectronics, two-dimensional shift registers are routinely constructed from a number of connected transistors. However, for three-dimensional devices the added process complexity and space needed for such transistors would largely cancel out the benefits of moving into the third dimension. ‘Physical’ shift registers, in which an intrinsic physical phenomenon is used to move data near-atomic distances, without requiring conventional transistors, are therefore much preferred. Here we demonstrate a way of implementing a spintronic unidirectional vertical shift register between perpendicularly magnetized ferromagnets of subnanometre thickness, similar to the layers used in non-volatile magnetic random-access memory. By carefully controlling the thickness of each magnetic layer and the exchange coupling between the layers, we form a ratchet that allows information in the form of a sharp magnetic kink soliton to be unidirectionally pumped (or ‘shifted’) from one magnetic layer to another. This simple and efficient shift-register concept suggests a route to the creation of three-dimensional microchips for memory and logic applications.

Three dimensional magnetic nanowires grown by focused electron-beam induced deposition.

Control of the motion of domain walls in magnetic nanowires is at the heart of various recently proposed three-dimensional (3D) memory devices. However, fabricating 3D nanostructures is extremely complicated using standard lithography techniques. Here we show that highly pure 3D magnetic nanowires with aspect-ratios of ~100 can be grown using focused electron-beam-induced-deposition. By combining micromanipulation, Kerr magnetometry and magnetic force microscopy, we determine that the magnetisation reversal of the wires occurs via the nucleation and propagation of domain walls. In addition, we demonstrate that the magnetic switching of individual 3D nanostructures can be directly probed by magneto-optical Kerr effect.

Multi-bit operations in vertical spintronic shift registers

Spintronic devices have in general demonstrated the feasibility of non-volatile memory storage and simple Boolean logic operations. Modern microprocessors have one further frequently used digital operation: bit-wise operations on multiple bits simultaneously. Such operations are important for binary multiplication and division and in efficient microprocessor architectures such as reduced instruction set computing (RISC). In this paper we show a four-stage vertical serial shift register made from RKKY coupled ultrathin (0.9 nm) perpendicularly magnetised layers into which a 3-bit data word is injected. The entire four stage shift register occupies a total length (thickness) of only 16 nm. We show how under the action of an externally applied magnetic field bits can be shifted together as a word and then manipulated individually, including being brought together to perform logic operations. This is one of the highest level demonstrations of logic operation ever performed on data in the magnetic state and brings closer the possibility of ultrahigh density all-magnetic microprocessors.

Nanoscale thermoelectrical detection of magnetic domain wall propagation

In magnetic nanowires with perpendicular magnetic anisotropy (PMA) magnetic domain walls (DW) are narrow and can move rapidly driven by current induced torques. This enables important applications like high-density memories for which the precise detection of the position and motion of a propagating DW is of utmost interest. Todays DW detection tools are often limited in resolution, or acquisition speed, or can only be applied on specific materials. Here, we show that the anomalous Nernst effect provides a simple and powerful tool to precisely track the position and motion of a single DW propagating in a PMA nanowire. We detect field and current driven DW propagation in both metallic heterostructures and dilute magnetic semiconductors over a broad temperature range. The demonstrated spatial resolution below 20 nm is comparable to the DW width in typical metallic PMA systems.

Intra-wire coupling in segmented Ni/Cu nanowires deposited by electrodeposition

Segmented magnetic nanowires are a promising route for the development of three dimensional data storage techniques. Such devices require a control of the coercive field and the coupling mechanisms between individual magnetic elements. In our study, we investigate electrodeposited nanomagnets within host templates using vibrating sample magnetometry and observe a strong dependence between nanowire length and coercive field (25 nm-5 μm) and diameter (25-45 nm). A transition from a magnetization reversal through coherent rotation to domain wall propagation is observed at an aspect ratio of approximately 2. Our results are further reinforced via micromagnetic simulations and angle dependent hysteresis loops. The found behavior is exploited to create nanowires consisting of a fixed and a free segment in a spin-valve like structure. The wires are released from the membrane and electrically contacted, displaying a giant magnetoresistance effect that is attributed to individual switching of the coupled nanomagnets. We develop a simple analytical model to describe the observed switching phenomena and to predict stable and unstable regimes in coupled nanomagnets of certain geometries.

Systematic layer-by-layer characterization of multilayers for three-dimensional data storage and logic

Magnetic kink solitons are used as a probe to experimentally measure the layer-by-layer coercivity and interlayer coupling strength of an antiferromagnetically coupled perpendicularly magnetized Co multilayer. The magnetic response is well described by a nearest neighbor Ising macrospin model. By controlling the position of one, two or three solitons in the stack using globally applied magnetic fields, we successfully probe the switching of individual buried layers under different neighboring configurations, allowing us to access individual layers characteristic parameters. We found the coercivity to increase dramatically up the multilayer, while the interlayer coupling strength decreased slightly. We corroborate these findings with scanning transmission electron microscopy images where a degrading quality of the multilayer is observed. This method provides a very powerful tool to characterize the quality of individual layers in complex multilayers, without the need for depth-sensitive magnetic characterization equipment.

Magnetic Particle Nanosensing by Nucleation of Domain Walls in Ultra-Thin CoFeB/Pt Devices

A novel nanosensor is demonstrated based on domain-wall (DW) nucleation in perpendicular-anisotropy CoFeB/Pt components, with an electrical read-out based on the anomalous Hall effect. Notch-shaped constrictions within perpendicular CoFeB/Pt wires are used to control the local anisotropy. The successful detection of a single NdFeB microbead is demonstrated, based on the variations in DW nucleation in a notched nanowire in the presence of the bead. Maps of the sensor response obtained using scanning gate microscopy measurements are presented. We describe a number of potential advantages of the nucleation-sensing technique as compared with existing DW-based magnetic bead sensors using in-plane magnetized materials.

Magnetic Solitons in Superlattices

Magnetic solitons in antiferromagnetic superlattices can be used for vertical data transfer of information. In this chapter, we introduce this concept and summarise recent results of our group where controlled soliton nucleation and propagation was achieved.