Jincheng Zhang

A simple and efficient solar cell parameter extraction method from a single current-voltage curve

In this work, a simple and efficient method for the extraction of all the parameters of a solar cell from a single current-voltage (I-V) curve under the constant illumination level is proposed. With the help of the Lambert W function, the explicit analytic expression for I is obtained. By reducing the number of the parameters, the expression for I only depends on the ideality factor n, the series resistance Rs, and the shunt resistance Rsh. This analytic expression is directly used to fit the experimental data and extract the device parameters. This simple solar cell parameter extraction method can be directly applied for all kinds of solar cells whose I-V characteristics follow the single-diode model. The parameters of various solar devices including silicon solar cells, silicon solar modules, dye-sensitized solar cells, and organic solar cells with standalone, tandem, and multi-junction structures have been successfully extracted by using our proposed method.

AlGaN/GaN MOS-HEMT With

We have developed a novel AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor using a stack gate HfO₂/Al₂O₃ structure grown by atomic layer deposition. The stack gate consists of a thin HfO₂ (30-A) gate dielectric and a thin Al₂O₃ (20- A) interfacial passivation layer (IPL). For the 50-A stack gate, no measurable <i>C</i>-<i>V</i> hysteresis and a smaller threshold voltage shift were observed, indicating that a high-quality interface can be achieved using a Al₂O₃ IPL on an AlGaN substrate. Good surface passivation effects of the Al₂O₃ IPL have also been confirmed by pulsed gate measurements. Devices with 1- mum gate lengths exhibit a cutoff frequency (<i>fT</i>) of 12 GHz and a maximum frequency of oscillation (<i>f</i> _MAX) of 34 GHz, as well as a maximum drain current of 800 mA/mm and a peak transconductance of 150 mS/mm, whereas the gate leakage current is at least six orders of magnitude lower than that of the reference high-electron mobility transistors at a positive gate bias.

\hbox{HfO}_{2}

Nickel-cobalt oxides were prepared by coprecipitation of their hydroxides precursors and a following thermal treatment under a moderate temperature. The preformed nickel-cobalt bimetallic hydroxide exhibited a flower-like morphology with single crystalline nature and composed of many interconnected nanosheets. The ratio of Ni to Co in the oxides could easily be controlled by adjusting the composition of the original reactants for the preparation of hydroxide precursors. It was found that both the molecular ratio of Ni to Co and the annealing temperature had significant effects on their porous structure and electrochemical properties. The effect of the Ni/Co ratio on the pseudocapacitive properties of the binary oxide was investigated in this work. The binary metal oxide with the exact molar ratio of Ni:Co = 0.8:1 annealed at 300 °C, showing an optimum specific capacitance of 750 F/g. However, too high an annealing temperature would lead to a large crystal size, a low specific surface area, as well as a much lower pore volume. With the use of the binary metal oxide with Ni:Co = 0.8:1 and activated carbon as the positive and negative electrode, respectively, the assembled hybrid capacitor could exhibit a high-energy density of 34.9 Wh/kg at the power density of 875 W/kg and long cycling life (86.4% retention of the initial value after 10000 cycles).

Dielectric and

Gate-recessed AlGaN/AlN/GaN metal-oxide-semiconductor heterostructure high-mobility transistors (MOS-HEMTs) on SiC substrate are fabricated. The device with a gate length of 0.6 μm and a gate periphery of 100 μm exhibits a maximum dc drain current density of 1.59 A/mm at VGS = 3 V with an extrinsic transconductance (gm) of 374 mS/mm. An extrinsic current gain cutoff frequency (fT) of 19 GHz and a maximum oscillation frequency (fmax) of 50 GHz are deduced from S-parameter measurements. The output power density is 13 W/mm, and the associated power-added efficiency is 73% at 4-GHz frequency and 45-V drain bias. The power performance is comparable to state-of-the art AlGaN/GaN HEMTs, which demonstrates the great potential of gate-recessed MOS-HEMTs as a very promising alternative to GaN HEMTs.

\hbox{Al}_{2}\hbox{O}_{3}

We have grown horizontal oriented, high growth rate, well-aligned polar (0001) single crystalline GaN nanowires and high-density and highly aligned GaN nonpolar (11-20) nanowires on r-plane substrates by metal organic chemical vapor deposition. It can be found that the polar nanowires showed a strong yellow luminescence (YL) intensity compared with the nonpolar nanowires. The different trends of the incorporation of carbon in the polar, nonpolar, and semipolar GaN associated with the atom bonding structure were discussed and proved by energy-dispersive X-ray spectroscopy, suggesting that C-involved defects are the origin responsible for the YL in GaN nanowires.

Interfacial Passivation Layer Grown by Atomic Layer Deposition

A self-terminating gate recess etching technique is first proposed to fabricate normally off AlGaN/GaN MOSFET. The gate recess process includes a thermal oxidation of the AlGaN barrier layer for 40 min at 615°C followed by 45-min etching in potassium hydroxide solution at 70°C, which is found to be self-terminated at the AlGaN/GaN interface with negligible effect on the underlying GaN layer, manifesting itself easy to control, highly repeatable, and promising for industrialization. The fabricated device based on this technique with atomic layer deposition Al2O3 as gate insulator exhibits a threshold voltage as high as 3.2 V with a maximum drain current over 200 mA/mm and a 60% increased breakdown voltage than that of the conventional high electron mobility transistors.

Binary Nickel–Cobalt Oxides Electrode Materials for High-Performance Supercapacitors: Influence of its Composition and Porous Nature

A facile while flexible approach to size-controllable high-purity colloidal gold nanoplates has been presented. By adjusting the quantity of seeds and I(-) through a seed-mediated, cetyltrimethylammonium bromide (CTABr)-assisted synthetic system, the edge length of the gold nanoplates can be adjusted from 140 to 30 nm without changing their thickness or crystal structure. By simply increasing the ion concentration of the reaction solution, the as-prepared gold nanoplates can be deposited due to the different electrostatic aggregation effects between nanoplates and spherical nanoparticles. Effective storage methods to keep the structural and optical stability of these gold nanoplates are also proposed.

High-Performance Microwave Gate-Recessed AlGaN/AlN/GaN MOS-HEMT With 73% Power-Added Efficiency

High quality, nearly lattice-matched InAlN/GaN/InAlN/GaN double-channel heterostructures were grown on sapphire by pulsed-metal-organic-chemical-vapor-deposition (PMOCVD). High electron mobility of 1414 cm2/Vs was achieved along with a two-dimensional-electron-gas density of 2.55 × 1013 cm−2. We attribute it to the high quality PMOCVD-grown InAlN barriers and, additionally, to the novel GaN layer growth between two InAlN barriers, which consists of a thin GaN spacer to prevent indium-redistribution and indium-cluster formation during the subsequent growth and a relatively thick GaN channel to enhance electron mobility. High-electron-mobility-transistors fabricated on these heterostructures with 0.8-μm-length gate exhibit a maximum drain current of 906 mA/mm and a transconductance of 186 mS/mm.

Yellow luminescence of polar and nonpolar GaN nanowires on r-plane sapphire by metal organic chemical vapor deposition.

This paper presents an improved negative differential mobility model for GaN and AlGaN to simulate GaN Gunn diodes at terahertz frequencies. Temperature-dependent parameters vsat, Ec, α, δ, and γ are proposed to improve the accuracy of the mobility model at high temperatures. In particular, an Al-composition-related coefficient fZ(x) and a random-alloy-potential-related factor falloy(p) are developed for an AlGaN mobility model. Simulation results show that notched doping GaN and AlGaN/GaN heterostructure Gunn diodes, both including 0.6-m transit and 0.2-m electron launching regions, have the capability of generating fundamental frequencies of 352-508 and 332-469 GHz, respectively, with a maximum radio-frequency (RF) power density of ~1010 W/cm3 and RF efficiency of over 2% accompanied with a shift of an oscillation mode from a dipole-domain mode toward an accumulation mode as the temperature rises from 300 to 500 K.

Fabrication of Normally Off AlGaN/GaN MOSFET Using a Self-Terminating Gate Recess Etching Technique

We report on a growth of nearly lattice-matched InAlN/GaN heterostructures on 4H–SiC substrates by pulsed metal organic chemical vapor deposition, and an excellent device characteristic of high electron mobility transistors (HEMTs) fabricated on these InAlN/GaN heterostructures. The electron mobility is 1032 cm2/V s together with a high two-dimensional-electron-gas density of 1.59×1013 cm−2 for the In0.17Al0.83N/AlN heterostructures. HEMTs with gate dimensions of 0.5×50 μm2 and 3 μm source-drain distance exhibits a maximum drain current of 1 A/mm, a maximum extrinsic transconductance of 310 mS/mm, and current gain and maximum oscillation cutoff frequencies of 18 GHz and 39 GHz, respectively.