Jinglei Chen

Molecular-beam epitaxy of monolayer and bilayer WSe2: a scanning tunneling microscopy/spectroscopy study and deduction of exciton binding energy

Interest in two-dimensional (2D) transition-metal dichalcogenides (TMDs) has prompted some recent efforts to grow ultrathin layers of these materials epitaxially using molecular-beam epitaxy (MBE). However, growths of monolayer (ML) and bilayer (BL) WSe2—an important member of the TMD family—by the MBE method remain uncharted, probably because of the difficulty in generating tungsten fluxes from the elemental source. In this work, we present a scanning tunneling microscopy and spectroscopy (STM/S) study of MBE-grown WSe2 ML and BL, showing atomically flat epifilm with no domain boundary (DB) defect. This contrasts epitaxial MoSe2 films grown by the same method, where a dense network of the DB defects is present. The STS measurements of ML and BL WSe2 domains of the same sample reveal not only the bandgap narrowing upon increasing the film thickness from ML to BL, but also a band-bending effect across the boundary (step) between ML and BL domains. This band-bending appears to be dictated by the edge states at steps of the BL islands. Finally, comparison is made between the STS-measured electronic bandgaps with the exciton emission energies measured by photoluminescence, and the exciton binding energies in ML and BL WSe2 (and MoSe2) are thus estimated.

Multivalency-Driven Formation of Te-Based Monolayer Materials: A Combined First-Principles and Experimental study

1 International Laboratory for Quantum Functional Material s of Henan, and School of Physics and Engineering, Zhengzhou Universit y, Zhengzhou 450001, China 2 Department of Physics, Hanyang University, 17 Haengdang-D ong, Seongdong-Ku, Seoul 133-791, Korea 3 Department of Chemistry, University College London, Londo n WC1E 6BT, United Kingdom 4 Department of Materials Science and Engineering, Universi ty of Utah, Salt Lake City, Utah 84112, USA 5 ICQD, Hefei National Laboratory for Physical Sciences at th e Microscale, and Synergetic Innovation Center of Quantum Information an d Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China (Dated: February 1, 2017)Contemporary science is witnessing a rapid expansion of the two-dimensional (2D) materials family, each member possessing intriguing emergent properties of fundamental and practical importance. Using the particle-swarm optimization method in combination with first-principles density functional theory calculations, here we predict a new category of 2D monolayers named tellurene, composed of the metalloid element Te, with stable 1T-MoS_{2}-like (α-Te), and metastable tetragonal (β-Te) and 2H-MoS_{2}-like (γ-Te) structures. The underlying formation mechanism is inherently rooted in the multivalent nature of Te, with the central-layer Te behaving more metal-like (e.g., Mo), and the two outer layers more semiconductorlike (e.g., S). We also show that the α-Te phase can be spontaneously obtained from the magic thicknesses divisible by three layers truncated along the [001] direction of the trigonal structure of bulk Te, and both the α- and β-Te phases possess electron and hole mobilities much higher than MoS_{2}. Furthermore, we present preliminary but convincing experimental evidence for the layering behavior of Te on HOPG substrates, and predict the importance of multivalency in the layering behavior of Se. These findings effectively extend the realm of 2D materials to group-VI elements.

Line and Point Defects in MoSe2 Bilayer Studied by Scanning Tunneling Microscopy and Spectroscopy.

Bilayer (BL) MoSe2 films grown by molecular-beam epitaxy (MBE) are studied by scanning tunneling microscopy and spectroscopy (STM/S). Similar to monolayer (ML) films, networks of inversion domain boundary (DB) defects are observed both in the top and bottom layers of BL MoSe2, and often they are seen spatially correlated such that one is on top of the other. There are also isolated ones in the bottom layer without companion in the top-layer and are detected by STM/S through quantum tunneling of the defect states through the barrier of the MoSe2 ML. Comparing the DB states in BL MoSe2 with that of ML film reveals some common features as well as differences. Quantum confinement of the defect states is indicated. Point defects in BL MoSe2 are also observed by STM/S, where ionization of the donor defect by the tip-induced electric field is evidenced. These results are of great fundamental interests as well as practical relevance of devices made of MoSe2 ultrathin layers.

Observation of intervalley quantum interference in epitaxial monolayer tungsten diselenide

The extraordinary electronic structures of monolayer transition metal dichalcogenides, such as the spin–valley-coupled band edges, have sparked great interest for potential spintronic and valleytronic applications based on these two-dimensional materials. In this work, we report the experimental observation of quasi-particle interference patterns in monolayer WSe2 using low-temperature scanning tunnelling spectroscopy. We observe intervalley quantum interference involving the Q valleys in the conduction band due to spin-conserving scattering processes, while spin-flipping intervalley scattering is absent. Our results establish unequivocally the presence of spin–valley coupling and affirm the large spin splitting at the Q valleys. Importantly, the inefficient spin-flipping scattering implies long valley and spin lifetime in monolayer WSe2, which is a key figure of merit for valley-spintronic applications.

Molecular-beam epitaxy of monolayer MoSe2: growth characteristics and domain boundary formation

Monolayer (ML) transition metal dichalcogenides (TMDs) are of great research interest due to their potential use in ultrathin electronic and optoelectronic applications. They show promise in new concept devices in spintronics and valleytronics. Here we present a growth study by molecular-beam epitaxy of ML and sub-ML MoSe2, an important member of TMDs, revealing its unique growth characteristics as well as the formation processes of domain boundary (DB) defects. A dramatic effect of growth temperature and post-growth annealing on DB formation is uncovered.