Maohai Xie

Dense Network of One-Dimensional Midgap Metallic Modes in Monolayer MoSe2 and Their Spatial Undulations

We report the observation of a dense triangular network of one-dimensional (1D) metallic modes in a continuous and uniform monolayer of MoSe(2) grown by molecular-beam epitaxy. High-resolution transmission electron microscopy and scanning tunneling microscopy and spectroscopy studies show that these 1D modes are midgap states at inversion domain boundaries. Scanning tunneling microscopy and spectroscopy measurements further reveal intensity undulations of the metallic modes, presumably arising from the superlattice potentials due to the moiré pattern and the quantum confinement effect. A dense network of the metallic modes with a high density of states is of great potential for heterocatalysis applications. The interconnection of such midgap 1D conducting channels may also imply new transport behaviors distinct from the 2D bulk.

High-field linear magneto-resistance in topological insulator Bi2Se3 thin films

Linear magneto-resistance is observed in high magnetic field in topological insulator Bi2Se3 films. As revealed by tilted magnetic field measurement, this linear magneto-resistance is associated with the gapless topological surface states and of quantum origin. In the ultra-thin limit, the inter-surface tunneling induced surface state gap opening quenches the linear magneto-resistance. Instead, weak negative magneto-resistance is observed in high magnetic fields in ultra-thin films.

Molecular-beam epitaxy of monolayer and bilayer WSe2: a scanning tunneling microscopy/spectroscopy study and deduction of exciton binding energy

Interest in two-dimensional (2D) transition-metal dichalcogenides (TMDs) has prompted some recent efforts to grow ultrathin layers of these materials epitaxially using molecular-beam epitaxy (MBE). However, growths of monolayer (ML) and bilayer (BL) WSe2—an important member of the TMD family—by the MBE method remain uncharted, probably because of the difficulty in generating tungsten fluxes from the elemental source. In this work, we present a scanning tunneling microscopy and spectroscopy (STM/S) study of MBE-grown WSe2 ML and BL, showing atomically flat epifilm with no domain boundary (DB) defect. This contrasts epitaxial MoSe2 films grown by the same method, where a dense network of the DB defects is present. The STS measurements of ML and BL WSe2 domains of the same sample reveal not only the bandgap narrowing upon increasing the film thickness from ML to BL, but also a band-bending effect across the boundary (step) between ML and BL domains. This band-bending appears to be dictated by the edge states at steps of the BL islands. Finally, comparison is made between the STS-measured electronic bandgaps with the exciton emission energies measured by photoluminescence, and the exciton binding energies in ML and BL WSe2 (and MoSe2) are thus estimated.

Synthesizing tungsten oxide nanowires by a thermal evaporation method

Tungsten oxide W18O49 nanowires with diameters of 10–20nm were synthesized with high yield by thermal evaporation in a tube furnace. By heating tungsten trioxide powder at 900°C in vacuum (5×10−3torr), W18O49 nanowires with diameters of 10–20nm and lengths up to micrometers were produced with high yield on the Au-coated Si substrates located in the low temperature zone (550–600°C) of the furnace. The morphology, composition, and crystal structure of the nanowires were characterized by various methods. The conditions and the mechanism of W18O49 nanowire growth are discussed.

Tungsten oxide nanowires synthesized by a catalyst-free method at low temperature

We report the synthesis of tungsten oxide W18O49 nanowires by thermal evaporation at low temperature without using catalysts. By placing tungsten powder in the high temperature zone at 650 °C and tungsten substrate in the low temperature zone at 400 °C of a tube furnace, W18O49 nanowires with diameters of 10–50 nm are produced with high yield. The nanowires extend to 500–1500 nm length, and the cross-sectional shapes are circular or polygonal. The roles of the source material, the pre-oxide layer on the substrate and the temperature of the reactor are also investigated. It is shown that the presence of oxygen on the W surface is essential for tungsten oxide nanowire growth.

Multivalency-Driven Formation of Te-Based Monolayer Materials: A Combined First-Principles and Experimental study

1 International Laboratory for Quantum Functional Material s of Henan, and School of Physics and Engineering, Zhengzhou Universit y, Zhengzhou 450001, China 2 Department of Physics, Hanyang University, 17 Haengdang-D ong, Seongdong-Ku, Seoul 133-791, Korea 3 Department of Chemistry, University College London, Londo n WC1E 6BT, United Kingdom 4 Department of Materials Science and Engineering, Universi ty of Utah, Salt Lake City, Utah 84112, USA 5 ICQD, Hefei National Laboratory for Physical Sciences at th e Microscale, and Synergetic Innovation Center of Quantum Information an d Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China (Dated: February 1, 2017)Contemporary science is witnessing a rapid expansion of the two-dimensional (2D) materials family, each member possessing intriguing emergent properties of fundamental and practical importance. Using the particle-swarm optimization method in combination with first-principles density functional theory calculations, here we predict a new category of 2D monolayers named tellurene, composed of the metalloid element Te, with stable 1T-MoS_{2}-like (α-Te), and metastable tetragonal (β-Te) and 2H-MoS_{2}-like (γ-Te) structures. The underlying formation mechanism is inherently rooted in the multivalent nature of Te, with the central-layer Te behaving more metal-like (e.g., Mo), and the two outer layers more semiconductorlike (e.g., S). We also show that the α-Te phase can be spontaneously obtained from the magic thicknesses divisible by three layers truncated along the [001] direction of the trigonal structure of bulk Te, and both the α- and β-Te phases possess electron and hole mobilities much higher than MoS_{2}. Furthermore, we present preliminary but convincing experimental evidence for the layering behavior of Te on HOPG substrates, and predict the importance of multivalency in the layering behavior of Se. These findings effectively extend the realm of 2D materials to group-VI elements.

Line and Point Defects in MoSe2 Bilayer Studied by Scanning Tunneling Microscopy and Spectroscopy.

Bilayer (BL) MoSe2 films grown by molecular-beam epitaxy (MBE) are studied by scanning tunneling microscopy and spectroscopy (STM/S). Similar to monolayer (ML) films, networks of inversion domain boundary (DB) defects are observed both in the top and bottom layers of BL MoSe2, and often they are seen spatially correlated such that one is on top of the other. There are also isolated ones in the bottom layer without companion in the top-layer and are detected by STM/S through quantum tunneling of the defect states through the barrier of the MoSe2 ML. Comparing the DB states in BL MoSe2 with that of ML film reveals some common features as well as differences. Quantum confinement of the defect states is indicated. Point defects in BL MoSe2 are also observed by STM/S, where ionization of the donor defect by the tip-induced electric field is evidenced. These results are of great fundamental interests as well as practical relevance of devices made of MoSe2 ultrathin layers.

Disorder-induced linear magnetoresistance in (221) topological insulator Bi2Se3 films

A linear magnetoresistance (LMR) with strong temperature dependence and peculiar non-symmetry with respect to the applied magnetic field is observed in high-index (221) Bi2Se3 films. Different from the LMR observed in the previous studies which emphasize the role of gapless linear energy dispersion, this LMR is of disorder origin and possibly arises from the electron surface accumulation layer of the film. Besides, an abnormal negative magneto-resistance that shows a non-monotonic temperature dependence and persists even at high temperatures and in strong magnetic fields is also observed.

Long cycle life of CoMn2O4 lithium ion battery anodes with high crystallinity

CoMn2O4 nanomaterials are prepared by a low temperature precipitation route employing metal acetates and NaOH. Structural changes, induced by different annealing temperatures, are comprehensively analyzed by X-ray powder diffraction and Raman spectroscopy. With rising annealing temperature the crystal lattice of CoMn2O4 undergoes changes ; AO4 tetrahedra expand due to thermally induced substitution of Co2+ by larger Mn2+ metal ions on the A-site of the spinel structure, while in contrast, BO6 octahedra shrink since the B-site becomes partially occupied by smaller Co3+ metal ions on account of the migrated Mn ions. CoMn2O4 particle sizes are easily fine-tuned by applying different annealing temperatures ; the particle size increases with increasing annealing temperature. During the battery operation, pulverization and reduction of particle sizes occurs regardless of the initial size of the particles, but the degree of division of the particles during the operation is dependent on the initial particle properties. Thus, contrary to the common assumption that nanostructuring of the anode material improves the battery performance, samples with the largest particle sizes exhibit excellent performance with a capacity retention of 104% after 1000 cycles (compared to the 2nd cycle).

Observation of intervalley quantum interference in epitaxial monolayer tungsten diselenide

The extraordinary electronic structures of monolayer transition metal dichalcogenides, such as the spin–valley-coupled band edges, have sparked great interest for potential spintronic and valleytronic applications based on these two-dimensional materials. In this work, we report the experimental observation of quasi-particle interference patterns in monolayer WSe2 using low-temperature scanning tunnelling spectroscopy. We observe intervalley quantum interference involving the Q valleys in the conduction band due to spin-conserving scattering processes, while spin-flipping intervalley scattering is absent. Our results establish unequivocally the presence of spin–valley coupling and affirm the large spin splitting at the Q valleys. Importantly, the inefficient spin-flipping scattering implies long valley and spin lifetime in monolayer WSe2, which is a key figure of merit for valley-spintronic applications.