Jiyoon Kang

The effect of small pyramid texturing on the enhanced passivation and efficiency of single c-Si solar cells

In this work, a simple method to form small random pyramid texturing (0.5–2 μm size) is proposed to enhance the surface passivation of commercial p-type Cz-Si wafers. Small pyramid texturing was generated with chemical nano-masking for anisotropic etching. The surface recombination velocity obtained after the passivation of the thermal oxide layer reduced from 65 and 10 cm s−1 for the large pyramids (10–15 μm size) and small pyramid (0.5–2 μm) texturing respectively. The solar cell fabricated with large pyramid texturing resulted in an efficiency of 17.82% with a current density (JSC) of 36.91 mA cm−2, an open circuit voltage (VOC) of 620 mV whereas small pyramid texturing resulted in an efficiency of 18.5% with JSC of 37.6 mA cm−2 and VOC of 628 mV. The low surface recombination velocity increases the VOC by 8 mV. The small pyramid textured wafers are found to enhance the quantum efficiency performance in both short and long wavelength regions.

Boron diffused layer optimization by metal impurity concentration control using gettering process for n-type c-Si solar cell applications

In this paper, boron diffused layer optimization was described by metal impurity concentration control using gettering process. Boron diffusion was performed using BBr3 diffusion furnace with varying cooling rate and treated Rs with acid etching. The effect of gettering in the diffused layer was analyzed using SIMS and QSS-PC method, where by metal impurity and boron concentration and saturation current density (J0). Metal and boron retained dose was decreased from 2.04 × 10¹⁴ to 6.52 × 10¹³ atoms/cc, 1.2 × 10²⁰ to 3.54 × 10¹⁹ atoms/cc. Metal impurity and boron concentration determined SRV, MCLT, Jo. and solar cell output characteristics.

A Review on Silicon Oxide Sureface Passivation for High Efficiency Crystalline Silicon Solar Cell

Minimizing the carrier recombination and electrical loss through surface passivation is required for high efficiency c-Si solar cell. Usually, SiNX, SiOX, SiONX and AlOX layers are used as passivation layer in solar cell application. Silicon oxide layer is one of the good passivation layer in Si based solar cell application. It has good selective carrier, low interface state density, good thermal stability and tunneling effect. Recently tunneling based passivation layer is used for high efficiency Si solar cell such as HIT, TOPCon and TRIEX structure. In this paper, we focused on silicon oxide grown by various the method (thermal, wet-chemical, plasma) and passivation effect in c-Si solar cell.