Jochen Feichtinger

A New Mass Production Technology for High-Efficiency Thin-Film CIS-Absorber Formation

A new mass production technology for CIS-absorber formation yielding high-average module efficiencies is introduced. A novel custom-designed oven very successfully exploits the principle of forced convection during heating, CIS formation reaction, and cooling. Cu(In,Ga)(Se,S) 2 absorbers are formed by metal precursor deposition on soda lime glass followed by reaction in selenium/sulfur atmosphere. Processing is performed in a multiple-chamber equipment which handles corrosive, flammable, and toxic process gases from atmospheric pressure to vacuum at high durability. The substrates (size: 50 cm × 120 cm) are processed in batches up to 102 substrates, applying forced convection for very homogenous heat transfer and high heating and cooling rates. Multiple-chamber design and batch size yield high throughput at cycle times above 1 h. This approach combines the specific advantages of batch type and inline processing. An excellent average efficiency of 14.3% with a narrow distribution (+/-0.31%) and a peak efficiency of 15.1% is shown with this technology. Module characteristic distributions during pilot production are presented. Detailed layer analytics is discussed. This straightforward reliable mass production technology is a key for highest module performance and for upscaling. Module efficiencies of 17% can be reached, enabling production costs below 0.38 US

Innovative front end processing for next generation CIS module production

/Wp in a projected GWp plant.

METHOD AND APPARATUS FOR SURFACE TREATMENT OF CONTAINERS OR OBJECTS

The successful implementation of two new process steps into an existing Cu(In,Ga)(Se,S)2 (CIS) production line was achieved. One, a newly developed back contact, aims for a better process control, as far as the transition of the metallic back contact to a selenide/metal bi-layer during CIS-formation is concerned. This was done by the introduction of a corrosion resistant barrier layer, which reliably stops chalcogenide diffusion from the top. By doing so, a back contact layer is obtained, with well defined properties in which the functionalities of the back electrode now is divided between two separated layers. The other development presented in this paper, tackles the complexity of CIS-module production and the interferences between the different processes required. By shifting the P1-scribing process after i-ZnO deposition, the process sequence for CIS is simplified and it will be shown that this new P1i exhibits superior properties as far as CIS morphology and groove quality is concerned.