Axel Jasenek

A New Mass Production Technology for High-Efficiency Thin-Film CIS-Absorber Formation

A new mass production technology for CIS-absorber formation yielding high-average module efficiencies is introduced. A novel custom-designed oven very successfully exploits the principle of forced convection during heating, CIS formation reaction, and cooling. Cu(In,Ga)(Se,S) 2 absorbers are formed by metal precursor deposition on soda lime glass followed by reaction in selenium/sulfur atmosphere. Processing is performed in a multiple-chamber equipment which handles corrosive, flammable, and toxic process gases from atmospheric pressure to vacuum at high durability. The substrates (size: 50 cm × 120 cm) are processed in batches up to 102 substrates, applying forced convection for very homogenous heat transfer and high heating and cooling rates. Multiple-chamber design and batch size yield high throughput at cycle times above 1 h. This approach combines the specific advantages of batch type and inline processing. An excellent average efficiency of 14.3% with a narrow distribution (+/-0.31%) and a peak efficiency of 15.1% is shown with this technology. Module characteristic distributions during pilot production are presented. Detailed layer analytics is discussed. This straightforward reliable mass production technology is a key for highest module performance and for upscaling. Module efficiencies of 17% can be reached, enabling production costs below 0.38 US

A small size high pressure sensor based on metal thin film technology

/Wp in a projected GWp plant.

Innovative front end processing for next generation CIS module production

In this contribution we present the basic design of the new miniaturized high pressure sensor chip based on metal thin film technology (MFT). The steps of chip fabrication will be addressed, and compared with alternative processes. The product performance will be demonstrated by characterization data.

Dry vacuum buffers for industrial chalcopyrite absorbers from a sequential absorber process route

The successful implementation of two new process steps into an existing Cu(In,Ga)(Se,S)2 (CIS) production line was achieved. One, a newly developed back contact, aims for a better process control, as far as the transition of the metallic back contact to a selenide/metal bi-layer during CIS-formation is concerned. This was done by the introduction of a corrosion resistant barrier layer, which reliably stops chalcogenide diffusion from the top. By doing so, a back contact layer is obtained, with well defined properties in which the functionalities of the back electrode now is divided between two separated layers. The other development presented in this paper, tackles the complexity of CIS-module production and the interferences between the different processes required. By shifting the P1-scribing process after i-ZnO deposition, the process sequence for CIS is simplified and it will be shown that this new P1i exhibits superior properties as far as CIS morphology and groove quality is concerned.

ILGAR In2S3 buffer layers for Cd‐free Cu(In,Ga)(S,Se)2 solar cells with certified efficiencies above 16%

First results are presented for chalcopyrite solar cells with Cd-free dry buffer layers prepared by two different vacuum deposition techniques on sequentially processed Cu(In, Ga)(S, Se)2 absorbers. The deposition techniques are namely thermal evaporation of In2S3 compound powder and the reactive sputtering of Zn(O, S) layers. Both approaches are suitable for an in-line assembly into an industrial production line. The influence of the variation of process parameters such as buffer layer thickness and annealing time on current-voltage characteristics and quantum efficiency is shown. Best cell results exceed 14% conversion efficiency for the In2S3 approach (>11% for the Zn(O, S) approach) which is comparable but slightly less than the standard CdS reference cells (>15%).