Johann Osmond

Optical nano-imaging of gate-tunable graphene plasmons

The ability to manipulate optical fields and the energy flow of light is central to modern information and communication technologies, as well as quantum information processing schemes. However, because photons do not possess charge, a way of controlling them efficiently by electrical means has so far proved elusive. A promising way to achieve electric control of light could be through plasmon polaritons—coupled excitations of photons and charge carriers—in graphene. In this two-dimensional sheet of carbon atoms, it is expected that plasmon polaritons and their associated optical fields can readily be tuned electrically by varying the graphene carrier density. Although evidence of optical graphene plasmon resonances has recently been obtained spectroscopically, no experiments so far have directly resolved propagating plasmons in real space. Here we launch and detect propagating optical plasmons in tapered graphene nanostructures using near-field scattering microscopy with infrared excitation light. We provide real-space images of plasmon fields, and find that the extracted plasmon wavelength is very short—more than 40 times smaller than the wavelength of illumination. We exploit this strong optical field confinement to turn a graphene nanostructure into a tunable resonant plasmonic cavity with extremely small mode volume. The cavity resonance is controlled in situ by gating the graphene, and in particular, complete switching on and off of the plasmon modes is demonstrated, thus paving the way towards graphene-based optical transistors. This successful alliance between nanoelectronics and nano-optics enables the development of active subwavelength-scale optics and a plethora of nano-optoelectronic devices and functionalities, such as tunable metamaterials, nanoscale optical processing, and strongly enhanced light–matter interactions for quantum devices and biosensing applications.

42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide

A compact pin Ge photodetector is integrated in submicron SOI rib waveguide. The detector length is reduced down to 15 microm using butt coupling configuration which is sufficient to totally absorb light at the wavelength of 1.55 microm. A -3 dB bandwidth of 42 GHz has been measured at a 4V reverse bias with a responsivity as high as 1 A/W at the wavelength of 1.55 microm and a low dark current density of 60 mA/cm(2). At a wavelength of 1.52 microm, a responsivity of 1 A/W is obtained under -0.5 V bias. The process is fully compatible with CMOS technology.

Zero-bias 40Gbit/s germanium waveguide photodetector on silicon

We report on lateral pin germanium photodetectors selectively grown at the end of silicon waveguides. A very high optical bandwidth, estimated up to 120GHz, was evidenced in 10 µm long Ge photodetectors using three kinds of experimental set-ups. In addition, a responsivity of 0.8 A/W at 1550 nm was measured. An open eye diagrams at 40Gb/s were demonstrated under zero-bias at a wavelength of 1.55 µm.

Universal Distance-Scaling of Nonradiative Energy Transfer to Graphene

The near-field interaction between fluorescent emitters and graphene exhibits rich physics associated with local dipole-induced electromagnetic fields that are strongly enhanced due to the unique properties of graphene. Here, we measure emitter lifetimes as a function of emitter-graphene distance d, and find agreement with a universal scaling law, governed by the fine-structure constant. The observed energy transfer rate is in agreement with a 1/d(4) dependence that is characteristic of two-dimensional lossy media. The emitter decay rate is enhanced 90 times (energy transfer efficiency of ~99%) with respect to the decay in vacuum at distances d ≈ 5 nm. This high energy transfer rate is mainly due to the two-dimensionality and gapless character of the monatomic carbon layer. Graphene is thus shown to be an extraordinary energy sink, holding great potential for photodetection, energy harvesting, and nanophotonics.

Ultralow dark current Ge/Si(100) photodiodes with low thermal budget

Vertical incidence photodiodes were fabricated from Ge grown epitaxially on Si(100) by low-energy plasma-enhanced chemical vapor deposition. Consideration of the energy band profiles of n-i-p and p-i-n heterostructures, and optimization of growth processes and thermal budget, allowed the performance of Ge photodectors integrated on Si(100) substrates to be optimized. Record low dark current density of Js=4.1×10−5 A/cm2 and external quantum efficiency at 1550 nm of η=32% were measured.

Time-domain separation of optical properties from structural transitions in resonantly bonded materials

The extreme electro-optical contrast between crystalline and amorphous states in phase-change materials is routinely exploited in optical data storage and future applications include universal memories, flexible displays, reconfigurable optical circuits, and logic devices. Optical contrast is believed to arise owing to a change in crystallinity. Here we show that the connection between optical properties and structure can be broken. Using a combination of single-shot femtosecond electron diffraction and optical spectroscopy, we simultaneously follow the lattice dynamics and dielectric function in the phase-change material Ge2Sb2Te5 during an irreversible state transformation. The dielectric function changes by 30% within 100 fs owing to a rapid depletion of electrons from resonantly bonded states. This occurs without perturbing the crystallinity of the lattice, which heats with a 2-ps time constant. The optical changes are an order of magnitude larger than those achievable with silicon and present new routes to manipulate light on an ultrafast timescale without structural changes.

Quantum-confined Stark effect measurements in Ge/SiGe quantum-well structures.

We investigate the room-temperature quantum-confined Stark effect in Ge/SiGe multiple quantum wells (MQWs) grown by low-energy plasma-enhanced chemical vapor deposition. The active region is embedded in a p-i-n diode, and absorption spectra at different reverse bias voltages are obtained from optical transmission, photocurrent, and differential transmission measurements. The measurements provide accurate values of the fraction of light absorbed per well of the Ge/SiGe MQWs. Both Stark shift and reduction of exciton absorption peak are observed. Differential transmission indicates that there is no thermal contribution to these effects.

Optical switching at 1.55 μm in silicon racetrack resonators using phase change materials

An optical switch operating at a wavelength of 1.55 μm and showing a 12 dB modulation depth is introduced. The device is implemented in a silicon racetrack resonator using an overcladding layer of the phase change data storage material Ge2Sb2Te5, which exhibits high contrast in its optical properties upon transitions between its crystalline and amorphous structural phases. These transitions are triggered using a pulsed laser diode at λ = 975 nm and used to tune the resonant frequency of the resonator and the resultant modulation depth of the 1.55 μm transmitted light.

Heterojunction photodiodes fabricated from Ge/Si (1 0 0) layers grown by low-energy plasma-enhanced CVD

We have fabricated a series of p-i-n Ge/Si heterojunction photodetectors with different thicknesses of the nominally intrinsic Ge layer. Epitaxial Ge was deposited on Si(1 0 0) using low-energy plasma-enhanced CVD (LEPECVD) followed by cyclic annealing. The residual tensile strain

40 Gb/s surface-illuminated Ge-on-Si photodetectors

This paper reports on surface illuminated Ge photodetectors monolithically integrated on Si substrate operating in the C and L wavelength bands. The responsivity at a wavelength of 1.5 μm ranges from 0.08 to 0.21 A/W without bias voltage for Ge mesa diameter ranging from 10 to 25 μm, respectively. The measured −3 dB cut-off frequency is as high as 49 GHz under a reverse bias of 5 V at a wavelength of 1.5 μm. An open eye diagram up to 40 Gbit/s is also demonstrated.