Johannes Borngraber

A 0.13

A 0.13 µm SiGe BiCMOS technology for millimeter wave applications is presented. This technology features high-speed HBTs (f<inf>T</inf>=240 GHz, f<inf>max</inf>=330 GHz, BV<inf>CEO</inf>=1.7 V) along with high-voltage HBTs (f<inf>T</inf>=50 GHz, f<inf>max</inf>=130 GHz, BV<inf>CEO</inf>=3.7 V) integrated in a dual-gate, triple-well RF-CMOS process. Ring oscillator gate delays of 2.9 ps, low-noise amplifiers for 122 GHz, and LC oscillators for frequencies above 200 GHz are demonstrated.

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An integrated PLL aimed at wireless transceivers in the unlicensed band from 59GHz to 64GHz is described. The PLL was fabricated in a SiGe:C BiCMOS technology with both f/sub T//f/sub max/=200GHz. The measured PLL lock range is from 53.3GHz to 55.7GHz. It operates from a 3V supply except for a first divide-by-two stage which requires a 5V supply. Total power consumption is 895mW.

SiGe BiCMOS Technology Featuring f

This paper presents a SiGe differential low-noise amplifier (LNA) for the V-band. The measured gain at 60 GHz is 18 dB, and the input return loss is below -15 dB. The 3-dB bandwidth is from 49 GHz to 71 GHz. Measured and simulated S-parameters agree well over the whole range. The LNA draws 30 mA from a 2.2 V supply. It facilitates the design of a fully integrated WLAN receiver in the 57-64 GHz band.

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This paper presents the design and measurement of key circuit building blocks for a high-data-rate transceiver in the 60 GHz band. The adopted modulation scheme is ASK, for a simple configuration with high data rate. The circuits presented are: LNA, oscillator, mixer, modulator and demodulator. The circuits are fabricated in a 0.25 /spl mu/m SiGe:C BiCMOS technology.

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A 0.13 µm SiGe BiCMOS technology for millimeter wave applications is presented. This technology features high-speed HBTs (f T =240 GHz, f max =330 GHz, BV CEO =1.7 V) along with high-voltage HBTs (f T =50 GHz, f max =130 GHz, BV CEO =3.7 V) integrated in a dual-gate, triple-well RF-CMOS process. Ring oscillator gate delays of 2.9 ps, low-noise amplifiers for 122 GHz, and LC oscillators for frequencies above 200 GHz are demonstrated.

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A five-stage differential SiGe low noise amplifier (LNA) in cascode topology is presented. Transformer coupling is used between the stages to obtain inter-stage matching. The single ended input and output of the LNA are realized by baluns. The LNA has 18 dB of gain at 245 GHz and a 3 dB bandwidth of 8 GHz. A noise figure of 11 ±1 dB NF of the LNA at 245 GHz was measured by the Y-factor method. These values represent the highest gain and the lowest measured noise figure at 245 GHz reported for a SiGe LNA so far. The LNA draws 82 mA at a supply voltage of 3.7 V.

of 240/330 GHz and Gate Delays Below 3 ps

A four-stage common-base (CB) 245-GHz low-noise amplifier (LNA) and a fourth subharmonic 245-GHz transconductance mixer are presented. An integrated subharmonic receiver for sensing applications in the 245-GHz industrial-scientific-medical band is proposed. The receiver consists of a single-ended CB LNA, a fourth transconductance subharmonic mixer, a 60-GHz push-push voltage-controlled oscillator with a 1/32 divider, and an IF amplifier. It is fabricated in an SiGe: C BiCMOS technology with f T and fmax of 300 and 500 GHz, respectively. Its measured single-ended gain is 21 dB at 243 GHz with a tuning range of 12 GHz, and a noise figure of 33 dB. The input 1-dB compression point is -37 dBm . The receiver dissipates at 358 mW.

A fully integrated BiCMOS PLL for 60 GHz wireless applications

A 60GHz VCO and 76GHz oscillator with integrated resonators are fabricated in a 0.25/spl mu/m SiGe:C BiCMOS technology. The circuits are suitable for millimeter wave systems including the 60GHz ISM band for broadband communication and the 76-77GHz region for automotive radar. Results derived from on-wafer measurements and mm-wave modules show wide tuning range and low phase noise.

A fully integrated 60 GHz LNA in SiGe:C BiCMOS technology

This paper presents an on-chip double-dipole antenna by applying micromachining techniques based on a standard SiGe BiCMOS process. It enables the fully integration of millimeter-wave transceiver and antenna into a single chip. A parametric study has been made in simulation which reveals the influence of the key design parameters over the radiation efficiency and directivity. A prototype has been fabricated and measured to verify the design. The measured peak gain is 8.4 dBi at 130 GHz with a simulated efficiency of 60 %. The 3-dB gain bandwidth is 122 – 140 GHz.

60 GHz transceiver circuits in SiGe:C BiCMOS technology

A subharmonic transceiver for sensing and imaging applications in the 122 GHz ISM band has been proposed. The receiver consists of a single-ended LNA, a push-push VCO with 1/32 divider, a polyphase filter, and a subharmonic mixer. The receiver is fabricated in SiGe:C BiCMOS technology with fT/fmax of 255GHz/315GHz. Its differential down-conversion gain is 31 dB at 122 GHz, and the corresponding noise figure is 11 dB. The 3-dB bandwidth reaches from 121 GHz to 124 GHz. The input 1-dB compression point is at −44 dBm. The receiver consumes 113 mA at a supply voltage of 3.2 V.