Yaoming Sun

A fully integrated 60 GHz LNA in SiGe:C BiCMOS technology

This paper presents a SiGe differential low-noise amplifier (LNA) for the V-band. The measured gain at 60 GHz is 18 dB, and the input return loss is below -15 dB. The 3-dB bandwidth is from 49 GHz to 71 GHz. Measured and simulated S-parameters agree well over the whole range. The LNA draws 30 mA from a 2.2 V supply. It facilitates the design of a fully integrated WLAN receiver in the 57-64 GHz band.

A Fully Differential 60 GHz Receiver Front-End with Integrated PLL in SiGe:C BiCMOS

This paper presents a 60 GHz receiver front-end in SiGe:C BiCMOS technology. The conversion gain is 22 dB from 60 GHz to 5 GHz without IF amplification. This front-end includes an LNA, a mixer and a 56 GHz PLL. The measured output 1-dB compression point is -5dBm

BEOL embedded RF-MEMS switch for mm-wave applications

We demonstrate for the first time the embedded integration of a Radio Frequency Microelectromechanical Systems (RF-MEMS) capacitive switch for mm-wave integrated circuits in a BiCMOS Back-end-of-line (BEOL). The switch shows state-of-the-art performance parameters. The ¿off¿ to ¿on¿ capacitance ratio is 1:10 providing excellent isolation in the mm-wave frequency range. Insertion loss and isolation are found to fall below 1.65 dB and to exceed 15 dB, respectively, in the frequency range of 60 GHz to 110 GHz. Feasibility of switch integration into single chip RF designs is demonstrated for a dual-band voltage controlled oscillator (VCO). No performance degradation was observed after ten billion hot-switching cycles.

A low-cost miniature 120GHz SiP FMCW/CW radar sensor with software linearization

This paper presents an integrated mixed-signal 120GHz FMCW/CW radar chipset in a 0.13μm SiGe BiCMOS technology. It features on-chip MMW built-in-self-test (BIST) circuits, a harmonic transceiver, software linearization (SWL) circuits and a digital interface. This chipset has been tested in a low-cost package, where the antennas are integrated. Above 100GHz, our transceiver has achieved state-ofthe-art integration level and receiver linearity, and DC power consumption.

60 GHz Ultrawideband Polarimetric MIMO Sensing for Wireless Multi-Gigabit and Radar

Polarimetric radio wave processing becomes of increasing interest for very high-data rate wireless transmission and for short-range radar at millimeter-waves (mm-W). This goes along with the huge bandwidth of 7 to 9 GHz, which is available worldwide in the 60 GHz unlicensed band. In this paper, we propose a 60 GHz ultra-wideband (UWB) polarimetric multiple-input-multiple-output (MIMO) sensing system architecture and polarimetric signal processing for short-range communications and radar. Demonstration measurements were made by using an UWB radar interface. By measurements in multipath rich environments it is demonstrated that tap-wise polarimetric filtering in delay domain can enhance the 60 GHz link budget by filtering some paths and then reducing shadowing due to human activity. Additionally, optimum MIMO polarimetric filtering is proposed to reduce heavy clutter for mm-W radar, increasing by about 30 dB the signal-to-clutter-plus-noise-ratio.

A micromachined double-dipole antenna for 122 – 140 GHz applications based on a SiGe BiCMOS technology

This paper presents an on-chip double-dipole antenna by applying micromachining techniques based on a standard SiGe BiCMOS process. It enables the fully integration of millimeter-wave transceiver and antenna into a single chip. A parametric study has been made in simulation which reveals the influence of the key design parameters over the radiation efficiency and directivity. A prototype has been fabricated and measured to verify the design. The measured peak gain is 8.4 dBi at 130 GHz with a simulated efficiency of 60 %. The 3-dB gain bandwidth is 122 – 140 GHz.

A 122 GHz Sub-Harmonic Mixer With a Modified APDP Topology for IC Integration

This letter presents a modified passive subharmonic mixer (SHM) topology based on an anti-parallel-diode-pair (APDP). It features a differential intermediate frequency output facilitating IC integration and improving common-mode noise rejection. An example 122 GHz SHM has been designed and tested in a 0.13 μm SiGe BiCMOS technology for a 122 GHz radar IC. SiGe HBT transistors have been diode-connected to form the APDP. The example SHM exhibits a conversion loss of 8 dB with a 5 dBm LO pumping power. The measured bandwidth extends from 117 to 124 GHz, adequately covering the 122-123 GHz ISM band, while the input 1 dB compression point and noise figure were measured to be -5 dBm and 8.5 dB respectively. Due to its superior 1/f noise performance and high linearity, the mixer is especially well suited to zero intermediate frequency radars.

Characterization of an embedded RF-MEMS switch

An RF-MEMS capacitive switch for mm-wave integrated circuits, embedded in the BEOL of 0.25 ¿m BiCMOS process, has been characterized. First, a mechanical model based on Finite-Element-Method (FEM) was developed by taking the residual stress of the thin film membrane into account. The pull-in voltage and the capacitance values obtained with the mechanical model agree very well with the measured values. Moreover, S-parameters were extracted using Electromagnetic (EM) solver. The data observed in this way also agree well with the experimental ones measured up to 110 GHz. The developed RF model was applied to a transmit/receive (T/R) antenna switch design. The results proved the feasibility of using the FEM model in circuit simulations for the development of RF-MEMS switch embedded, single-chip multi-band RF ICs.

An integrated 60 GHz receiver front-end in SiGe:C BiCMOS

This paper presents a fully differential 60 GHz receiver front-end in SiGe:C technology. It comprises a differential LNA and a Gilbert mixer. The measured down-conversion gain is 28 dB. In the 57-64 GHz band the in-band gain ripple is less than 1 dB, and the output 1-dB compression point is -1.6 dBm. Measured and simulated results agree well over the whole range. The LNA draws 30 mA from a 2.2 V supply and the mixer core consumes 6 mA from 3 V supply. The receiver front-end will be part of an integrated WLAN transceiver in the 60 GHz band

A low-phase-noise 61 GHz push-push VCO with divider chain and buffer in SiGe BiCMOS for 122 GHz ISM applications

This paper presents a 61 GHz push-push VCO with an integrated divide-by-eight divider and an output buffer in a 130 nm SiGe BiCMOS process. The VCO core features a differential Colpitts topology with coupled inductors to improve phase noise performance. Eight sub-bands are realized by three digital tuned varicaps, which are placed in parallel with the analog tuned varicap. Its tuning range is 60.85-63.65 GHz with a measured output power of above 10 dBm. The measured phase noise is -106 dBc/Hz at 1 MHz offset with an overall VCO/buffer power dissipation of 93.6 mW. The VCO/buffer has achieved an efficiency of 14%, a figure-of-merit including output power (FOMP) of 193.1 dBc/Hz and an ITRS FOM of 185.6 dBc/Hz.