John Androulakis

CsSnI3: Semiconductor or Metal? High Electrical Conductivity and Strong Near-Infrared Photoluminescence from a Single Material. High Hole Mobility and Phase-Transitions

CsSnI(3) is an unusual perovskite that undergoes complex displacive and reconstructive phase transitions and exhibits near-infrared emission at room temperature. Experimental and theoretical studies of CsSnI(3) have been limited by the lack of detailed crystal structure characterization and chemical instability. Here we describe the synthesis of pure polymorphic crystals, the preparation of large crack-/bubble-free ingots, the refined single-crystal structures, and temperature-dependent charge transport and optical properties of CsSnI(3), coupled with ab initio first-principles density functional theory (DFT) calculations. In situ temperature-dependent single-crystal and synchrotron powder X-ray diffraction studies reveal the origin of polymorphous phase transitions of CsSnI(3). The black orthorhombic form of CsSnI(3) demonstrates one of the largest volumetric thermal expansion coefficients for inorganic solids. Electrical conductivity, Hall effect, and thermopower measurements on it show p-type metallic behavior with low carrier density, despite the optical band gap of 1.3 eV. Hall effect measurements of the black orthorhombic perovskite phase of CsSnI(3) indicate that it is a p-type direct band gap semiconductor with carrier concentration at room temperature of ∼ 10(17) cm(-3) and a hole mobility of ∼585 cm(2) V(-1) s(-1). The hole mobility is one of the highest observed among p-type semiconductors with comparable band gaps. Its powders exhibit a strong room-temperature near-IR emission spectrum at 950 nm. Remarkably, the values of the electrical conductivity and photoluminescence intensity increase with heat treatment. The DFT calculations show that the screened-exchange local density approximation-derived band gap agrees well with the experimentally measured band gap. Calculations of the formation energy of defects strongly suggest that the electrical and light emission properties possibly result from Sn defects in the crystal structure, which arise intrinsically. Thus, although stoichiometric CsSnI(3) is a semiconductor, the material is prone to intrinsic defects associated with Sn vacancies. This creates highly mobile holes which cause the materials to appear metallic.

High Performance Thermoelectrics from Earth-Abundant Materials: Enhanced Figure of Merit in PbS by Second Phase Nanostructures

Lead sulfide, a compound consisting of elements with high natural abundance, can be converted into an excellent thermoelectric material. We report extensive doping studies, which show that the power factor maximum for pure n-type PbS can be raised substantially to ~12 μW cm(-1) K(-2) at >723 K using 1.0 mol % PbCl(2) as the electron donor dopant. We also report that the lattice thermal conductivity of PbS can be greatly reduced by adding selected metal sulfide phases. The thermal conductivity at 723 K can be reduced by ~50%, 52%, 30%, and 42% through introduction of up to 5.0 mol % Bi(2)S(3), Sb(2)S(3), SrS, and CaS, respectively. These phases form as nanoscale precipitates in the PbS matrix, as confirmed by transmission electron microscopy (TEM), and the experimental results show that they cause huge phonon scattering. As a consequence of this nanostructuring, ZT values as high as 0.8 and 0.78 at 723 K can be obtained for nominal bulk PbS material. When processed with spark plasma sintering, PbS samples with 1.0 mol % Bi(2)S(3) dispersion phase and doped with 1.0 mol % PbCl(2) show even lower levels of lattice thermal conductivity and further enhanced ZT values of 1.1 at 923 K. The promising thermoelectric properties promote PbS as a robust alternative to PbTe and other thermoelectric materials.

Nanostructures Boost the Thermoelectric Performance of PbS

In situ nanostructuring in bulk thermoelectric materials through thermo-dynamic phase segregation has established itself as an effective paradigm for optimizing the performance of thermoelectric materials. In bulk PbTe small compositional variations create coherent and semicoherent nanometer sized precipitates embedded in a PbTe matrix, where they can impede phonon propagation at little or no expense to the electronic properties. In this paper the nanostructuring paradigm is for the first time extended to a bulk PbS based system, which despite obvious advantages of price and abundancy, so far has been largely disregarded in thermoelectric research due to inferior room temperature thermoelectric properties relative to the pristine fellow chalcogenides, PbSe and PbTe. Herein we report on the synthesis, microstructural morphology and thermoelectric properties of two phase (PbS)(1-x)(PbTe)(x)x = 0-0.16 samples. We have found that the addition of only a few percent PbTe to PbS results in a highly nanostructured material, where PbTe precipitates are coherently and semicoherently embedded in a PbS matrix. The present (PbS)(1-x)(PbTe)(x) nanostructured samples show substantial decreases in lattice thermal conductivity relative to pristine PbS, while the electronic properties are left largely unaltered. This in turn leads to a marked increase in the thermoelectric figure of merit. This study underlines the efficiency of the nanostructuring approach and strongly supports its generality and applicability to other material systems. We demonstrate that these PbS-based materials, which are made primarily from abundant Pb and S, outperform optimally n-type doped pristine PbTe above 770 K.

Exploring Resonance Levels and Nanostructuring in the PbTe-CdTe System and Enhancement of the Thermoelectric Figure of Merit

We explored the effect of Cd substitution on the thermoelectric properties of PbTe in an effort to test a theoretical hypothesis that Cd atoms on Pb sites of the rock salt lattice can increase the Seebeck coefficient via the formation of a resonance level in the density of states near the Fermi energy. We find that the solubility of Cd is less than previously reported, and CdTe precipitation occurs to create nanostructuring, which strongly suppresses the lattice thermal conductivity. We present detailed characterization including structural and spectroscopic data, transmission electron microscopy, and thermoelectric transport properties of samples of PbTe-x% CdTe-0.055% PbI(2) (x = 1, 3, 5, 7, 10), PbTe-1% CdTe-y% PbI(2) (y = 0.03, 0.045, 0.055, 0.08, 0.1, 0.2), PbTe-5% CdTe-y% PbI(2) (y = 0.01, 0.03, 0.055, 0.08), and PbTe-1% CdTe-z% Sb (z = 0.3, 0.5, 1, 1.5, 2, 3, 4, 5, 6). All samples follow the Pisarenko relationship, and no enhancement of the Seebeck coefficient was observed that could be attributed to a resonance level or a distortion in the density of states. A maximum ZT of approximately 1.2 at approximately 720 K was achieved for the PbTe-1% CdTe-0.055% PbI(2) sample arising from a high power factor of approximately 17 microW/(cm K(2)) and a very low lattice thermal conductivity of approximately 0.5 W/(m K) at approximately 720 K.

Synthesis in ionic liquids: [Bi2Te2Br](AlCl4), a direct gap semiconductor with a cationic framework.

The Lewis acidic ionic liquid EMIMBr-AlCl(3) (EMIM = 1-ethyl-3-methylimidazolium) allows a novel synthetic route to the semiconducting layered metal chalcogenides halide [Bi(2)Te(2)Br](AlCl(4)) and its Sb analogue. [Bi(2)Te(2)Br](AlCl(4)) is a direct band gap, strongly anisotropic semiconductor and consists of cationic infinite layers of [Bi(2)Te(2)Br](+) and [AlCl(4)](-) anions inserted between the layers.

Thermoelectrics from Abundant Chemical Elements: High-Performance Nanostructured PbSe–PbS

We report promising thermoelectric properties of the rock salt PbSe-PbS system which consists of chemical elements with high natural abundance. Doping with PbCl(2), excess Pb, and Bi gives n-type behavior without significantly perturbing the cation sublattice. Thus, despite the great extent of dissolution of PbS in PbSe, the transport properties in this system, such as carrier mobilities and power factors, are remarkably similar to those of pristine n-type PbSe in fractions as high as 16%. The unexpected finding is the presence of precipitates ~2-5 nm in size, revealed by transmission electron microscopy, that increase in density with increasing PbS concentration, in contrast to previous reports of the occurrence of a complete solid solution in this system. We report a marked impact of the observed nanostructuring on the lattice thermal conductivity, as highlighted by contrasting the experimental values (~1.3 W/mK) to those predicted by Klemens-Drabble theory at room temperature (~1.6 W/mK). Our thermal conductivity results show that, unlike in PbTe, optical phonon excitations in PbSe-PbS systems contribute to heat transport at all temperatures. We show that figures of merit reaching as high as ~1.2-1.3 at 900 K can be obtained, suggesting that large-scale applications with good conversion efficiencies are possible from systems based on abundant, inexpensive chemical elements.

Thermoelectric enhancement in PbTe with K or Na codoping from tuning the interaction of the light- and heavy-hole valence bands

The effect of K and K-Na substitution for Pb atoms in the rocksalt lattice of PbTe was investigated to test a hypothesis for development of resonant states in the valence band that may enhance the thermoelectric power. We combined high-temperature Hall-effect, electrical conductivity, and thermal conductivity measurements to show that K-Na codoping do not form resonance states but can control the energy difference of the maxima of the two primary valence subbands in PbTe. This leads to an enhanced interband interaction with rising temperature and a significant rise in the thermoelectric figure of merit of p-type PbTe. The experimental data can be explained by a combination of a single- and two-band models for the valence band of PbTe depending on hole density that varies in the range of 1-15 x 10{sup 19} cm{sup -3}.

High-performance tellurium-free thermoelectrics: All-scale hierarchical structuring of p-type PbSe-MSe systems (M = Ca, Sr, Ba)

We present a systematic study of the characterization and thermoelectric properties of nanostructured Na-doped PbSe embedded with 1-4% MSe (M = Ca, Sr, Ba) phases as endotaxial inclusions. The samples were powder-processed by the spark plasma sintering technique, which introduces mesoscale-structured grains. The hierarchical architectures on the atomic scale (Na and M solid solution), nanoscale (MSe nanoprecipitates), and mesoscale (grains) were confirmed by transmission electron microscopy. These structures produce a great reduction in the lattice thermal conductivity relative to pristine PbSe without appreciably affecting the power factor. The lattice thermal conductivity can be reduced by up to ∼29% when the second phase is added. The highest ZT value achieved was ∼1.3 at 923 K for both 2% SrSe-and 3% BaSe-containing samples, while the sample containing 4% CaSe showed a ZT value of ∼1.2 at 923 K. The optimal samples have hole carrier concentration of 1-2 × 10(20) cm(-3). We attribute the high ZT values to the combination of broad-based phonon scattering on multiple length scales and favorable charge transport through coherent interfaces between the PbSe matrix and MSe.

Dimensional Reduction: A Design Tool for New Radiation Detection Materials

John Androulakis , Sebastian C. Peter , Hao Li , Christos D. Malliakas , John A. Peters , Zhifu Liu , Bruce W W. essels , Jung-Hwan Song , Hosub Jin , Arthur J. reeman , F and Mercouri G. Kanatzidis *

Seeing Is Believing: Weak Phonon Scattering from Nanostructures in Alkali Metal-Doped Lead Telluride

Alkali metal doped p-type PbTe is a canonical thermoelectric material studied extensively for heat-to-power generation at high temperature. Most reports have indirectly indicated alkali metals to be conventional with PbTe forming homogeneous solid solutions. Using transmission electron microscopy (TEM), we show the presence of platelet-like nanostructures in these systems containing Na and/or K. By combining further TEM and semiclassical theoretical calculations based on a modified Debye model of the lattice thermal conductivity, we explain the lack of efficacy of these nanostructures for strong phonon scattering. These findings are important in the understanding of alkali metals as carriers in p-type lead chalcogenides. These results also underscore that not all nanostructures favorably scatter phonons in a matrix; an insight that may help in further improvements of the power factor and the overall figure of merit.