John Covey

Complementary metal–oxide–semiconductor compatible high efficiency subwavelength grating couplers for silicon integrated photonics

We demonstrate a through-etched grating coupler based on subwavelength nanostructure. The grating consists of arrays of 80 nm × 343 nm rectangular air holes, which can be patterned in a single lithography/etch. A peak coupling efficiency of 59% at 1551.6 nm and a 3 dB bandwidth of 60 nm are achieved utilizing the silicon-on-insulator platform with a 1 μm thick buried-oxide layer for transverse electric mode. The performance is comparable to gratings requiring much more complicated fabrication processes.

Ultracompact and fabrication-tolerant integrated polarization splitter

Design and fabrication of a 2×2 two-mode interference (TMI) coupler based on-chip polarization splitter is presented. By changing the angle between the access waveguides, one can tune the effective TMI length for the mode with less optical confinement (transverse magnetic, TM) to coincide with the target TMI length for a desired transmission of the mode with higher optical confinement (transverse electric, TE). The fabricated 0.94 μm long 2×2 TMI splits the input power into TM (bar) and TE (cross) outputs with splitting ratio over 15 dB over 50 nm bandwidth. Fabrication tolerance analysis shows that the device is tolerant to fabrication errors as large as 60 nm.

On-chip silicon optical phased array for two-dimensional beam steering

A 16-element optical phased array integrated on chip is presented for achieving two-dimensional (2D) optical beam steering. The device is fabricated on the silicon-on-insulator platform with a 250 nm silicon device layer. Steering is achieved via a combination of wavelength tuning and thermo-optic phase shifting with a switching power of P(π)=20  mW per channel. Using a silicon waveguide grating with a polycrystalline silicon overlay enables narrow far field beam widths while mitigating the precise etching needed for conventional shallow etch gratings. Using this system, 2D steering across a 20°×15° field of view is achieved with a sidelobe level better than 10 dB and with beam widths of 1.2°×0.5°.

Efficient light coupling into in-plane semiconductor nanomembrane photonic devices utilizing a sub-wavelength grating coupler.

We report a subwavelength grating (SWG) coupler for coupling light efficiently into in-plane semiconductor nanomembrane photonic devices for the first time. The SWG coupler consists of a periodic array of rectangular trenches fabricated on a silicon nanomembrane (SiNM) transferred onto a glass substrate. At a wavelength of 1555.56 nm, the coupling efficiency of the fabricated 10 µm wide, 17.1 µm long SWG is 39.17% (-4.07 dB), with 1 dB and 3 dB bandwidths of 29 nm and 57 nm, respectively. Peak efficiency varies by 0.26 dB when measuring 5 fabricated grating pairs. Coupling efficiency can further be improved with an improved SiNM transfer process. Such high efficiency couplers allow for the successful realization of a plethora of hybrid photonic devices utilizing nanomembrane technology.

Efficient perfectly vertical fiber-to-chip grating coupler for silicon horizontal multiple slot waveguides.

Horizontal multiple slot waveguides of polysilicon and silicon nanocrystalline oxide were grating coupled to a surface normal fiber array. Measurements yielded a coupling efficiency of 60% per grating. The fabrication-tolerant, four-stage grating design was genetically evolved from a random seed without starting from first-principle design. Theoretical coupling efficiency was 68% and was re-designed to 63% after accommodating all sources of fabrication error. To our knowledge, this is the first implementation of a purely polysilicon and silicon nanocrystalline oxide slot waveguide platform.

Colorless grating couplers realized by interleaving dispersion engineered subwavelength structures

A wideband grating coupler based on interleaving dispersion engineered subwavelength structures has been proposed and experimentally demonstrated. The fabricated device shows a coupling efficiency of 5.1dB and a 1dB bandwidth of 70 nm.

Flexible single-crystal silicon nanomembrane photonic crystal cavity

Flexible inorganic electronic devices promise numerous applications, especially in fields that could not be covered satisfactorily by conventional rigid devices. Benefits on a similar scale are also foreseeable for silicon photonic components. However, the difficulty in transferring intricate silicon photonic devices has deterred widespread development. In this paper, we demonstrate a flexible single-crystal silicon nanomembrane photonic crystal microcavity through a bonding and substrate removal approach. The transferred cavity shows a quality factor of 2.2×10(4) and could be bent to a curvature of 5 mm radius without deteriorating the performance compared to its counterparts on rigid substrates. A thorough characterization of the device reveals that the resonant wavelength is a linear function of the bending-induced strain. The device also shows a curvature-independent sensitivity to the ambient index variation.

Ultralow-loss polycrystalline silicon waveguides and high uniformity 1x12 MMI fanout for 3D photonic integration

We have investigated the feasibility of multimode polysilicon waveguides to demonstrate the suitability of polysilicon as a candidate for multilayer photonic applications. Solid Phase Crystallization (SPC) with a maximum temperature of 1000°C is used to create polysilicon on thermally grown SiO2. We then measure the propagation losses for various waveguide widths on both polysilicon and crystalline silicon platforms. We find that as the width increases for polysilicon waveguides, the propagation loss decreases similar to crystalline silicon waveguides. At a waveguide width of 10 µm, polysilicon and crystalline silicon waveguides have propagation losses of 0.56 dB/cm and 0.31 dB/cm, respectively, indicating there is little bulk absorption from the polysilicon and is the lowest propagation loss for polysilicon demonstrated to date. In addition, the first 1x12 polysilicon MMI is demonstrated with a low insertion loss of -1.29dB and a high uniformity of 1.07 dB. These results vindicate the use of polysilicon waveguides of varying widths in photonic integrated circuits.

Coupling loss minimization of slow light slotted photonic crystal waveguides using mode matching with continuous group index perturbation

We experimentally demonstrate highly efficient coupling into a slow light slotted photonic crystal waveguide. With optical mode converters and group index tapers that provide good optical mode matching and impedance matching, a nearly flat transmission over the entire guided mode spectrum of 68.8 nm range with 2.4 dB minimum insertion loss is demonstrated. Measurements also show up to 20 dB baseline enhancement and 30 dB enhancement in the slow light region, indicating that it is possible to design highly efficient and compact devices that benefit from the slow light enhancement without increasing the coupling loss.

All-optical switching with 1-ps response time in a DDMEBT enabled silicon grating coupler/resonator hybrid device

An amorphous film of the third-order nonlinear optical material DDMEBT was spun onto silicon chips for the first time, filling 80 nm lithographic features. A 710 μm² device was designed, fabricated, and tested that acts both as a nonlinear resonator switch and as an input/output grating coupler to a perfectly vertical single mode fiber. Autocorrelation and spectral measurements indicate the device has <1 ps response time, 4 nm of switching bandwidth, and 4 dB of on/off contrast. With sufficient power, this all-optical device can potentially modulate a single optical carrier frequency in excess of 1 THz.