John T. L. Thong

High Mobility, Printable, and Solution-Processed Graphene Electronics

The ability to print graphene sheets onto large scale, flexible substrates holds promise for large scale, transparent electronics on flexible substrates. Solution processable graphene sheets derived from graphite can form stable dispersions in solutions and are amenable to bulk scale processing and ink jet printing. However, the electrical conductivity and carrier mobilities of this material are usually reported to be orders of magnitude poorer than that of the mechanically cleaved counterpart due to its higher density of defects, which restricts its use in electronics. Here, we show that by optimizing several key factors in processing, we are able to fabricate high mobility graphene films derived from large sized graphene oxide sheets, which paves the way for all-carbon post-CMOS electronics. All-carbon source-drain channel electronics fabricated from such films exhibit significantly improved transport characteristics, with carrier mobilities of 365 cm(2)/(V.s) for hole and 281 cm(2)/(V.s) for electron, measured in air at room temperature. In particular, intrinsic mobility as high as 5000 cm(2)/(V.s) can be obtained from such solution-processed graphene films when ionic screening is applied to nullify the Coulombic scattering by charged impurities.

Probing Layer Number and Stacking Order of Few‐Layer Graphene by Raman Spectroscopy

Graphene is a two-dimensional material defined as a planar honeycomb lattice of close-packed carbon atoms, where the electrons exhibit a linear dispersion near Dirac K points and behave as massless Dirac fermions. However, the valence and conduction bands in an AB stacked graphene bilayer split into two parabolic branches near the K point originating from the interaction of p electrons, and the electrons are hence described by massive Dirac fermions. Moreover, a graphene bilayer is a tunable-gap semiconductor under electric-field biasing. With a further increase in the number of layers along with AB stacking, the electronic structure reveals stepwise variations that eventually approach that of the three-dimensional counterpart. Considering the close relation between the electronic properties and layer number of few-layer graphene (FLG), the ability to accurately determine the layer number and correlating this with the electronic structure is a prerequisite in understanding the evolution of the electronic properties from twoto threedimensional graphitic materials. In addition to graphene layers with AB stacking, FLG with arbitrary stacking (Figure 1) is considered to possess distinct properties arising from its different crystalline structure and p electron interactions. Experimentally, it has been observed that the electroand magnetotransport properties for folded graphene sheets are different to thoseofAB stackedbilayers. Furthermore,FLG grown on SiC, Ni, and Ru also have non-AB stacking order. Therefore, elucidating the detailed character-

Length-dependent thermal conductivity in suspended single-layer graphene

Graphene exhibits extraordinary electronic and mechanical properties, and extremely high thermal conductivity. Being a very stable atomically thick membrane that can be suspended between two leads, graphene provides a perfect test platform for studying thermal conductivity in two-dimensional systems, which is of primary importance for phonon transport in low-dimensional materials. Here we report experimental measurements and non-equilibrium molecular dynamics simulations of thermal conduction in suspended single-layer graphene as a function of both temperature and sample length. Interestingly and in contrast to bulk materials, at 300 K, thermal conductivity keeps increasing and remains logarithmically divergent with sample length even for sample lengths much larger than the average phonon mean free path. This result is a consequence of the two-dimensional nature of phonons in graphene, and provides fundamental understanding of thermal transport in two-dimensional materials.

Large-scale synthesis and field emission properties of vertically oriented CuO nanowire films

Using a simple method of direct heating of bulk copper plates in air, oriented CuO nanowire films were synthesized on a large scale. The length and density of nanowires could be controlled by growth temperature and growth time. Field emission (FE) measurements of CuO nanowire films show that they have a low turn-on field of 3.5?4.5?V??m?1 and a large current density of 0.45?mA?cm?2 under an applied field of about 7?V??m?1. By comparing the FE properties of two types of samples with different average lengths and densities (30??m, 108?cm?2 and 4??m, 4 ? 107?cm?2, respectively), we found that the large length?radius ratio of CuO nanowires effectively improved the local field, which was beneficial to field emission. Verified with finite element calculation, the work function of oriented CuO nanowire films was estimated to be 2.5?2.8?eV.

Simple fabrication of a ZnO nanowire photodetector with a fast photoresponse time

A zinc oxide (ZnO) nanowire photodetector was fabricated by a simple method of growing ZnO nanowires bridging the gap of two patterned zinc electrodes. The nanowire growth is self-catalytic, involving the direct heating of patterned Zn electrodes at 700°C in an O2∕Ar gas flow of 20SCCM (standard cubic centimeter per minute at STP)/80SCCM, respectively, at atmospheric pressure for 3h. The fabricated photodetector demonstrated fast response of shorter than 0.4ms to UV illumination in air, which could be attributed to the adsorption, desorption, and diffusion of water molecules in the air onto the nanowire significantly influencing the photoresponse.

High-Throughput Synthesis of Graphene by Intercalation−Exfoliation of Graphite Oxide and Study of Ionic Screening in Graphene Transistor

We report a high-throughput method of generating graphene monolayer (>90% yield) from weakly oxidized, poorly dispersed graphite oxide (GO) aggregates. These large-sized GO aggregates consist of multilayer graphite flakes which are oxidized on the outer layers, while the inner layers consist of pristine or mildly oxidized graphene sheets. Intercalation-exfoliation of these GO aggregates by tetrabutylammonium cations yields large-sized conductive graphene sheets (mean sheet area of 330 +/- 10 microm(2)) with high monolayer yield. Thin-film field-effect transistors made from these graphene sheets exhibit high mobility upon nullifying Coulomb scattering by ionic screening. Ionic screening versus chemical doping effects of different ions such as chloride and fluoride on these graphene films were investigated with a combination of in situ Raman spectroscopy and transport measurement.

Thermal Transport in Suspended and Supported Few-Layer Graphene

We report thermal conductivity (κ) measurements from 77 to 350 K on both suspended and supported few-layer graphene using a thermal-bridge configuration. The room temperature value of κ is comparable to that of bulk graphite for the largest flake, but reduces significantly for smaller flakes. The presence of a substrate lowers the value of κ, but the effect diminishes for the thermal transport in the top layers away from the substrate. For the suspended sample, the temperature dependence of κ follows a power law with an exponent of 1.4 ± 0.1, suggesting that the flexural phonon modes contribute significantly to the thermal transport of the suspended graphene. The measured values of κ are generally lower than those from theoretical studies. We attribute this deviation to the phonon-boundary scattering at the graphene-contact interfaces, which is shown to significantly reduce the apparent measured thermal conductance of graphene.

Improving the NH3 gas sensitivity of ZnO nanowire sensors by reducing the carrier concentration

We report a method to improve the sensitivity of a zinc oxide (ZnO) nanowire gas sensor towards ammonia (NH(3)) without the use of catalyst nanoparticles on the nanowire surface. This improvement is achieved by lowering the nominal carrier concentration in the as-grown ZnO nanowires. The carrier concentration in the as-grown ZnO nanowires can be tuned by treating these nanowires to either an oxidizing gas plasma or a reducing gas plasma, as observed from the measured current-voltage (I-V) characteristics response. We demonstrate that a ZnO nanowire sensor device that has been subjected to oxygen plasma treatment, thereby having a reduced carrier concentration, exhibits a sensitivity towards 0.75% NH(3) gas that is improved by approximately four times. The origin of this gas sensitivity improvement is discussed based on x-ray photoelectron spectroscopy analysis results of the plasma-treated ZnO nanowires.

TMAH etching of silicon and the interaction of etching parameters

Abstract A study of tetramethylammonium hydroxide (TMAH) etching of silicon and the interaction of etching parameters has been carried out. We find that the silicon etch rate increases as the TMAH concentration increases and it reaches a maximum at 4 wt.%. The etch rate of n-type silicon is found to be slightly higher than that of p-type silicon. We conclude that illumination has no effect on the etch rate with our present experimental set-up. Etching experiments on silicon oxide layers show that both wet and dry oxides etch faster in lower TMAH concentration, and wet oxide generally etches faster than a dry oxide layer. A higher temperature also results in a higher etch rate for both the wet and dry oxides. From factorial analysis, we conclude that for silicon etching, the interaction between TMAH concentration and substrate type is the strongest. The silicon oxide etching experiments show that temperature is the most prominent factor and the most pronounced interaction exists between temperature and TMAH concentration.

Low-Contact-Resistance Graphene Devices with Nickel-Etched-Graphene Contacts

The performance of graphene-based transistors is often limited by the large electrical resistance across the metal-graphene contact. We report an approach to achieve ultralow resistance metal contacts to graphene transistors. Through a process of metal-catalyzed etching in hydrogen, multiple nanosized pits with zigzag edges are created in the graphene portions under source/drain metal contacts while the graphene channel remains intact. The porous graphene source/drain portions with pure zigzag-termination form strong chemical bonds with the deposited nickel metallization without the need for further annealing. This facile contact treatment prior to electrode metallization results in contact resistance as low as 100 Ω·μm in single-layer graphene field-effect transistors, and 11 Ω·μm in bilayer graphene transistors. Besides 96% reduction in contact resistance, the contact-treated graphene transistors exhibit 1.5-fold improvement in mobility. More importantly, the metal-catalyzed etching contact treatment is compatible with complementary metal-oxide-semiconductor (CMOS) fabrication processes, and holds great promise to meet the contact performance required for the integration of graphene in future integrated circuits.