Joo-Hyoung Lee

Enhanced thermoelectric performance of PEDOT:PSS/PANI–CSA polymer multilayer structures

A layer-by-layer deposition of two conducting polymers, each layer of which is a few tenths of nanometer thick, has been successfully performed to enhance the thermoelectric power factor of organic thin films, which are critical components of flexible thermoelectric energy harvesting devices. The multilayer films were deposited via multiple solution processes, which exhibit enhanced electrical conductivity without any significant degradation of the Seebeck coefficient, in contrast to a coupling behavior between the electrical conductivity and the Seebeck coefficient in bulk materials. The electrical conductivity and power factor—proportional to the electrical conductivity—of 5(PEDOT:PSS/PANI–CSA) multilayer films are 1.3 and 2 times higher than those of a single PEDOT:PSS layer. Transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS) reveal distinct interfaces through which an enhanced electrical conductivity and power factor have been achieved in our multilayer films. From the TEM, EELS, and Raman analyses, a model for the enhancement of the electrical conductivity has been proposed. The enhancement of electrical conductivity occurs via stretching of PEDOT and PANI chains and hole diffusion from the PANI–CSA layer to the PEDOT:PSS layer. The band alignment in the multilayer structure not only enhances electrical conductivity but also maintains the Seebeck coefficient at an optimum value. Our study suggests that the layer-by-layer deposition of polymer thin films is a promising technique for manipulating the thermoelectric properties of each polymer component to enhance thermoelectric performance.

Recovery Mechanism of Degraded Black Phosphorus Field‐Effect Transistors by 1,2‐Ethanedithiol Chemistry and Extended Device Stability

Black phosphorus (BP) has drawn enormous attention for both intriguing material characteristics and electronic and optoelectronic applications. In spite of excellent advantages for semiconductor device applications, the performance of BP devices is hampered by the formation of phosphorus oxide on the BP surface under ambient conditions. It is thus necessary to resolve the oxygen-induced degradation on the surface of BP to recover the characteristics and stability of the devices. To solve this problem, it is demonstrated that a 1,2-ethanedithiol (EDT) treatment is a simple and effective way to remove the bubbles formed on the BP surface. The device characteristics of the degraded BP field-effect transistor (FET) are completely recovered to the level of the pristine cases by the EDT treatment. The underlying principle of bubble elimination on the BP surface by the EDT treatment is systematically analyzed by density functional theory calculation, atomic force microscopy, and X-ray photoelectron spectroscopy analysis. In addition, the performance of the hexagonal boron nitride-protected BP FET is completely retained without changing device characteristics even when exposed to 30 d or more in air. The EDT-induced recovering effect will allow a new route for the optimization of electronic and optoelectronic devices based on BP.

Origin of the emergence of higher T c than bulk in iron chalcogenide thin films

Fabrication of epitaxial FeSexTe1−x thin films using pulsed laser deposition (PLD) enables improving their superconducting transition temperature (Tc) by more than ~40% than their bulk Tc. Intriguingly, Tc enhancement in FeSexTe1−x thin films has been observed on various substrates and with different Se content, x. To date, various mechanisms for Tc enhancement have been reported, but they remain controversial in universally explaining the Tc improvement in the FeSexTe1−x films. In this report, we demonstrate that the controversies over the mechanism of Tc enhancement are due to the abnormal changes in the chalcogen ratio (Se:Te) during the film growth and that the previously reported Tc enhancement in FeSe0.5Te0.5 thin films is caused by a remarkable increase of Se content. Although our FeSexTe1−x thin films were fabricated via PLD using a Fe0.94Se0.45Te0.55 target, the precisely measured composition indicates a Se-rich FeSexTe1−x (0.6u2009<u2009xu2009<u20090.8) as ascertained through accurate compositional analysis by both wavelength dispersive spectroscopy (WDS) and Rutherford backscattering spectrometry (RBS). We suggest that the origin of the abnormal composition change is the difference in the thermodynamic properties of ternary FeSexTe1−x, based on first principle calculations.