Joo-Il Hong

Optimization of Stirrer with Various Parameters in Reverberation Chamber

Reverberation chambers are widely used in electromag- netic compatibility test facilities because they provide a large working volume and are cheaper than other types of test facilities. In addition, they provide a statistically uniform fleld and generate a high maxi- mum electric fleld within a relatively large volume. The volume of the cavity, the structure of the stirrer, and high tested frequency must be used in the reverberation chamber appropriately. Changing a volume of cavity dimensions and test frequency can be di-cult in the rever- beration chamber because they were determined already in the design process. In these cases, the stirrer should be changed. We investigated of the efiects of various stirrer angles and heights on a reverberation chamber. The optimization of the stirrer with respect to various stirrer parameters was investigated; these parameters are related to fleld uni- formity, the quality factor, stirred e-ciency, and electric fleld polarity. Our results suggest that a reverberation chamber can be successfully operated if careful decisions are made regarding the stirrer design.

CHARACTERIZATION OF THE SUSCEPTIBILITY OF INTEGRATED CIRCUITS WITH INDUCTION CAUSED BY HIGH POWER MICROWAVES

This paper examines malfunction and destruction of semiconductors by high power microwaves. The experiments employ a waveguide and a magnetron to study the influence of high power microwaves on TTL/CMOS IC inverters. The TTL/CMOS IC inverters are composed of a LED circuit for visual discernment. A CMOS IC inverter damaged by a high power microwave is observed with power supply current and delay time. When the power supply current was increased 2.14times for normal current at 10 kV/m, the CMOS inverter was broken by latch-up. The CMOS inverter damaged by latch-up returned its original level of functioning, because parasitic impedance inside the chip increased with the elapse of time. Three different types of damage were observed by microscopic analysis: component, onchipwire, and bondwire destruction. Based on the results, TTL/CMOS IC inverters can be applied to database to elucidate the effects of microwaves on electronic equipment.

Susceptibility of CMOS IC Devices Under Narrow-Band High Power Electromagnetic Waves by Magnetron

We investigated the damage effects of CMOS IC devices manufactured using three different technologies under narrow-band high power electromagnetic (NB-HPEM) waves by magnetron. The output of NB-HPEM waves was controlled from 0 to 1 kW, and the narrow-band operating frequency was 2, 460±50 MHz. The NB-HPEM waves were propagated into a closed-ended standard rectangular waveguide for 1 s. During our investigation, six different semiconductor technologies (three CMOS AND, and three CMOS NAND devices) were tested. The CMOS IC devices showed two types of damage i) malfunction, which means that no physical damage occurred in the system and after a reset, the system returned to normal function, and ii) destruction, which means that the system incurred physical damage, and operation could not be recovered without hardware repair. We increased the electric field, and the HCT and HC series of CMOS AND and NAND devices underwent reversible malfunctions. Furthermore, the HCT and HC series of CMOS AND and NAND devices were not destroyed at the maximum electric field (E max = 23.938 kV/m). However, only the AC series of CMOS AND and NAND devices underwent reversible malfunctions and experienced permanent destruction at much higher fields. The surfaces of the destroyed CMOS devices were removed and the chip conditions were investigated with a microscope. The microscopic analysis of the damaged devices showed component and bondwire destruction such as breakthroughs and melting due to thermal effects. Our results are expected to provide fundamental data for interpreting the combined failure mechanism of digital IC devices in an intentional electromagnetic environment.

Susceptibility and Coupled Waveform of Microcontroller Device by Impact of UWB-HPEM

Modern electronic circuits are important to communication, traffic systems, and security systems. An intentional threat to these systems could result in casualties and economic disaster. This study examined the damage effects to a microcontroller device with coupling caused by an ultra-wideband high power electromagnetic (UWB-HPEM) pulse. The UWB measurements were performed in an semi-anechoic chamber using a RADAN UWB voltage source which can generate a transient impulse of about 180 kV. The susceptibility level for the microcontroller was assessed by field strength, and its failure modes were observed. In the A-type of malfunction, the device has returned to its normal state by external rest at lower field strengths (8.9 kV/m). In the B-type of malfunction, the device recovered from its normal state by switching on/off a power supply when the amplitude of the electromagnetic pulse increased twofold. A further increase in amplitude leads to destruction. Also, the coupled waveform was analogous to damped sinusoidal functions. Based on these results, the susceptibility of the microcontroller can be applied to a database to help elucidate the effects of microwaves on electronic equipment.

Susceptibility of Microcontroller Devices due to Coupling Effects Under Narrow-Band High Power Electromagnetic Waves by Magnetron

We investigated the malfunction and destruction characteristics of microcontroller devices under narrow-band high power electromagnetic (NB-HPEM) wave by magnetron. NB-HPEM wave was rated at a microwave output of 0 to 1000 W at a frequency of 2460 ± 50 MHz, and was radiated from an open-ended standard rectangular waveguide (WR-340) to free space. The influence of different reset, clock, data, and power supply line lengths was tested. The variation of the lines length was done with flat cables. The susceptibility of the tested microcontroller devices was in general, strongly influenced by clock, reset, and power supply line length, and was only slightly influenced by data line length. Furthermore, as the line length was increased, the malfunction threshold decreased as expected, because more energy was coupled to the devices. The surfaces of the destroyed microcontroller devices were removed and the chip conditions were investigated with a microscope. The microscopic analysis of the damaged devices showed component and bondwire destruction such as breakthroughs and melting due to thermal effects. Our results are expected to provide fundamental data for interpreting the combined mechanism of microcontroller devices in an intentional microwave environment.

Delay Time and Power Supply Current Characteristics of CMOS Inverter Broken by Intentional High Power Microwave

This paper examined delay time and breakdown effects of CMOS inverter by impact of high power microwave. The experiments employed a waveguide and a magnetron to study the supply current characteristics of CMOS inverter broken by high power microwave. The CMOS inverters were composed of a LED circuit for visual discernment. Also CMOS inverters broken by high power microwave were observed with supply current and delay time. When power supply current increased 2.14 times for normal current at the 10 kV/m, the CMOS inverter was broken by Latch-up. Also the CMOS inverter broken by Latch-up returned to function of original condition because parasitic impedance inside chip was increased with time. Based on the result, CMOS devices were applied to the data which understood microwave effects of electronic equipment.

Surface Properties and Adhesion of Semiconducting and Insulating Silicone Rubber by Corona Discharge Treatment

In this work, the effects of the corona treatment on surface properties of semiconducting silicone rubber were investigated in terms of contact angles, ATR-FTIR(Attenuated total reflection fourier transform infrared spectroscopy) and XPS(X-ray photoelectron spectroscopy). And the adhesive characteristics were studied by measuring the T-peel strengths. Based on chemical analysis, the surface modification can be mainly ascribed to the creation of chemically active functional groups such as C-O, C

Damage Effect and Delay Time of CMOS Integrated Circuits Device with Coupling Caused by High Power Microwave

This paper examines the damage effect and delay time of CMOS integrated circuits device with coupling caused by high power microwaves. The waveguide and magnetron was employed to study the influence of high power micro-waves on CMOS inverters. The CMOS inverters were composed of a LED circuit for visual discernment. Also CMOS inverters broken by high power microwave is observed with supply current and delay time. When the power supply current was increased 2.14 times for normal current at 9.9 kV/m, the CMOS inverter was broken by latch-up. Three different types of damage were observed by microscopic analysis: component, onchipwire, and bondwire destruction. Based on the results, CMOS inverters can be applied to database to elucidate the effects of microwaves on electronic equipment.

Malfunction and Destruction Analysis of CMOS IC by Intentional High Power Microwave

We investigated the malfunction and destruction characteristics of the CMOS AND-and NAND-devices that manufactured the respective three different technologies under high power microwave (HPM) impact by magnetron. HPM was rated at a microwave output of 0 to 1,000 W, at a frequency of 2.45 GHz and was extracted into a standard rectangular waveguide (WR-340). Different CMOS AND-and NAND devices were located into the waveguide respectively. CMOS AND-and NAND-devices were damaged two types. One is malfunction which means no physical damage is done to the system and after a reset the system is going back into function. The other is destruction which means a physical damage of the system so that the system will not recover without a hardware repair. Destructed CMOS NAND devices were removed their surface and a chip conditions were analyzed by SEM. The SEM analysis of the damaged devices showed onchipwire destruction like melting due to thermal effect. The tested results expect to be applied to the fundamental data which interprets the combination mechanism of the semiconductors from artificial microwave environment.

Adhesion and Electrical Performance by Plasma Treatment of Semiconductive Silicone Rubber

In this paper, the effect of adhesion properties of semiconductive-insulating interface layer of silicone rubber on electrical properties was investigated. The modifications produced on the silicone surface by oxygen plasma were accessed using ATR-FTIR, contact angle and Surface Roughness Tester. Adhesion was obtained from T-peel tests of semiconductive layer haying different treatment durations. In addition, ac breakdown test was carried out for elucidating the change of electrical property with duration of plasma treatment. From the results, the treatment in the oxygen plasma produced a noticeable increase in surface energy, which can be mainly ascribed to the creation of O-H and C