Sun-Mook Hwang

CHARACTERIZATION OF THE SUSCEPTIBILITY OF INTEGRATED CIRCUITS WITH INDUCTION CAUSED BY HIGH POWER MICROWAVES

This paper examines malfunction and destruction of semiconductors by high power microwaves. The experiments employ a waveguide and a magnetron to study the influence of high power microwaves on TTL/CMOS IC inverters. The TTL/CMOS IC inverters are composed of a LED circuit for visual discernment. A CMOS IC inverter damaged by a high power microwave is observed with power supply current and delay time. When the power supply current was increased 2.14times for normal current at 10 kV/m, the CMOS inverter was broken by latch-up. The CMOS inverter damaged by latch-up returned its original level of functioning, because parasitic impedance inside the chip increased with the elapse of time. Three different types of damage were observed by microscopic analysis: component, onchipwire, and bondwire destruction. Based on the results, TTL/CMOS IC inverters can be applied to database to elucidate the effects of microwaves on electronic equipment.

Analysis of Coupling Effects in Transmission Lines Using the BLT Equation and Numerical Methods

The electromagnetic topology and the BLT equation has been used as useful techniques to analyze coupling effects of huge devices. But in the case of systems including complex parts, applying the BLT equation can be difficult to manifest the complex parts with analytic solutions. To resolve this problem, a numerical method can be used to parts of the whole system in advance. In this paper, a microstrip line filter is analyzed using the BLT equation combined with numerical solutions. Consequently, achieved graphs from the BLT equation show good agreements with graphs obtained using a numerical method only.

Delay Time and Power Supply Current Characteristics of CMOS Inverter Broken by Intentional High Power Microwave

This paper examined delay time and breakdown effects of CMOS inverter by impact of high power microwave. The experiments employed a waveguide and a magnetron to study the supply current characteristics of CMOS inverter broken by high power microwave. The CMOS inverters were composed of a LED circuit for visual discernment. Also CMOS inverters broken by high power microwave were observed with supply current and delay time. When power supply current increased 2.14 times for normal current at the 10 kV/m, the CMOS inverter was broken by Latch-up. Also the CMOS inverter broken by Latch-up returned to function of original condition because parasitic impedance inside chip was increased with time. Based on the result, CMOS devices were applied to the data which understood microwave effects of electronic equipment.

Surface Properties and Adhesion of Semiconducting and Insulating Silicone Rubber by Corona Discharge Treatment

In this work, the effects of the corona treatment on surface properties of semiconducting silicone rubber were investigated in terms of contact angles, ATR-FTIR(Attenuated total reflection fourier transform infrared spectroscopy) and XPS(X-ray photoelectron spectroscopy). And the adhesive characteristics were studied by measuring the T-peel strengths. Based on chemical analysis, the surface modification can be mainly ascribed to the creation of chemically active functional groups such as C-O, C

Design of an Impulse Radiating Antenna Using a Curved TEM-Wire Fed Parabola

A design procedure for a TEM-wire fed parabolic antenna is given for impulse radiation, which is suitable for low cost fabrication. A simple wire-type TEM horn and a parabolic reflector are used to achieve ultra-wide bandwidth and high directivity at the same time. Equations for parametric curves of a TEM-wire horn are presented and are used to investigate the relation among their shapes, bandwidth, and directivity. It is also found that wire separation near the focal point limits the high frequency directivity.

Damage Effect and Delay Time of CMOS Integrated Circuits Device with Coupling Caused by High Power Microwave

This paper examines the damage effect and delay time of CMOS integrated circuits device with coupling caused by high power microwaves. The waveguide and magnetron was employed to study the influence of high power micro-waves on CMOS inverters. The CMOS inverters were composed of a LED circuit for visual discernment. Also CMOS inverters broken by high power microwave is observed with supply current and delay time. When the power supply current was increased 2.14 times for normal current at 9.9 kV/m, the CMOS inverter was broken by latch-up. Three different types of damage were observed by microscopic analysis: component, onchipwire, and bondwire destruction. Based on the results, CMOS inverters can be applied to database to elucidate the effects of microwaves on electronic equipment.

Malfunction and Destruction Analysis of CMOS IC by Intentional High Power Microwave

We investigated the malfunction and destruction characteristics of the CMOS AND-and NAND-devices that manufactured the respective three different technologies under high power microwave (HPM) impact by magnetron. HPM was rated at a microwave output of 0 to 1,000 W, at a frequency of 2.45 GHz and was extracted into a standard rectangular waveguide (WR-340). Different CMOS AND-and NAND devices were located into the waveguide respectively. CMOS AND-and NAND-devices were damaged two types. One is malfunction which means no physical damage is done to the system and after a reset the system is going back into function. The other is destruction which means a physical damage of the system so that the system will not recover without a hardware repair. Destructed CMOS NAND devices were removed their surface and a chip conditions were analyzed by SEM. The SEM analysis of the damaged devices showed onchipwire destruction like melting due to thermal effect. The tested results expect to be applied to the fundamental data which interprets the combination mechanism of the semiconductors from artificial microwave environment.

Adhesion and Electrical Performance by Plasma Treatment of Semiconductive Silicone Rubber

In this paper, the effect of adhesion properties of semiconductive-insulating interface layer of silicone rubber on electrical properties was investigated. The modifications produced on the silicone surface by oxygen plasma were accessed using ATR-FTIR, contact angle and Surface Roughness Tester. Adhesion was obtained from T-peel tests of semiconductive layer haying different treatment durations. In addition, ac breakdown test was carried out for elucidating the change of electrical property with duration of plasma treatment. From the results, the treatment in the oxygen plasma produced a noticeable increase in surface energy, which can be mainly ascribed to the creation of O-H and C

Investigation of Surface Degradation in Silicone Rubber Due to Corona Exposure

In this paper we investigated the characteristics of surface degradation in silicone rubber due to corona exposure and recovery mechanism. It was shown that surface free energy was 22.42 mJ/ on initial sample but surface free energy was approximately increased to 71.14 mJ/ after 45 minutes. However, surface free energy on silicone rubber after corona discharge treatment was completely recovered within a short time due to diffusion of low molecular weight(LMW) silicone fluid. It was shown that corona discharge insured the increase of diffusible LMW chains, which could lead to recover the surface hydrophobicity. 200～370 g/mol distribution of LMW silicone fluid which was extracted by solvent-extraction with gel permeation chromatography (GPC) was contributed to recovery. The surface degradation characteristics on silicone rubbers and the recovery mechanism based on our results were discussed.