Joona-Pekko Kakko

Aluminum-Induced Photoluminescence Red Shifts in Core–Shell GaAs/AlxGa1–xAs Nanowires

We report a new phenomenon related to Al-induced carrier confinement at the interface in core-shell GaAs/Al(x)Ga(1-x)As nanowires grown using metal-organic vapor phase epitaxy with Au as catalyst. All Al(x)Ga(1-x)As shells strongly passivated the GaAs nanowires, but surprisingly the peak photoluminescence (PL) position and the intensity from the core were found to be a strong function of Al composition in the shell at low temperatures. Large and systematic red shifts of up to ~66 nm and broadening in the PL emission from the GaAs core were observed when the Al composition in the shell exceeded 3%. On the contrary, the phenomenon was observed to be considerably weaker at the room temperature. Cross-sectional transmission electron microscopy reveals Al segregation in the shell along six Al-rich radial bands displaying a 3-fold symmetry. Time-resolved PL measurements suggest the presence of indirect electron-hole transitions at the interface at higher Al composition. We discuss all possibilities including a simple shell-core-shell model using simulations where the density of interface traps increases with the Al content, thus creating a strong local electron confinement. The carrier confinement at the interface is most likely related to Al inhomogeneity and/or Al-induced traps. Our results suggest that a low Al composition in the shell is desirable in order to achieve ideal passivation in GaAs nanowires.

Strong surface passivation of GaAs nanowires with ultrathin InP and GaP capping layers

We demonstrate efficient surface passivation of GaAs nanowires using ultrathin in-situ grown epitaxial InP and GaP capping layers, with metallo-organic vapor phase epitaxy as the growth system. The passivation increased photoluminescence intensity by three orders of magnitude compared to unpassivated nanowires, and the effect remained strong after a month of storage in air. Effective passivation was acquired over a wide range of growth temperatures, although the highest studied temperatures caused additional detrimental effects such as etching and GaAsP formation. The capping layer thickness was in the order of few monolayers. Therefore, the impact on any other properties of the nanowires besides the surface states was minuscule. As a simple and effective method the studied capping layers offer an excellent way for nanowire passivation.

Direct observation of confined acoustic phonon polarization branches in free-standing semiconductor nanowires

Similar to electron waves, the phonon states in semiconductors can undergo changes induced by external boundaries. However, despite strong scientific and practical importance, conclusive experimental evidence of confined acoustic phonon polarization branches in individual free-standing nanostructures is lacking. Here we report results of Brillouin—Mandelstam light scattering spectroscopy, which reveal multiple (up to ten) confined acoustic phonon polarization branches in GaAs nanowires with a diameter as large as 128 nm, at a length scale that exceeds the grey phonon mean-free path in this material by almost an order-of-magnitude. The dispersion modification and energy scaling with diameter in individual nanowires are in excellent agreement with theory. The phonon confinement effects result in a decrease in the phonon group velocity along the nanowire axis and changes in the phonon density of states. The obtained results can lead to more efficient nanoscale control of acoustic phonons, with benefits for nanoelectronic, thermoelectric and spintronic devices.

Protective capping and surface passivation of III-V nanowires by atomic layer deposition

Low temperature (similar to 200 degrees C) grown atomic layer deposition (ALD) films of AlN, TiN, Al2O3, GaN, and TiO2 were tested for protective capping and surface passivation of bottom-up grown ...

Generation of terahertz radiation in ordered arrays of GaAs nanowires

THz generation under excitation by ultrashort optical pulses in ordered arrays of GaAs nanowires is reported. It was found that the efficiency of THz radiation generation increases due to the resonant leaky mode excitation in nanowires. The maximum value of the THz field is achieved when the distance between the nanowires is of the order of the wavelength of exciting light.

Fabrication of Dual-Type Nanowire Arrays on a Single Substrate

A novel method for fabricating dual-type nanowire (NW) arrays is presented. Two growth steps, selective-area epitaxy (SAE) in the first step and vapor-liquid-solid (VLS) in the second step, are used to grow two types of NWs on the same GaAs substrate. Different precursors can be used for the growth steps, resulting in sophisticated compositional control, as demonstrated for side-by-side grown GaAs and InP NWs. It was found that parasitic growth occurs on the NWs already present on the substrate during the second growth step and that the SAE NWs shadow the growth of the VLS NWs. Optical reflectance measurements revealed the dual-type array having improved light trapping properties compared to single-type arrays. Dual-type NW arrays could be practical for thermoelectric generation, photovoltaics and sensing where composition control of side-by-side NWs and complex configurations are beneficial.

Nonlinear imaging of nanostructures using beams with binary phase modulation

We demonstrate nonlinear microscopy of oriented nanowires using excitation beams with binary phase modulation. A simple and intuitive optical scheme comprising a spatial light modulator gives us the possibility to control the phase across an incident Hermite-Gaussian beam of order (1,0) (HG10 mode). This technique allows us to gradually vary the spatial distribution of the longitudinal electric fields in the focal volume, as demonstrated by second-harmonic generation from vertically-aligned GaAs nanowires. These results open new opportunities for the full control of polarization in the focal volume to enhance light interaction with nanostructured materials.

Nonlinear microscopy using cylindrical vector beams: Applications to three-dimensional imaging of nanostructures

The three-dimensional (3D) optical fields that arise from the focusing of cylindrical vector beams (CVB) with radial and azimuthal polarizations provide new sources of contrast for optical microscopy of nano-objects. So far, these demonstrations have been restricted to two-dimensional transversal scanning, i.e., along the focal plane of interest, or use of point-like objects, i.e., single molecules and nanoparticles. Here, we demonstrate the first application of CVBs for 3D imaging of 3D nano-objects. This technique is done by acquiring 3D image scans of the second-harmonic generation signal from vertically-aligned semiconductor nanowires, whose second-order response is primarily driven by the longitudinal electric field, i.e., the field component along the nanowire axis. Our technique provides a new way to study individual nano-objects in three dimensions through the unique combination of nonlinear microscopy and CVBs.

GaAs nanowires grown on Al-doped ZnO buffer layer

We report a pathway to grow GaAs nanowires on a variety of substrates using a combination of atomic layer deposition and metallo-organic vapor phase epitaxy (MOVPE). GaAs nanowires were grown via MOVPE at 430–540 °C on an atomic-layer-deposited Al:ZnO buffer layer. The resulting nanowires were affected only by the properties of the buffer layer, allowing nanowire growth on a number of substrates that withstand ∼400 °C. The growth occurred in two phases: initial in-plane growth and subsequent out-plane growth. The nanowires grown exhibited a strong photoluminescence signal both at room temperature and at 12 K. The 12 K photoluminescence peak was at 1.47 eV, which was attributed to Zn autodoping from the buffer layer. The crystal structure was zincblende plagued with either twin planes or diagonal defect planes, which were related to perturbations in the seed particle during the growth. The used method combines substrates with variable properties to nanowire growth on a transparent and conductive Al:ZnO buf...

Nanowire encapsulation with polymer for electrical isolation and enhanced optical properties

Light management and electrical isolation are essential for the majority of optoelectronic nanowire (NW) devices. Here, we present a cost-effective technique, based on vapor-phase deposition of parylene-C and subsequent annealing, that provides conformal encapsulation, anti-reflective coating, improved optical properties, and electrical insulation for GaAs nanowires. The process presented allows facile encapsulation and insulation that is suitable for any nanowire structure. In particular, the parylene-C encapsulation functions as an efficient antireflection coating for the nanowires, with reflectivity down to <1% in the visible spectrum. Furthermore, the parylene-C coating increases photoluminescence intensity, suggesting improved light guiding to the NWs. Finally, based on this process, a NW LED was fabricated, which showed good diode performance and a clear electroluminescence signal. We believe the process can expand the fabrication possibilities and improve the performance of optoelectronic nanowire devices.